MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BDX53B/D
Plastic Medium-Power
Complementary Silicon
Transistors
. . . designed for general±purpose amplifier and low±speed switching applications.
• High DC Current Gain Ð
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustaining Voltage Ð @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) Ð BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) Ð BDX53C, 54C
• Low Collector±Emitter Saturation Voltage Ð
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
•Monolithic Construction with Built±In Base±Emitter Shunt Resistors
•TO±220AB Compact Package
MAXIMUM RATINGS
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BDX53B |
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BDX53C |
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Rating |
Symbol |
BDX54B |
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BDX54C |
Unit |
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Collector±Emitter Voltage |
VCEO |
80 |
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100 |
Vdc |
Collector±Base Voltage |
VCB |
80 |
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100 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
Vdc |
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Collector Current Ð Continuous |
IC |
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8.0 |
Adc |
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Peak |
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12 |
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Base Current |
IB |
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0.2 |
Adc |
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Total Device Dissipation @ TC = 25_C |
PD |
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60 |
Watts |
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Derate above 25_C |
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0.48 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +150 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Ambient |
RθJA |
70 |
_C/W |
Thermal Resistance, Junction to Case |
RθJC |
70 |
_C/W |
NPN
BDX53B
BDX53C
PNP
BDX54B
BDX54C
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 ± 100 VOLTS
65 WATTS
CASE 221A±06
TO±220AB
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TA |
TC |
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4.0 |
80 |
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(WATTS) |
3.0 |
60 |
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DISSIPATION |
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TC |
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2.0 |
40 |
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POWER |
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TA |
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1.0 |
20 |
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, |
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D |
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P |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0 |
T, TEMPERATURE (°C)
Figure 1. Power Derating
REV 7
Motorola, Inc. 1995
BDX53B BDX53C BDX54B |
BDX54C |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Ð |
Vdc |
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(IC = 100 mAdc, IB = 0) |
BDX53B, BDX54B |
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80 |
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BDX53C, BDX54C |
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100 |
Ð |
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Collector Cutoff Current |
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ICEO |
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mAdc |
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(VCE = 40 Vdc, IB = 0) |
BDX53B, BDX54B |
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Ð |
0.5 |
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(VCE = 50 Vdc, IB = 0) |
BDX53C, BDX54C |
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Ð |
0.5 |
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Collector Cutoff Current |
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ICBO |
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mAdc |
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(VCB = 80 Vdc, IE = 0) |
BDX53B, BDX54B |
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Ð |
0.2 |
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(VCB = 100 Vdc, IE = 0) |
BDX53C, BDX54C |
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Ð |
0.2 |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
750 |
Ð |
Ð |
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(IC = 3.0 Adc, VCE = 3.0 Vdc) |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 3.0 Adc, IB = 12 mAdc) |
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Ð |
2.0 |
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Ð |
4.0 |
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Base±Emitter Saturation Voltage |
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VBE(sat) |
Ð |
2.5 |
Vdc |
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(IC = 3.0 Adc, IC = 12 mA) |
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DYNAMIC CHARACTERISTICS |
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Small±Signal Current Gain |
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hfe |
4.0 |
Ð |
Ð |
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(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) |
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Output Capacitance |
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Cob |
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pF |
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(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
BDX53B, 53C |
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Ð |
300 |
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BDX54B, 54C |
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Ð |
200 |
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(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2%.
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
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± 30 V |
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D1 MUST BE FAST RECOVERY TYPES, e.g.: |
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1N5825 USED ABOVE IB [ 100 mA |
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RC SCOPE |
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MSD6100 USED BELOW IB [ 100 mA |
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TUT |
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V2 |
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RB |
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APPROX |
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+ 8.0 |
V |
51 |
D1 |
[ 8.0 k |
[ 120 |
0 |
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V1 |
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+ 4.0 V |
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APPROX |
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25 μs |
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for td and tr, D1 is disconnected |
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±12 V |
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t , t |
v 10 ns |
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and V2 = 0 |
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r f |
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DUTY CYCLE = 1.0% |
For NPN test circuit reverse all polarities |
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5.0 |
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3.0 |
ts |
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2.0 |
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( μs) |
1.0 |
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tf |
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0.7 |
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t, TIME |
0.5 |
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0.3 |
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tr |
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0.2 |
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VCC = 30 V |
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0.1 |
IC/IB = 250 |
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IB1 = IB2 |
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0.07 |
° |
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td @ VBE(off) = 0 V |
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0.05 |
TJ = 25 C |
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0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 2. Switching Time Test Circuit |
Figure 3. Switching Times |
2 |
Motorola Bipolar Power Transistor Device Data |
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