MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BRX44/D
Silicon Controlled Rectifiers
PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92) package which is readily adaptable for use in automatic insertion equipment.
•Sensitive Gate Trigger Current Ð 200 μA Maximum
•Low Reverse and Forward Blocking Current Ð 100 μA Maximum, TC = 125°C
•Low Holding Current Ð 5 mA Maximum
•Glass-Passivated Surface for Reliability and Uniformity
BRX44* thru BRX47* BRX49*
SCRs
0.8 AMPERE RMS
30 TO 400 VOLTS
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CASE 29-04 |
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(TO-226AA) |
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STYLE 3 |
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WITH TO-18 LEADFORM* |
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) |
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Rating |
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Symbol |
Value |
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Unit |
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Peak Repetitive Forward and Reverse Blocking Voltage |
BRX44 |
VDRM, VRRM |
30 |
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Volts |
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(TJ = 25 to 125°C, RGK = 1000 Ω) |
BRX45 |
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60 |
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BRX46 |
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100 |
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BRX47 |
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200 |
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BRX49 |
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400 |
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Forward Current RMS |
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IT(RMS) |
0.8 |
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Amp |
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(All Conduction Angles) |
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Peak Forward Surge Current, TA = 25°C |
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ITSM |
8 |
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Amps |
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(1/2 Cycle, Sine Wave, 60 Hz) |
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Circuit Fusing Considerations, T = 25°C |
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I2t |
0.15 |
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A2s |
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A |
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(t = 8.3 ms) |
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Peak Gate Power Ð Forward, T A = 25°C |
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PGM |
0.1 |
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Watt |
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Peak Gate Current Forward, TA = 25°C |
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IGFM |
1 |
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Amp |
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(300 μs, 120 PPS) |
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Peak Gate Voltage Ð Reverse |
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VGRM |
5 |
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Volts |
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Operating Junction Temperature Range @ Rated |
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TJ |
±40 to +125 |
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°C |
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VRRM and VDRM |
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Storage Temperature Range |
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Tstg |
±40 to +150 |
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°C |
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Lead Solder Temperature |
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+230 |
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°C |
(t1.5 mm from case, 10 s max.) |
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*European part numbers only . Package is Case 29 with Leadform 18.
1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Motorola, Inc. 1995
BRX44 thru BRX47 BRX49
THERMAL CHARACTERISTICS
Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
75 |
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°C/W |
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Thermal Resistance, Junction to Ambient |
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RθJA |
200 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1000 Ω unless otherwise noted.) |
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Characteristic |
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Symbol |
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Min |
Max |
Unit |
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Peak Forward Blocking Current |
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IDRM |
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Ð |
100 |
μA |
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(VD = Rated VDRM @ TC = 125°C) |
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Peak Reverse Blocking Current |
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IRRM |
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Ð |
100 |
μA |
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(VR = Rated VRRM @ TC = 125°C) |
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(1) |
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VTM |
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Ð |
1.7 |
Volts |
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Forward ªOnº Voltage |
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(ITM = 1 A Peak @ TA = 25°C) |
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Gate Trigger Current (Continuous dc)(2) |
T = 25°C |
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I |
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Ð |
200 |
μA |
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(Anode Voltage = 7 Vdc, RL = 100 Ohms) |
C |
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GT |
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Gate Trigger Voltage (Continuous dc) |
TC = 25°C |
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VGT |
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Ð |
0.8 |
Volts |
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(Anode Voltage = 7 Vdc, RL = 100 Ohms) |
TC = ±40°C |
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Ð |
1.2 |
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(Anode Voltage = Rated VDRM, RL = 100 Ohms) |
TC = 125°C |
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0.1 |
Ð |
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Holding Current |
TC = 25°C |
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IH |
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Ð |
5 |
mA |
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(Anode Voltage = 7 Vdc, initiating current = 20 mA) |
TC = ±40°C |
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Ð |
10 |
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1.Forward current applied for 1 ms maximum duration, duty cycle p 1%.
2.RGK current is not included in measurement.
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
130
120
110
100
90
80
70
60
50
0
FIGURE 1 Ð CURRENT DERATING (REFERENCE: CASE TEMPERATURE)
α
α = CONDUCTION ANGLE
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CASE MEASUREMENT |
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POINT Ð CENTER OF |
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FLAT PORTION |
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dc |
α = 30 |
60 |
90 |
120 |
180 |
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0.1 |
0.2 |
0.3 |
0.4 |
0.5 |
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
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FIGURE 2 Ð CURRENT DERATING |
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(REFERENCE: AMBIENT TEMPERATURE) |
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130 |
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α |
AMBIENT |
C) |
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TYPICAL PRINTED |
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110 |
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α = CONDUCTION ANGLE |
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ALLOWABLEMAXIMUM, |
TEMPERATURE( |
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50 |
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° |
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CIRCUIT BOARD |
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90 |
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MOUNTING |
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70 |
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C |
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α = 30 |
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T |
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30 |
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60 |
90 |
120 |
180 |
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0 |
0.1 |
0.2 |
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0.3 |
0.4 |
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
2 |
Motorola Thyristor Device Data |
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