MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD789/D
Complementary Plastic Silicon
Power Transistors
. . . designed for low power audio amplifier and low±current, high speed switching applications.
• High Collector±Emitter Sustaining Voltage Ð
VCEO(sus) = 80 Vdc (Min) Ð BD789, BD790
VCEO(sus) = 100 Vdc (Min) Ð BD791, BD792
• High DC Current Gain @ IC = 200 mAdc
hFE = 40±250
• Low Collector±Emitter Saturation Voltage Ð
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc
• High Current Gain Ð Bandwidth Product Ð fT = 40 MHz (Min) @ IC = 100 mAdc)
*MAXIMUM RATINGS
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BD789 |
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BD791 |
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Rating |
Symbol |
BD790 |
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BD792 |
Unit |
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Collector±Emitter Voltage |
VCEO |
80 |
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100 |
Vdc |
Collector±Base Voltage |
VCB |
80 |
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100 |
Vdc |
Emitter±Base Voltage |
VEBO |
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6.0 |
Vdc |
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Collector Current Ð Continuous |
IC |
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4.0 |
Adc |
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Ð Peak |
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8.0 |
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Base Current |
IB |
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1.0 |
Adc |
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Total Power Dissipation @ TC = 25_C |
PD |
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15 |
Watts |
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Derate above 25_C |
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0.12 |
W/_C |
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Operating and Storage Junction |
TJ,Tstg |
± 65 to +150 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
8.34 |
_C/W |
NPN
BD789
BD791*
PNP
BD790
BD792*
*Motorola Preferred Device
4 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
80, 100 VOLTS
15 WATTS
CASE 77±08
TO±225AA TYPE
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16 |
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1.6 |
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POWERDISSIPATION (WATTS) |
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P |
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D |
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12 |
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1.2 |
DISSIPATION POWER , |
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C |
8.0 |
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0.8 |
T |
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T |
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A |
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4.0 |
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0.4 |
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, |
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(WATTS) |
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D |
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P |
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0 |
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0 |
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20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
BD789 |
BD791 |
BD790 |
BD792 |
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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 10 mAdc, IB = 0) |
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BD789, BD790 |
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80 |
Ð |
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BD791, BD792 |
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100 |
Ð |
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Collector Cutoff Current |
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ICEO |
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μAdc |
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(VCE = 40 Vdc, IB = 0) |
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BD789, BD790 |
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Ð |
100 |
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(VCE = 50 Vdc, IB = 0) |
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BD791, BD792 |
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Ð |
100 |
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Collector Cutoff Current |
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ICEX |
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(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) |
BD789, BD790 |
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Ð |
1.0 |
μAdc |
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(VCE = 100 Vdc, VBE(off) = 1.5 Vdc) |
BD791, BD792 |
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Ð |
1.0 |
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(VCE = 40 Vdc, VBE(off) = 1 5 Vdc, TC = 125_C) |
BD789, BD790 |
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Ð |
0.1 |
mAdc |
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(VCE = 50 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) |
BD791, BD792 |
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Ð |
0.1 |
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Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) |
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IEBO |
Ð |
1.0 |
μAdc |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 200 mAdc, VCE = 3 0 Vdc) |
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40 |
250 |
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(IC = 1.0 Adc, VCE = 3.0 Vdc) |
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20 |
Ð |
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(IC = 2.0 Adc, VCE = 3.0 Vdc) |
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10 |
Ð |
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(IC = 4.0 Adc, VCE = 3.0 Vdc) |
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5.0 |
Ð |
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Collector Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 500 mAdc, IB = 50 mAdc) |
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Ð |
0.5 |
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(IC = 1.0 Adc, IB = 100 mAdc) |
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Ð |
1.0 |
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(IC = 2.0 Adc, IB = 200 mAdc) |
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Ð |
2.5 |
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(IC = 4.0 Adc, IB = 800 mAdc) |
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Ð |
3.0 |
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Base±Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) |
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VBE(sat) |
Ð |
1.8 |
Vdc |
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Base±Emitter On Voltage (IC = 200 mAdc, VCE = 3.0 Vdc) |
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VBE(on) |
Ð |
1.5 |
Vdc |
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DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product |
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fT |
40 |
Ð |
MHz |
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(IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz) |
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Output Capacitance |
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Cob |
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pF |
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(VCB = 10 Vdc, IC = 0, f = 0.1 MHz) |
BD789, BD791 |
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Ð |
50 |
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BD790, BD792 |
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Ð |
70 |
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Small±Signal Current Gain |
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hfe |
10 |
Ð |
Ð |
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(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
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* Indicates JEDEC Registered Data. |
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(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. |
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+ 30 V |
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500 |
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25 μs |
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VCC |
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300 |
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TJ = 25°C |
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RC |
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200 |
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V |
= 30 V |
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+ 11 V |
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CC |
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SCOPE |
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IC/IB = 10 |
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100 |
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0 |
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RB |
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(ns) |
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70 |
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51 |
D1 |
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tr |
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± 9.0 V |
TIMEt, |
50 |
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tr, tf v 10 ns |
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30 |
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20 |
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DUTY CYCLE = 1.0% |
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± 4 V |
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td @ VBE(off) = 5.0 V |
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RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
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10 |
BD789, 791 (NPN) |
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D1 MUST BE FAST RECOVERY TYPE, eg |
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7.0 |
BD790, 792 (PNP) |
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MBR340 USED ABOVE IB [ 100 mA |
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5.0 |
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MSD6100 USED BELOW IB [ 100 mA |
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0.04 |
0.06 0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
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FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 2. Switching Time Test Circuit |
Figure 3. Turn±On Time |
2 |
Motorola Bipolar Power Transistor Device Data |
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