Motorola BD440, BD438, BD442 Datasheet

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Motorola BD440, BD438, BD442 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BD438/D

 

 

BD438

Plastic Medium Power

Silicon

BD440

BD442

PNP Transistor

 

 

 

. . . for amplifier and switching applications. Complementary types are BD437 and

 

 

 

BD441.

 

4.0 AMPERES

 

 

POWER TRANSISTORS

 

 

PNP SILICON

 

 

 

 

 

 

 

CASE 77±08

 

 

 

 

 

TO±225AA TYPE

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rating

 

Symbol

 

Value

 

Unit

 

 

 

 

 

 

 

Collector±Emitter Voltage

BD438

VCEO

45

 

Vdc

 

BD440

 

60

 

 

 

BD442

 

80

 

 

 

 

 

 

 

 

 

Collector±Base Voltage

BD438

VCBO

45

 

Vdc

 

BD440

 

60

 

 

 

BD442

 

80

 

 

 

 

 

 

 

 

 

Emitter±Base Voltage

 

VEBO

5.0

 

Vdc

Collector Current

 

IC

4.0

 

Adc

Base Current

 

IB

1.0

 

Adc

Total Device Dissipation @ TC = 25_C

 

PD

36

 

Watts

Derate above 25_C

 

 

288

 

W/_C

 

 

 

 

 

 

Operating and Storage Junction Temperature Range

TJ, Tstg

± 55 to +150

 

_C

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

 

Max

 

Unit

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

θJC

3.5

 

_C/W

REV 7

Motorola, Inc. 1995

BD438

BD440

BD442

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

 

Collector±Emitter Breakdown Voltage

 

V(BR)CEO

 

 

 

Vdc

 

(IC = 100 mA, IB = 0)

BD438

 

45

Ð

Ð

 

 

 

 

 

BD440

 

60

Ð

Ð

 

 

 

 

 

BD442

 

80

Ð

Ð

 

 

 

 

 

 

 

 

 

 

Collector±Base Breakdown Voltage

 

V(BR)CBO

 

 

 

Vdc

 

(IC = 100 μA, IB = 0)

BD438

 

45

Ð

Ð

 

 

 

 

 

BD440

 

60

Ð

Ð

 

 

 

 

 

BD442

 

80

Ð

Ð

 

 

 

 

 

 

 

 

 

 

Emitter±Base Breakdown Voltage

 

V(BR)EBO

5.0

Ð

Ð

Vdc

 

(IE = 100 μA, IC = 0)

 

 

 

 

 

 

 

Collector Cutoff Current

 

ICBO

 

 

 

mAdc

 

(VCB = 45 V, IE = 0)

 

BD438

 

Ð

Ð

0.1

 

 

(VCB = 60 V, IE = 0)

 

BD440

 

Ð

Ð

0.1

 

 

(VCB = 80 V, IE = 0)

 

BD442

 

Ð

Ð

0.1

 

 

Emitter Cutoff Current

 

 

IEBO

Ð

Ð

1.0

mAdc

 

(VEB = 5.0 V)

 

 

 

 

 

 

 

 

DC Current Gain

 

 

hFE

 

 

 

 

 

(IC = 10 mA, VCE = 5.0 V)

BD438

 

30

Ð

Ð

 

 

 

 

 

BD440

 

20

Ð

Ð

 

 

 

 

 

BD442

 

15

Ð

Ð

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

 

hFE

 

 

 

 

 

(IC = 500 mA, VCE = 1.0 V)

BD438

 

85

Ð

375

 

 

 

 

 

BD440

 

40

Ð

475

 

 

 

 

 

BD442

 

40

Ð

475

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

 

hFE

 

 

 

 

 

(IC = 2.0 A, VCE = 1.0 V)

BD438

 

40

Ð

Ð

 

 

 

 

 

BD440

 

25

Ð

Ð

 

 

 

 

 

BD442

 

15

Ð

Ð

 

 

 

 

 

 

 

 

 

 

Collector Saturation Voltage

 

VCE(sat)

 

 

 

Vdc

 

(IC = 3.0 A, IB = 0.3 A)

BD438

 

Ð

Ð

0.7

 

 

 

 

 

BD440

 

Ð

Ð

0.8

 

 

 

 

 

BD442

 

Ð

Ð

0.8

 

 

 

 

 

 

 

 

 

 

Base±Emitter On Voltage

BD438

VBE(ON)

Ð

Ð

1.1

Vdc

 

(IC = 2.0 A, VCE = 1.0 V)

BD440/442

 

Ð

Ð

1.5

 

 

Current±Gain Ð Bandwidth Product

 

fT

3.0

Ð

Ð

MHz

 

(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz)

 

 

 

 

 

 

2

Motorola Bipolar Power Transistor Device Data

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