MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC846AWT1/D
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier |
COLLECTOR |
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3 |
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applications. They are housed in the SOT±323/SC±70 which is |
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designed for low power surface mount applications. |
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BASE |
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2 |
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MAXIMUM RATINGS |
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EMITTER |
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Rating |
Symbol |
BC846 |
BC847 |
BC848 |
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Unit |
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Collector± Emitter Voltage |
VCEO |
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65 |
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45 |
30 |
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V |
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Collector± Base Voltage |
VCBO |
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80 |
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50 |
30 |
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V |
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Emitter± Base Voltage |
VEBO |
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6.0 |
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6.0 |
5.0 |
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V |
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Collector Current Ð Continuous |
IC |
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100 |
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100 |
100 |
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mAdc |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
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Unit |
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Total Device Dissipation FR±5 Board, (1) |
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PD |
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150 |
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mW |
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TA = 25°C |
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Thermal Resistance, Junction to Ambient |
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RqJA |
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833 |
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°C/W |
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Total Device Dissipation |
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PD |
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2.4 |
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mW/°C |
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Junction and Storage Temperature |
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TJ, Tstg |
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± 55 to +150 |
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°C |
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DEVICE MARKING |
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BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; |
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BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) |
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BC846AWT1,BWT1
BC847AWT1,BWT1,
CWT1
BC848AWT1,BWT1,
CWT1
3
1
2
CASE 419±02, STYLE 3
SOT±323/SC±70
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage |
BC846 Series |
V(BR)CEO |
65 |
Ð |
Ð |
V |
(IC = 10 mA) |
BC847 Series |
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45 |
Ð |
Ð |
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BC848 Series |
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30 |
Ð |
Ð |
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Collector± Emitter Breakdown Voltage |
BC846 Series |
V(BR)CES |
80 |
Ð |
Ð |
V |
(IC = 10 μA, VEB = 0) |
BC847 Series |
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50 |
Ð |
Ð |
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BC848 Series |
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30 |
Ð |
Ð |
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Collector± Base Breakdown Voltage |
BC846 Series |
V(BR)CBO |
80 |
Ð |
Ð |
V |
(IC = 10 mA) |
BC847 Series |
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50 |
Ð |
Ð |
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BC848 Series |
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30 |
Ð |
Ð |
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Emitter± Base Breakdown Voltage |
BC846 Series |
V(BR)EBO |
6.0 |
Ð |
Ð |
V |
(IE = 1.0 mA) |
BC847 Series |
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6.0 |
Ð |
Ð |
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BC848 Series |
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5.0 |
Ð |
Ð |
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Collector Cutoff Current (VCB = 30 V) |
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ICBO |
Ð |
Ð |
15 |
nA |
(VCB = 30 V, TA = 150°C) |
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Ð |
Ð |
5.0 |
μA |
1. FR±5 = 1.0 x 0.75 x 0.062 in
Thermal Clad is a trademark of the Bergquist Company.
Motorola, Inc. 1996
BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
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Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS |
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DC Current Gain |
BC846A, BC847A, BC848A |
hFE |
Ð |
90 |
Ð |
Ð |
(IC = 10 μA, VCE = 5.0 V) |
BC846B, BC847B, BC848B |
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150 |
Ð |
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BC847C, BC848C |
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Ð |
270 |
Ð |
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(IC = 2.0 mA, VCE = 5.0 V) |
BC846A, BC847A, BC848A |
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110 |
180 |
220 |
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BC846B, BC847B, BC848B |
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200 |
290 |
450 |
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BC847C, BC848C |
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420 |
520 |
800 |
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Collector± Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) |
VCE(sat) |
Ð |
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0.25 |
V |
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Collector± Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) |
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0.6 |
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Base ± Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) |
VBE(sat) |
Ð |
0.7 |
Ð |
V |
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Base ± Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) |
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Ð |
0.9 |
Ð |
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Base ± Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) |
VBE(on) |
580 |
660 |
700 |
mV |
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Base ± Emitter Voltage (IC = 10 mA, VCE = 5.0 V) |
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Ð |
Ð |
770 |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
fT |
100 |
Ð |
Ð |
MHz |
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(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) |
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Output Capacitance (VCB = 10 V, f = 1.0 MHz) |
Cobo |
Ð |
Ð |
4.5 |
pF |
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Noise Figure (IC = 0.2 mA, |
BC846A, BC847A, BC848A |
NF |
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dB |
VCE = 5.0 Vdc, RS = 2.0 kΩ, |
BC846B, BC847B, BC848B |
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Ð |
Ð |
10 |
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f = 1.0 kHz, BW = 200 Hz) |
BC847C, BC848C |
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Ð |
Ð |
4.0 |
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2.0 |
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GAIN |
1.5 |
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VCE = 10 V |
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TA = 25°C |
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CURRENT |
1.0 |
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0.8 |
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DC |
0.6 |
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,NORMALIZED |
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0.4 |
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0.3 |
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FE |
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h |
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0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
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0.2 |
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
(V) |
2.0 |
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TA = 25°C |
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VOLTAGE |
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1.6 |
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IC = 200 mA |
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COLLECTOR±EMITTER |
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1.2 |
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IC = |
IC = IC = 50 mA |
IC = 100 mA |
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10 mA 20 mA |
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0.8 |
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0.4 |
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, |
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CE |
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V |
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0 |
0.1 |
1.0 |
10 |
20 |
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0.02 |
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
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1.0 |
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0.9 |
TA = 25°C |
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0.8 |
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VBE(sat) @ IC/IB = 10 |
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(VOLTS) |
0.7 |
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0.6 |
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VBE(on) @ VCE = 10 V |
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V, VOLTAGE |
0.5 |
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0.4 |
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0.3 |
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0.2 |
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VCE(sat) @ IC/IB = 10 |
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0.1 |
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0 |
0.2 0.3 |
0.5 0.7 1.0 |
2.0 3.0 |
5.0 7.0 10 |
20 |
30 |
50 70 100 |
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0.1 |
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IC, COLLECTOR CURRENT (mAdc) |
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Figure 2. ªSaturationº and ªOnº Voltages
°C) |
1.0 |
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±55°C to +125°C |
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(mV/ |
1.2 |
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COEFFICIENT |
1.6 |
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2.0 |
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, TEMPERATURE |
2.4 |
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2.8 |
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VB |
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θ |
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0.2 |
1.0 |
10 |
100 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 4. Base±Emitter Temperature Coefficient
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |