MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD241B/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
•Collector±Emitter Saturation Voltage Ð VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
•Collector±Emitter Sustaining Voltage Ð
VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B
VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C
•High Current Gain Ð Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc
•Compact TO±220 AB Package
MAXIMUM RATINGS
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BD241B |
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BD241C |
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Rating |
Symbol |
BD242B |
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BD242C |
Unit |
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Collector±Emitter Voltage |
VCEO |
80 |
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100 |
Vdc |
Collector±Emitter Voltage |
VCES |
90 |
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115 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
Vdc |
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Collector Current Ð Continuous |
IC |
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3.0 |
Adc |
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Peak |
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5.0 |
Adc |
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Base Current |
IB |
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1.0 |
Adc |
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Total Device Dissipation @ TC = 25_C |
PD |
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40 |
Watts |
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Derate above 25_C |
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0.32 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +150 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
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RθJA |
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62.5 |
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_C/W |
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Thermal Resistance, Junction to Case |
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RθJC |
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3.125 |
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_C/W |
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(WATTS) |
40 |
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30 |
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DISSIPATION |
20 |
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POWER, |
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10 |
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D |
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P |
0 |
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20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0 |
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TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
NPN
BD241B
BD241C*
PNP
BD242B BD242C*
*Motorola Preferred Device
3 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
80, 100 VOLTS
40 WATTS
CASE 221A±06
TO±220AB
Motorola, Inc. 1995
BD241B |
BD241C |
BD242B |
BD242C |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
Symbol |
Min. |
Max. |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage1 |
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V |
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Vdc |
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(IC = 30 mAdc, IB = 0) |
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BD241B, BD242B |
CEO |
80 |
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BD241C, BD242C |
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100 |
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Collector Cutoff Current |
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ICEO |
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0.3 |
mAdc |
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(VCE = 60 Vdc, IB = 0) |
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BD241B, BD241C, BD242B, BD242C |
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Collector Cutoff Current |
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ICES |
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μAdc |
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(VCE = 80 Vdc, VEB = 0) |
BD241B, BD242B |
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200 |
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(VCE = 100 Vdc, VEB = 0) |
BD241C, BD242C |
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200 |
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Emitter Cutoff Current |
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IEBO |
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mAdc |
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(VBE = 5.0 Vdc, IC = 0) |
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1.0 |
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ON CHARACTERISTICS1 |
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DC Current Gain |
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hFE |
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(IC = 1.0 Adc, VCE = 4.0 Vdc) |
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25 |
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(IC = 3.0 Adc, VCE = 4.0 Vdc) |
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10 |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 3.0 Adc, IB = 600 Adc) |
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1.2 |
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Base±Emitter On Voltage |
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VBE(on) |
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Vdc |
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(IC = 3.0 Adc, VCE = 4.0 Vdc) |
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1.8 |
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DYNAMIC CHARACTERISTICS |
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Current Gain ± Bandwidth Product2 |
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fT |
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MHz |
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(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) |
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3.0 |
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Small±Signal Current Gain |
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hfe |
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(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) |
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20 |
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1Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
2fT = |hfe| •ftest.
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TURN-ON PULSE |
VCC |
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APPROX |
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RL |
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+ 11 V |
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Vin |
SCOPE |
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RK |
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Vin 0 |
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Cjd % Ceb |
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VEB(off) |
t1 |
± 4.0 V |
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t3 |
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APPROX |
t1 v 7.0 ns |
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+ 11 V |
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100 t t2 t 500 μs |
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t3 t 15 ns |
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Vin |
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t2 |
DUTY CYCLE [ 2.0% |
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TURN-OFF PULSE |
APPROX ± 9.0 V |
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Figure 2. Switching Time Equivalent Circuit
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2.0 |
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1.0 |
IC/IB = 10 |
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TJ = 25°C |
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0.7 |
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tr @ VCC = 30 V |
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μs) |
0.5 |
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0.3 |
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tr @ VCC = 10 V |
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t, TIME |
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0.1
0.07 td @ VBE(off) = 2.0 V
0.05
0.03
0.02
0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn±On Time
2 |
Motorola Bipolar Power Transistor Device Data |
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