MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC559/D
Low Noise Transistors
PNP Silicon
COLLECTOR 1
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating |
Symbol |
BC559 |
|
BC560 |
Unit |
|
|
|
|
|
|
Collector± Emitter Voltage |
VCEO |
±30 |
|
±45 |
Vdc |
Collector± Base Voltage |
VCBO |
±30 |
|
±50 |
Vdc |
Emitter± Base Voltage |
VEBO |
±5.0 |
Vdc |
||
Collector Current Ð Continuous |
IC |
±100 |
mAdc |
||
Total Device Dissipation @ TA = 25°C |
PD |
625 |
mW |
||
Derate above 25°C |
|
|
5.0 |
mW/°C |
|
|
|
|
|
|
|
Total Device Dissipation @ TC = 25°C |
PD |
|
1.5 |
Watt |
|
Derate above 25°C |
|
|
12 |
mW/°C |
|
|
|
|
|
||
Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
°C |
||
Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction to Ambient |
RqJA |
200 |
°C/W |
Thermal Resistance, Junction to Case |
RqJC |
83.3 |
°C/W |
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
BC559, B,
BC560C
1
2 3
CASE 29±04, STYLE 17 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage |
|
V(BR)CEO |
|
|
|
Vdc |
(IC = ±10 mAdc, IB = 0) |
BC559 |
|
±30 |
Ð |
Ð |
|
|
BC560 |
|
±45 |
Ð |
Ð |
|
|
|
|
|
|
|
|
Collector± Base Breakdown Voltage |
|
V(BR)CBO |
|
|
|
Vdc |
(IC = ±10 μAdc, IE = 0) |
BC559 |
|
±30 |
Ð |
Ð |
|
|
BC560 |
|
±50 |
Ð |
Ð |
|
|
|
|
|
|
|
|
Emitter± Base Breakdown Voltage |
|
V(BR)EBO |
±5.0 |
Ð |
Ð |
Vdc |
(IE = ±10 mAdc, IC = 0) |
|
|
|
|
|
|
Collector Cutoff Current |
|
ICBO |
|
|
|
|
(VCB = ±30 Vdc, IE = 0) |
|
|
Ð |
Ð |
±15 |
nAdc |
(VCB = ±30 Vdc, IE = 0, TA = +125°C) |
|
|
Ð |
Ð |
±5.0 |
μAdc |
Emitter Cutoff Current |
|
IEBO |
Ð |
Ð |
±15 |
nAdc |
(VEB = ±4.0 Vdc, IC = 0) |
|
|
|
|
|
|
REV 1
Motorola, Inc. 1996
BC559, B, C BC560C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
ON CHARACTERISTICS
DC Current Gain |
|
hFE |
|
|
|
Ð |
(IC = ±10 μAdc, VCE = ±5.0 Vdc) |
BC559B |
|
100 |
150 |
Ð |
|
|
BC559C/560C |
|
100 |
270 |
Ð |
|
(IC = ±2.0 mAdc, VCE = ±5.0 Vdc) |
BC559B |
|
180 |
290 |
460 |
|
|
BC559C/560C |
|
380 |
500 |
800 |
|
|
BC559 |
|
120 |
Ð |
800 |
|
|
|
|
|
|
|
|
Collector± Emitter Saturation Voltage |
|
VCE(sat) |
|
|
|
Vdc |
(IC = ±10 mAdc, IB = ±0.5 mAdc) |
|
|
Ð |
±0.075 |
±0.25 |
|
(IC = ±10 mAdc, IB = see note 1) |
|
|
Ð |
±0.3 |
±0.6 |
|
(IC = ±100 mAdc, IB = ±5.0 mAdc, see note 2) |
|
|
Ð |
±0.25 |
Ð |
|
Base±Emitter Saturation Voltage |
|
VBE(sat) |
Ð |
±1.1 |
Ð |
Vdc |
(IC = ±100 mAdc, IB = ±5.0 mAdc) |
|
|
|
|
|
|
Base±Emitter On Voltage |
|
VBE(on) |
|
|
|
Vdc |
(IC = ±10 μAdc, VCE = ±5.0 Vdc) |
|
|
Ð |
±0.52 |
Ð |
|
(IC = ±100 μAdc, VCE = ±5.0 Vdc) |
|
|
Ð |
±0.55 |
Ð |
|
(IC = ±2.0 mAdc, VCE = ±5.0 Vdc) |
|
|
±0.55 |
±0.62 |
±0.7 |
|
SMALL±SIGNAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
Current± Gain Ð Bandwidth Product |
|
fT |
Ð |
250 |
Ð |
MHz |
(IC = ±10 mAdc, VCE = ±5.0 Vdc, f = 100 MHz) |
|
|
|
|
|
|
Collector±Base Capacitance |
|
Ccbo |
Ð |
2.5 |
Ð |
pF |
(VCB = ±10 Vdc, IE = 0, f = 1.0 MHz) |
|
|
|
|
|
|
Small±Signal Current Gain |
|
hfe |
|
|
|
Ð |
(IC = ±2.0 mAdc, VCE = ±5.0 V, f = 1.0 kHz) |
BC559B |
|
240 |
330 |
500 |
|
|
BC559C/BC560C |
|
450 |
600 |
900 |
|
|
|
|
|
|
|
|
Noise Figure |
|
|
|
|
|
dB |
(IC = ±200 μAdc, VCE = ±5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) |
NF1 |
Ð |
0.5 |
2.0 |
|
|
(IC = ±200 μAdc, VCE = ±5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz, f = 200 kHz) |
NF2 |
Ð |
Ð |
10 |
|
NOTES:
1.IB is value for which IC = ±11 mA at VCE = ±1.0 V.
2.Pulse test = 300 μs ± Duty cycle = 2%.
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |