MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAV99WT1/D
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BAV99WT1 |
SC-70/SOT-323 Dual Series |
BAV99RWT1 |
Switching Diode |
Motorola Preferred Devices |
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The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Suggested Applications
• ESD Protection
• Polarity Reversal Protection
• Data Line Protection
• Inductive Load Protection
• Steering Logic
MAXIMUM RATINGS (EACH DIODE)
Rating |
Symbol |
Value |
Unit |
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Reverse Voltage |
VR |
70 |
Vdc |
Forward Current |
IF |
215 |
mAdc |
Peak Forward Surge Current |
IFM(surge) |
500 |
mAdc |
Repetitive Peak Reverse Voltage |
VRRM |
70 |
V |
Average Rectified Forward Current(1) |
IF(AV) |
715 |
mA |
(averaged over any 20 ms period) |
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Repetitive Peak Forward Current |
IFRM |
450 |
mA |
Non±Repetitive Peak Forward Current |
IFSM |
2.0 |
A |
t = 1.0 ms |
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t = 1.0 ms |
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1.0 |
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t = 1.0 S |
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0.5 |
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THERMAL CHARACTERISTICS
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3 |
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1 |
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2 |
ANODE |
CATHODE |
1 |
2 |
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3 |
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CATHODE/ANODE |
BAV99WT1
CASE 419±02, STYLE 9
SC±70/SOT±323
CATHODE |
ANODE |
1 |
2 |
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3 |
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CATHODE/ANODE |
BAV99RWT1
CASE 419±02, STYLE 10
SC±70/SOT±323
Characteristic |
Symbol |
Max |
Unit |
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Total Device Dissipation |
PD |
200 |
mW |
FR±5 Board,(1) T = 25°C |
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A |
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Derate above 25°C |
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1.6 |
mW/°C |
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Thermal Resistance Junction to Ambient |
RqJA |
625 |
°C/W |
Total Device Dissipation |
PD |
300 |
mW |
Alumina Substrate,(2) T = 25°C |
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A |
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Derate above 25°C |
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2.4 |
mW/°C |
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Thermal Resistance Junction to Ambient |
RqJA |
417 |
°C/W |
Junction and Storage Temperature |
TJ, Tstg |
± 65 to +150 |
°C |
1.FR±5 = 1.0 0.75 0.062 in.
2.Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
DEVICE MARKING
BAV99WT1 = A7
BAV99RWT1 = F7
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
BAV99WT1 |
BAV99RWT1 |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) |
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Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Reverse Breakdown Voltage (I(BR) = 100 μA) |
V(BR) |
70 |
Ð |
Vdc |
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Reverse Voltage Leakage Current (VR = 70 Vdc) |
IR |
Ð |
2.5 |
mAdc |
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(VR = 25 Vdc, TJ = 150°C) |
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Ð |
30 |
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(VR = 70 Vdc, TJ = 150°C) |
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Ð |
50 |
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Diode Capacitance |
CD |
Ð |
1.5 |
pF |
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(VR = 0, f = 1.0 MHz) |
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Forward Voltage |
(IF = 1.0 mAdc) |
VF |
Ð |
715 |
mVdc |
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(IF = 10 mAdc) |
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Ð |
855 |
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(IF = 50 mAdc) |
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Ð |
1000 |
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(IF = 150 mAdc) |
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Ð |
1250 |
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Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W |
trr |
Ð |
6.0 |
ns |
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Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) |
VFR |
Ð |
1.75 |
V |
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820 Ω |
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+10 V |
2 k |
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0.1 μF |
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IF |
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tr |
tp |
t |
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100 |
μ |
H |
IF |
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0.1 μF |
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10% |
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trr |
t |
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DUT |
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50 Ω OUTPUT |
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50 Ω INPUT |
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90% |
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iR(REC) = 1 mA |
PULSE |
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SAMPLING |
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IR |
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GENERATOR |
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OSCILLOSCOPE |
VR |
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INPUT SIGNAL |
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OUTPUT PULSE |
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(IF = IR = 10 mA; measured |
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at iR(REC) = 1 mA) |
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Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. |
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Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. |
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Notes: 3. tp » t rr |
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Figure 1. Recovery Time Equivalent Test Circuit
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Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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