Motorola BCW60DLT1, BCW60BLT1, BCW60ALT1 Datasheet

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BCW60ALT1/D

General Purpose Transistors

NPN Silicon

			COLLECTOR
			3
		1


		BASE


			2
			EMITTER
MAXIMUM RATINGS

Rating	Symbol	Value		Unit

Collector± Emitter Voltage	VCEO	32		Vdc
Collector± Base Voltage	VCBO	32		Vdc
Emitter± Base Voltage	VEBO	5.0		Vdc
Collector Current Ð Continuous	IC	100		mAdc
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max		Unit

Total Device Dissipation FR±5 Board(1)	P	225		mW
TA = 25°C	D
TA = 25°C				mW/°C
Derate above 25°C		1.8		mW/°C

Thermal Resistance Junction to Ambient	RqJA	556		°C/W
Total Device Dissipation	PD	300		mW
Alumina Substrate,(2) T = 25°C
A
Derate above 25°C		2.4		mW/°C

Thermal Resistance Junction to Ambient	RqJA	417		°C/W
Junction and Storage Temperature	TJ, Tstg	± 55 to +150		°C

DEVICE MARKING

BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BCW60ALT1

BCW60BLT1

BCW60DLT1

CASE 318 ± 08, STYLE 6 SOT± 23 (TO ± 236AB)

	Characteristic	Symbol	Min	Max	Unit

OFF CHARACTERISTICS

	Collector± Emitter Breakdown Voltage	V(BR)CEO	32	Ð	Vdc
	(IC = 2.0 mAdc, IE = 0)
	Emitter± Base Breakdown Voltage	V(BR)EBO	5.0	Ð	Vdc
	(IE = 1.0 mAdc, IC = 0)
	Collector Cutoff Current	ICES
	(VCE = 32 Vdc)		Ð	20	nAdc
	(VCE = 32 Vdc, TA = 150°C)		Ð	20	μAdc
	Emitter Cutoff Current	IEBO			nAdc
	(VEB = 4.0 Vdc, IC = 0)		Ð	20
1.	FR± 5 = 1.0 0.75 0.062 in.
2.	Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company

Motorola, Inc. 1996

BCW60ALT1 BCW60BLT1 BCW60DLT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic	Symbol	Min	Max	Unit

ON CHARACTERISTICS

DC Current Gain		hFE			Ð
(IC = 10 μAdc, VCE = 5.0 Vdc)	BCW60A		20	Ð
	BCW60B		30	Ð
	BCW60D		100	Ð
(IC = 2.0 mAdc, VCE = 5.0 Vdc)	BCW60A		120	220
	BCW60B		175	310
	BCW60D		380	630
(IC = 50 mAdc, VCE = 1.0 Vdc)	BCW60A		60	Ð
	BCW60B		70	Ð
	BCW60D		100	Ð

AC Current Gain		hfe			Ð
(VCE = 5.0 Vdc, IC = 2.0 mAdc, f = 1.0 kHz)	BCW60A		125	250
	BCW60B		175	350
	BCW60D		350	700

Collector± Emitter Saturation Voltage		VCE(sat)			Vdc
(IC = 50 mAdc, IB = 1.25 mAdc)			Ð	0.55
(IC = 10 mAdc, IB = 0.25 mAdc)			Ð	0.35
Base ± Emitter Saturation Voltage		VBE(sat)			Vdc
(IC = 50 mAdc, IB = 1.25 mAdc)			0.7	1.05
(IC = 50 mAdc, IB = 0.25 mAdc)			0.6	0.85
Base ± Emitter On Voltage		VBE(on)			Vdc
(IC = 2.0 mAdc, VCE = 5.0 Vdc)			0.6	0.75
SMALL± SIGNAL CHARACTERISTICS

Current± Gain Ð Bandwidth Product		fT			MHz
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)			125	Ð
Output Capacitance		Cobo			pF
(VCE = 10 Vdc, IC = 0, f = 1.0 MHz)			Ð	4.5
Noise Figure		NF			dB
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)			Ð	6.0
SWITCHING CHARACTERISTICS

