Motorola BD810, BD808 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BD808/D

Plastic High Power Silicon

PNP Transistor

. . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

•DC Current Gain Ð h FE = 30 (Min) @ IC = 2.0 Adc

•BD 808, 810 are complementary with BD 807, 890

BD808

BD810*

*Motorola Preferred Device

10 AMPERE

POWER TRANSISTORS

PNP SILICON

60, 80 VOLTS

90 WATTS

MAXIMUM RATINGS

Rating	Symbol	Type	Value	Unit
Collector±Emitter Voltage	VCEO	BD808	60	Vdc
		BD810	80
Collector±Base Voltage	VCBO	BD808	70	Vdc
		BD810	80
Emitter±Base Voltage	VEBO		5.0	Vdc
Collector Current	IC		10	Adc
Base Current	IB		6.0	Adc
Total Device Dissipation TC = 25_C	PD		90	Watts
Derate above 25_C			720	mW/_C
Operating and Storage Junction	TJ, Tstg		± 55 to +150	_C
Temperature Range

THERMAL CHARACTERISTICS
									CASE 221A±06
Characteristic	Symbol		Max		Unit
									TO±220AB
Thermal Resistance, Junction to Case	θJC		1.39		_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic			Symbol		Type		Min		Max		Unit
Collector±Emitter Sustaining Voltage*			BVCEO		BD808		60		Ð		Vdc
(IC = 0.1 Adc, IB = 0)					BD810		80		Ð
Collector Cutoff Current			ICBO								mAdc
(VCB = 70 Vdc, IE = 0)					BD808		Ð		1.0
(VCB = 80 Vdc, IE = 0)					BD810		Ð		1.0
Emitter Cutoff Current			IEBO				Ð		2.0		mAdc
(VBE = 5.0 Vdc, IC = 0)
DC Current Gain			hFE
(IC = 2.0 A, VCE = 2.0 V)							30		Ð
(IC = 4.0 A, VCE = 2.0 V)							15		Ð
Collector±Emitter Saturation Voltage*			VCE(sat)				Ð		1.1		Vdc
(IC = 3.0 Adc, IB = 0.3 Adc)
Base±Emitter On Voltage*			VBE(on)				Ð		1.6		Vdc
(IC = 4.0 Adc, VCE = 2.0 Vdc)
Current±Gain Bandwidth Product			fT				1.5		Ð		MHz
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
* Pulse Test: Pulse Width x 300 μs, Duty Cycle x 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

Motorola, Inc. 1995

Figure 4. Current Gain

BD808		BD810
CURRENTCOLLECTOR(AMP)					.5 ms
					DISSIPATIONPOWER(WATTS)
	10		5 ms	1 ms	1 ms
	3			dc
	1	TJ = 150°C
,	0.3				,
C				BD808	D
I					P
	0.1			BD810
		3	10	30	100
	1
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

90

80

70

60

50

40

30

20

10

0

0

25

50

75

100

125

150

175

TC, CASE TEMPERATURE (°C)

VOLTAGE (VOLTS)

Figure 1. Active Region DC Safe Operating Area

		(see Note 1)
	2.0
		TJ = 25°C
	1.8
	1.6
	1.4
	1.2

1.0VBE(sat) @ IC/IB = 10

0.8

0.6
						VCE(sat) @ IC/IB = 10
0.4
0.2		VBE @ VCE = 2.0 V
0
0.01		0.02	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0

IC, COLLECTOR CURRENT (AMP)

Figure 3. ªOnº Voltages

Figure 2. Power±Temperature Derating Curve

	500
GAIN	300					T	J	=		150°C										VCE	=	2.0	V
	100									25°C
, DC CURRENT	50
									± 55°C
FE
h	10
	5.0
			0.05						0.1		0.5					1.0				5.0					10
	0.01

IC, COLLECTOR CURRENT (AMPS)

NORMALIZED EFFECTIVE TRANSIENT	THERMAL RESISTANCE
r(t),

1.0

0.7 D = 0.5

0.5

0.30.2

0.20.1

0.1	0.05												SINGLE P(pk)
										θJC(t) = r(t) θJC			PULSE
0.07	0.02
0.05										D CURVES APPLY FOR POWER					t1
0.03										PULSE TRAIN SHOWN
	0.01		SINGLE PULSE							READ TIME AT t	1				t2
0.02										TJ(pk) ± TC = P(pk) θJC(t)				DUTY CYCLE, D = t1/t2
0.01
0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	20	30	50	100	200	300	500	1000

t, PULSE WIDTH (ms)

Figure 5. Thermal Response

Note 1:

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the limitations imposed by second breakdown.

2	Motorola Bipolar Power Transistor Device Data