Motorola BD682, BD678A, BD678, BD680A, BD680 Datasheet
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD676/D
Plastic Medium-Power
Silicon PNP Darlingtons
. . . for use as output devices in complementary general±purpose amplifier applications.
• High DC Current Gain Ð
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
•Monolithic Construction
•BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681
•BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
MAXIMUM RATING
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BD676 |
BD678 |
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BD680 |
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Rating |
Symbol |
BD676A |
BD678A |
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BD680A |
BD682 |
Unit |
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Collector±Emitter Voltage |
VCEO |
45 |
60 |
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80 |
100 |
Vdc |
Collector±Base Voltage |
VCB |
45 |
60 |
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80 |
100 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
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Vdc |
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Collector Current |
IC |
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4.0 |
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Adc |
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Base Current |
IB |
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0.1 |
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Adc |
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Total Device Dissipation |
PD |
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40 |
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Watts |
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@ TC = 25 _C |
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Derate above 25 _C |
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0.32 |
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W/_C |
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Operating and Storage Junction |
TJ, Tstg |
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± 55 to +150 |
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_C |
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Temperating Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
θJC |
3.13 |
_C/W |
BD676
BD676A
BD678
BD678A
BD680
BD680A
BD682
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLTS
40 WATTS
CASE 77±08
TO±225AA TYPE
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50 |
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(WATTS) |
45 |
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40 |
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35 |
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DISSIPATION |
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30 |
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25 |
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20 |
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,POWER |
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15 |
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10 |
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D |
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P |
5.0 |
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0 |
30 |
45 |
60 |
75 |
90 |
105 |
120 |
135 |
150 |
165 |
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15 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Temperature Derating
REV 7
Motorola, Inc. 1995
BD676 |
BD676A |
BD678 |
BD678A |
BD680 |
BD680A |
BD682 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage(1) |
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BD676, 676A |
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BV |
45 |
Ð |
Vdc |
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(IC = 50 mAdc, IB = 0) |
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BD678, 678A |
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CEO |
60 |
Ð |
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BD680, 680A |
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80 |
Ð |
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BD682 |
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100 |
Ð |
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Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) |
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ICEO |
Ð |
500 |
μAdc |
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Collector Cutoff Current |
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ICBO |
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mAdc |
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(VCB = Rated BVCEO, IE = 0) |
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Ð |
0.2 |
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(VCB = Rated BVCEO. IE = 0, TC = 100°C) |
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Ð |
2.0 |
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Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) |
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IEBO |
Ð |
2.0 |
mAdc |
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ON CHARACTERISTICS |
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DC Current Gain(1) |
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hFE |
750 |
Ð |
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(IC = 1.5 Adc, VCE = 3.0 Vdc) |
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BD676, 678, 680, 682 |
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(IC = 2.0 Adc, VCE = 3.0 Vdc) |
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BD676A, 678A, 680A |
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750 |
Ð |
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Collector±Emitter Saturation Voltage(1) |
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(IC = 1.5 Adc, IB = 30 mAdc) |
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BD678, 680, 682 |
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VCE(sat) |
Ð |
2.5 |
Vdc |
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(IC = 2.0 Adc, IB = 40 mAdc) |
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BD676A, 678A, 680A |
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Ð |
2.8 |
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Base±Emitter On Voltage(1) |
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VBE(on) |
Ð |
2.5 |
Vdc |
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(IC = 1.5 Adc, VCE = 3.0 Vdc) |
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BD678, 680, 682 |
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(IC = 2.0 Adc, VCE = 3.0 Vdc) |
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BD676A, 678A, 680A |
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Ð |
2.5 |
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DYNAMIC CHARACTERISTICS |
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Small±Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) |
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hfe |
1.0 |
Ð |
Ð |
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(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. |
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5.0 |
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(AMP) |
2.0 |
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CURRENT |
1.0 |
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BONDING WIRE LIMIT |
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0.5 |
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THERMAL LIMIT at TC = 25°C |
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,COLLECTOR |
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SECONDARY BREAKDOWN LIMIT |
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0.2 |
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BD676, 676A |
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T |
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° |
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BD678, 678A |
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C |
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0.1 |
C |
= 25 C |
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I |
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BD680, 680A |
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0.05 |
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BD682 |
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2.0 |
5.0 |
10 |
20 |
50 |
100 |
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1.0 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
PNP |
COLLECTOR |
BD676, 676A |
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BD678, 678A |
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BD680, 680A |
|
BD682 |
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BASE |
|
[ 8.0 k |
[ 120 |
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EMITTER |
Figure 3. Darlington Circuit Schematic
2 |
Motorola Bipolar Power Transistor Device Data |
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