Turn±On Time		ton			ns
(IC = 10 mAdc, IB1 = 1.0 mAdc)			Ð	150
Turn±Off Time		toff			ns
(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990 Ω)			Ð	800

EQUIVALENT SWITCHING TIME TEST CIRCUITS

		+ 3.0 V	10 < t1 < 500 μs	t1
300 ns	+10.9 V	275	10 < t1 < 500 μs	t1	+10.9 V
300 ns			DUTY CYCLE = 2%
DUTY CYCLE = 2%			DUTY CYCLE = 2%
DUTY CYCLE = 2%		10 k
		10 k	0
± 0.5 V			0
± 0.5 V
<1.0 ns		CS < 4.0 pF*
			± 9.1 V		< 1.0 ns
					< 1.0 ns

+ 3.0 V

275

10 k

CS < 4.0 pF*

1N916

*Total shunt capacitance of test jig and connectors

Figure 1. Turn±On Time

Figure 2. Turn±Off Time

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

Motorola BCW60DLT1, BCW60BLT1, BCW60ALT1 Datasheet

BCW60ALT1 BCW60BLT1 BCW60DLT1

TYPICAL NOISE CHARACTERISTICS

										(VCE = 5.0 Vdc, TA = 25°C)
	20												100
	IC = 1.0 mA							BANDWIDTH = 1.0 Hz					50						BANDWIDTH = 1.0 Hz
									RS = 0				50	IC = 1.0 mA						RS ≈ ∞
									RS = 0					IC = 1.0 mA						RS ≈ ∞
(nV)		300		μ	A							(pA)	20				300 μA
	10	300			A												300 μA
													10						100 μA
,NOISE VOLTAGE												NOISE CURRENT

	7.0	100	μ										5.0
		100	A
	5.0												2.0
	5.0
													1.0
n												,
n												n
e	10	μA										I	0.5		30 μA
	10	μA
	3.0	30 μA
	3.0	30 μA											0.2					10 μA
													0.2					10 μA
	2.0												0.1
	10	20	50		100	200	500	1 k	2 k	5 k	10 k		10	20	50	100	200	500	1 k	2 k	5 k	10 k
					f, FREQUENCY (Hz)											f, FREQUENCY (Hz)

Figure 3. Noise Voltage

Figure 4. Noise Current

NOISE FIGURE CONTOURS

(VCE = 5.0 Vdc, TA = 25°C)

500 k

1 M

(OHMS)

200 k

BANDWIDTH = 1.0 Hz

(OHMS)

500 k

BANDWIDTH = 1.0 Hz

100 k

200 k

50 k

100 k

RESISTANCE

20 k

RESISTANCE

50 k

10 k

20 k

5 k

2.0 dB

10 k

1.0 dB

2 k

5 k

SOURCE

3.0 dB

4.0 dB

SOURCE

2.0 dB

1 k

2 k

6.0 dB

10 dB

3.0 dB

500

1 k

5.0 dB

200

500

100

200

8.0 dB

100

50 70

100

200 300

500 700

1 k

100

200 300

500 700

1 k

IC, COLLECTOR CURRENT (μA)

Figure 5. Narrow Band, 100 Hz

Figure 6. Narrow Band, 1.0 kHz

	500 k							10 Hz to 15.7 kHz
	200 k							10 Hz to 15.7 kHz
(OHMS)	200 k
	100 k
	50 k
RESISTANCE	20 k
	10 k
	5 k				1.0 dB
	2 k
SOURCE	2 k							2.0 dB
	1 k									3.0 dB
	500							5.0 dB
,
S	200
R	200							8.0 dB
	100							8.0 dB
	100
	50	20	30	50	70	100	200	300	500	700	1 k
	10	20	30	50	70	100	200	300	500	700	1 k
				IC, COLLECTOR CURRENT (μA)

Figure 7. Wideband

Noise Figure is defined as:

	NF + 20 log10	en2 ) 4KTRS ) In 2RS2 1 2
		4KTRS

en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10±23 j/°K)

T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)

Motorola Small±Signal Transistors, FETs and Diodes Device Data

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