MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD157/D
Plastic Medium Power NPN
Silicon Transistor
. . . designed for power output stages for television, radio, phonograph and other consumer product applications.
•Suitable for Transformerless, Line±Operated Equipment
•Thermopad{ Construction Provides High Power Dissipation Rating for High Reliability
BD157
BD158
BD159
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 ± 300 ± 350 VOLTS
20 WATTS
MAXIMUM RATINGS
Rating |
Symbol |
BD 157 |
BD 158 |
BD 159 |
Unit |
Collector±Emitter Voltage |
VCEO |
250 |
300 |
350 |
Vdc |
Collector±Base Voltage |
VCB |
275 |
325 |
375 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
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Vdc |
Collector Current Ð Continuous |
IC |
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0.5 |
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Adc |
Peak |
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1.0 |
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Base Current |
IB |
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0.25 |
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Adc |
Total Device Dissipation @ TC = 25_C |
PD |
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20 |
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Watts |
Derate above 25_C |
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0.16 |
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W/_C |
Operating and Storage Junction |
TJ, Tstg |
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± 65 to +150 |
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_C |
Temperature Range |
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THERMAL CHARACTERISTICS |
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CASE 77±08 |
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Characteristic |
Symbol |
Max |
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Unit |
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TO±225AA TYPE |
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Thermal Resistance, Junction to Case |
θJC |
6.25 |
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_C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Type |
Min |
Max |
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Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage |
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BVCEO |
BD 157 |
250 |
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Ð |
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Vdc |
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(IC = 1.0 mAdc, IB = 0) |
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BD 158 |
300 |
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BD 159 |
350 |
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Collector Cutoff Current |
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ICBO |
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Ð |
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100 |
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μAdc |
(At rated voltage) |
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Emitter Cutoff Current |
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IEBO |
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Ð |
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100 |
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μAdc |
(VEB = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
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30 |
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240 |
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(IC = 50 mAdc, VCE = 10 Vdc) |
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REV 7
Motorola, Inc. 1995
BD157 |
BD158 |
BD159 |
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25 |
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(WATTS) |
20 |
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POWER DISSIPATION |
15 |
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10 |
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, |
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D |
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P |
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5.0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power±Temperature Derating Curve
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1.0 |
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(AMPS) |
0.7 |
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10 μs |
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0.5 |
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500 μ |
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0.3 |
TJ = 150°C |
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1.0 ms |
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CURRENT |
dc |
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0.2 |
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0.1 |
BONDING WIRE LIMITED |
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COLLECTOR |
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0.07 |
THERMALLY LIMITED @ TC = 25°C |
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0.05 |
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(SINGLE PULSE) |
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0.03 |
SECOND BREAKDOWN LIMITED |
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BD157 |
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, |
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C |
0.02 |
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I |
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BD158 |
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0.01 |
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BD159 |
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20 |
30 |
50 |
100 |
200 |
300 |
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10 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 3. DC Safe Operating Area
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1.0 |
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(VOLTS) |
0.8 |
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V |
BE |
@ I |
C/I |
B |
= |
10 |
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0.6 |
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V |
BE @ VCE = |
10 V |
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VOLTAGEV, |
0.4 |
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0.2 |
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VCE(sat) |
@ |
IC |
/IB = |
10 |
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TJ = |
+ 25 |
°C |
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IC/IB |
= 5.0 |
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0 |
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20 |
30 |
50 |
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100 |
200 |
300 |
500 |
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10 |
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IC, COLLECTOR CURRENT (mA)
Figure 2. ªOnº Voltages
The Safe Operating Area Curves indicate IC ± VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below, the maximum TJ, power±temperature derating must be observed for both steady state and pulse power conditions.
hFE, DC CURRENT GAIN
300
200
100
70
50
30
20
10
1.0
VCE = 10 V
VCE = 2.0 V
TJ = 150°C
+100°C
+25°C
±55°C
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
200 |
300 |
500 |
IC, COLLECTOR CURRENT (mAdc)
Figure 4. Current Gain
2 |
Motorola Bipolar Power Transistor Device Data |
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