MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC307/D
Amplifier |
Transistors |
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PNP Silicon |
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COLLECTOR |
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1 |
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2 |
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BASE |
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3 |
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EMITTER |
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MAXIMUM RATINGS |
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BC |
BC |
BC |
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Rating |
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Symbol |
307 |
308C |
309 |
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Unit |
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Collector± Emitter Voltage |
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VCEO |
±45 |
±25 |
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±25 |
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Vdc |
Collector± Base Voltage |
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VCBO |
±50 |
±30 |
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±30 |
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Vdc |
Emitter± Base Voltage |
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VEBO |
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±5.0 |
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Vdc |
Collector Current Ð Continuous |
IC |
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±100 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
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350 |
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mW |
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Derate above 25°C |
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2.8 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
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1.0 |
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Watts |
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Derate above 25°C |
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8.0 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
RqJA |
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357 |
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°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
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125 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
BC307,B,C
BC308C
BC309B
1
2 3
CASE 29±04, STYLE 17 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage |
BC307 |
V(BR)CEO |
±45 |
Ð |
Ð |
Vdc |
(IC = ±2.0 mAdc, IB = 0) |
BC308C |
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±25 |
Ð |
Ð |
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BC309B |
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±25 |
Ð |
Ð |
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Emitter± Base Breakdown Voltage |
BC307 |
V(BR)EBO |
±5.0 |
Ð |
Ð |
Vdc |
(IE = ±100 mAdc, IC = 0) |
BC308C |
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±5.0 |
Ð |
Ð |
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BC309B |
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±5.0 |
Ð |
Ð |
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Collector±Emitter Leakage Current |
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ICES |
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(VCES = ±50 V, VBE = 0) |
BC307 |
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Ð |
±0.2 |
±15 |
nAdc |
(VCES = ±30 V, VBE = 0) |
BC308C |
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Ð |
±0.2 |
±15 |
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BC309B |
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Ð |
±0.2 |
±15 |
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(VCES = ±50 V, VBE = 0) TA = 125°C |
BC307 |
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Ð |
±0.2 |
±4.0 |
μA |
(VCES = ±30 V, VBE = 0) TA = 125°C |
BC308C |
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Ð |
±0.2 |
±4.0 |
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BC309B |
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Ð |
±0.2 |
±4.0 |
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Motorola, Inc. 1996
BC307,B,C BC308C BC309B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS
DC Current Gain |
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hFE |
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Ð |
(IC = ±10 μAdc, VCE = ±5.0 Vdc) |
BC307B/309B |
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Ð |
150 |
Ð |
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BC307C/308C |
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Ð |
270 |
Ð |
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(IC = ±2.0 mAdc, VCE = ±5.0 Vdc) |
BC307 |
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120 |
Ð |
800 |
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BC308C |
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120 |
Ð |
800 |
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(IC = ±100 mAdc, VCE = ±5.0 Vdc) |
BC307B/309B |
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200 |
290 |
460 |
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BC307C/308C |
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420 |
500 |
800 |
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BC307B/309B |
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Ð |
180 |
Ð |
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BC307C/308C |
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Ð |
300 |
Ð |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
(IC = ±10 mAdc, IB = ±0.5 mAdc) |
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Ð |
±0.10 |
±0.3 |
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(IC = ±10 mAdc, IB = see Note 1) |
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Ð |
±0.30 |
±0.6 |
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(IC = ±100 mAdc, IB = ±5.0 mAdc) |
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Ð |
±0.25 |
Ð |
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Base ± Emitter Saturation Voltage |
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VBE(sat) |
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Vdc |
(IC = ±10 mAdc, IB = ±0.5 mAdc) |
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Ð |
±0.7 |
Ð |
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(IC = ±100 mAdc, IB = ±5.0 mAdc) |
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Ð |
±1.0 |
Ð |
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Base±Emitter On Voltage |
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VBE(on) |
±0.55 |
±0.62 |
±0.7 |
Vdc |
(IC = ±2.0 mAdc, VCE = ±5.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
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MHz |
(IC = ±10 mAdc, VCE = ±5.0 Vdc, f = 100 MHz) |
BC307 |
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Ð |
280 |
Ð |
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BC308C |
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Ð |
320 |
Ð |
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BC309B |
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Ð |
360 |
Ð |
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Common Base Capacitance |
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Ccbo |
Ð |
Ð |
6.0 |
pF |
(VCB = ±10 Vdc, IC = 0, f = 1.0 MHz) |
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Noise Figure |
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NF |
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dB |
(IC = ±0.2 mAdc, VCE = ±5.0 Vdc, |
BC309 |
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Ð |
2.0 |
4.0 |
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RS = 2.0 kΩ, f = 1.0 kHz) |
BC307 |
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Ð |
2.0 |
10 |
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(IC = ±0.2 mAdc, VCE = ±5.0 Vdc, |
BC308C |
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Ð |
2.0 |
10 |
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RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz) |
BC309B |
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Ð |
2.0 |
4.0 |
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1. IC = ±10 mAdc on the constant base current characteristic, which yields the point IC = ±11 mAdc, VCE = ±1.0 V.
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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