MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BDW42/D
Darlington Complementary
Silicon Power Transistors
. . . designed for general purpose and low speed switching applications.
•High DC Current Gain ± hFE = 2500 (typ.) @ IC = 5.0 Adc.
•Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min.) Ð BDW46
VCEO(sus) = 100 Vdc (min.) Ð BDW42/BDW47
• Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc
VCE(sat) = 3.0 Vdc (max.) @ IC = 10.0 Adc
•Monolithic Construction with Built±In Base Emitter Shunt resistors
•TO±220AB Compact Package
MAXIMUM RATINGS
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BDW42 |
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Rating |
Symbol |
BDW46 |
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BDW47 |
Unit |
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Collector±Emitter Voltage |
VCEO |
80 |
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100 |
Vdc |
Collector±Base Voltage |
VCB |
80 |
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100 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
Vdc |
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Collector Current Ð Continuous |
IC |
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15 |
Adc |
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Base Current |
IB |
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0.5 |
Adc |
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Total Device Dissipation |
PD |
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85 |
Watts |
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@ TC = 25_C |
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Derate above 25_C |
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0.68 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
1.47 |
_C/W |
NPN
BDW42*
PNP
BDW46 BDW47*
*Motorola Preferred Device
DARLINGTON
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 ± 100 VOLTS
85 WATTS
CASE 221A±06
TO±220AB
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90 |
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(WATTS) |
80 |
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70 |
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60 |
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DISSIPATION |
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50 |
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40 |
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POWER |
30 |
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20 |
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, |
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D |
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P |
10 |
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0 |
50 |
75 |
100 |
125 |
150 |
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25 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Temperature Derating Curve
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
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BDW42 |
BDW46 |
BDW47 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
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Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Ð |
Vdc |
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(IC = 30 mAdc, IB = 0) |
BDW46 |
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80 |
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BDW42/BDW47 |
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100 |
Ð |
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Collector Cutoff Current |
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ICEO |
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mAdc |
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(VCE = 40 Vdc, IB = 0) |
BDW46 |
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Ð |
2.0 |
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(VCE = 50 Vdc, IB = 0) |
BDW42/BDW47 |
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Ð |
2.0 |
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Collector Cutoff Current |
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ICBO |
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mAdc |
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(VCB = 80 Vdc, IE = 0) |
BDW41/BDW46 |
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Ð |
1.0 |
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(VCB = 100 Vdc, IE = 0) |
BDW42/BDW47 |
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Ð |
1.0 |
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Emitter Cutoff Current |
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IEBO |
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Ð |
2.0 |
mAdc |
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(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 5.0 Adc, VCE = 4.0 Vdc) |
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1000 |
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(IC = 10 Adc, VCE = 4.0 Vdc) |
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250 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 5.0 Adc, IB = 10 mAdc) |
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Ð |
2.0 |
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(IC = 10 Adc, IB = 50 mAdc) |
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Ð |
3.0 |
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Base±Emitter On Voltage |
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VBE(on) |
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Ð |
3.0 |
Vdc |
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(IC = 10 Adc, VCE = 4.0 Vdc) |
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SECOND BREAKDOWN (2) |
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Second Breakdown Collector |
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IS/b |
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Adc |
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Current with Base Forward Biased |
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BDW42 |
VCE = 28.4 Vdc |
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3.0 |
Ð |
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VCE = 40 Vdc |
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1.2 |
Ð |
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BDW46/BDW47 |
VCE = 22.5 Vdc |
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3.8 |
Ð |
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VCE = 36 Vdc |
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1.2 |
Ð |
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DYNAMIC CHARACTERISTICS |
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Magnitude of common emitter small signal short circuit current transfer ratio |
fT |
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4.0 |
Ð |
MHz |
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(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) |
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Output Capacitance |
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Cob |
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pF |
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(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
BDW42 |
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Ð |
200 |
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BDW46/BDW47 |
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Ð |
300 |
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Small±Signal Current Gain |
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hfe |
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300 |
Ð |
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(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) |
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(1)Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2.0%.
(2)Pulse Test non repetitive: Pulse Width = 250 ms.
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
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± 30 V |
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D1 MUST BE FAST RECOVERY TYPES, e.g.: |
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1N5825 USED ABOVE IB [ 100 mA |
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RC SCOPE |
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MSD6100 USED BELOW IB [ 100 mA |
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TUT |
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V2 |
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RB |
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APPROX |
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+ 8.0 V |
51 |
D1 |
[ 8.0 k |
[ 150 |
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0 |
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V1 |
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+ 4.0 V |
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APPROX |
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25 μs |
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for td and tr, D1 id disconnected |
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± 12 V |
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tr, tf v 10 ns |
and V2 = 0 |
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For NPN test circuit reverse all polarities |
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DUTY CYCLE = 1.0% |
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5.0 |
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3.0 |
ts |
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2.0 |
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( μs) |
1.0 |
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tf |
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0.7 |
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t, TIME |
0.5 |
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0.3 |
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tr |
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0.2 |
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VCC = 30 V |
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0.1 |
IC/IB = 250 |
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IB1 = IB2 |
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0.07 |
° |
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td @ VBE(off) = 0 V |
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0.05 |
TJ = 25 C |
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0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 2. Switching Times Test Circuit |
Figure 3. Switching Times |
Motorola Bipolar Power Transistor Device Data |
3±213 |
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