Motorola BC182B, BC182A, BC182, BC184, BC183 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC182/D

Amplifier Transistors

NPN Silicon

						COLLECTOR
						1
				2
			BASE
						3
							EMITTER
MAXIMUM RATINGS
		BC	BC	BC
Rating	Symbol	182	183	184			Unit
Collector± Emitter Voltage	VCEO	50	30	30			Vdc
Collector± Base Voltage	VCBO	60	45	45			Vdc
Emitter± Base Voltage	VEBO		6.0				Vdc
Collector Current Ð Continuous	IC		100				mAdc
Total Device Dissipation @ TA = 25°C	PD		350				mW
Derate above 25°C			2.8				mW/°C
Total Device Dissipation @ TC = 25°C	PD		1.0				Watts
Derate above 25°C			8.0				mW/°C
Operating and Storage Junction	TJ, Tstg	± 55 to +150					°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic	Symbol		Max				Unit
Thermal Resistance, Junction to Ambient	RqJA		357				°C/W
Thermal Resistance, Junction to Case	RqJC		125				°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BC182,A,B

BC183

BC184

1

2 3

CASE 29±04, STYLE 17 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage		V(BR)CEO				V
(IC = 2.0 mA, IB = 0)	BC182		50	Ð	Ð
	BC183		30	Ð	Ð
	BC184		30	Ð	Ð
Collector± Base Breakdown Voltage		V(BR)CBO	60	Ð	Ð	V
(IC = 10 mA, IE = 0)	BC182
	BC183		45	Ð	Ð
	BC184		45	Ð	Ð
Emitter± Base Breakdown Voltage		V(BR)EBO	6.0	Ð	Ð	V
(IE = 100 mA, IC = 0)
Collector Cutoff Current		ICBO				nA
(VCB = 50 V, VBE = 0)	BC182		Ð	0.2	15
(VCB = 30 V, VBE = 0)	BC183		Ð	0.2	15
	BC184		Ð	0.2	15
Emitter±Base Leakage Current		IEBO	Ð	Ð	15	nA
(VEB = 4.0 V, IC = 0)

Motorola, Inc. 1996

BC182,A,B	BC183 BC184
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
	Characteristic		Symbol	Min	Typ	Max	Unit
ON CHARACTERISTICS
DC Current Gain			hFE				Ð
(IC = 10 μA, VCE = 5.0 V)		BC182		40	Ð	Ð
		BC183		40	Ð	Ð
		BC184		100	Ð	Ð
(IC = 2.0 mA, VCE = 5.0 V)		BC182		120	Ð	500
		BC183		120	Ð	800
		BC184		250	Ð	800
(IC = 100 mA, VCE = 5.0 V)		BC182		80	Ð	Ð
		BC183		80	Ð	Ð
		BC184		130	Ð	Ð
Collector± Emitter On Voltage			VCE(sat)				V
(IC = 10 mA, IB = 0.5 mA)				Ð	0.07	0.25
(I = 100 mA, I = 5.0 mA)(1)				Ð	0.2	0.6
C	B
Base ± Emitter Saturation Voltage			VBE(sat)	Ð	Ð	1.2	V
(IC = 100 mA, IB = 5.0 mA)(1)
Base±Emitter On Voltage			VBE(on)				V
(IC = 100 μA, VCE = 5.0 V)				Ð	0.5	Ð
(IC = 2.0 mA, VCE = 5.0 V)				0.55	0.62	0.7
(IC = 100 mA, VCE = 5.0 V)(1)				Ð	0.83	Ð
DYNAMIC CHARACTERISTICS
Current± Gain Ð Bandwidth Product			fT				MHz
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)		BC182		Ð	100	Ð
		BC183		Ð	120	Ð
		BC184		Ð	140	Ð
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)		BC182		150	200	Ð
		BC183		150	240	Ð
		BC184		150	280	Ð
Common Base Output Capacitance			Cob	Ð	Ð	5.0	pF
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Common Base Input Capacitance			Cib	Ð	8.0	Ð	pF
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Small±Signal Current Gain			hfe				Ð
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)		BC182		125	Ð	500
		BC183		125	Ð	900
		BC184		240	Ð	900
		BC182A		125	Ð	260
		BC182B		240	Ð	500
Noise Figure			NF				dB
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz)
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,		BC184		Ð	2.0	4.0
f = 1.0 kHz, f = 200 Hz)		BC182		Ð	2.0	10
		BC183		Ð	2.0	10
		BC184		Ð	2.0	4.0

1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data