Motorola BD179-10, BD179 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BD179/D

BD179

Plastic

Medium

Power

Silicon

BD179-10

NPN

Transistor

. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing

3.0 AMPERES

POWER TRANSISTORS

complementary or quasi complementary circuits.

NPN SILICON

• DC Current Gain Ð h FE = 40 (Min) @ IC = 0.15 Adc

80 VOLTS

• BD179 is complementary with BD180

30 WATTS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector±Emitter Voltage

VCEO

80

Vdc

Collector±Base Voltage

VCBO

80

Vdc

Emitter±Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

3.0

Adc

Base Current

IB

1.0

Adc

Total Device Dissipation @ TC = 25_C

PD

30

Watts

Derate above 25_C

240

mw/_C

Operating and Storage Junction

TJ, Tstg

± 65 to +150

_C

Temperature Range

THERMAL CHARACTERISTICS

CASE 77±08

Characteristic

Symbol

Max

Unit

TO±225AA TYPE

Thermal Resistance, Junction to Case

θJC

4.16

_C/W

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector±Emitter Sustaining Voltage*

V(BR)CEO

80

Ð

Vdc

(IC = 0.1 Adc, IB = 0)

Collector Cutoff Current

ICBO

Ð

0.1

mAdc

(VCB = 80 Vdc, IE = 0)

Emitter Cutoff Current

IEBO

Ð

1.0

mAdc

(VBE = 5.0 Vdc, IC = 0)

DC Current Gain

hFE

(IC = 0.15 A, VCE = 2.0 V)

BD179±10

63

160

(IC = 1.0 A, VCE = 2.0 V)

ALL

15

Ð

Collector±Emitter Saturation Voltage*

VCE(sat)

Ð

0.8

Vdc

(IC = 1.0 Adc, IB = 0.1 Adc)

Base±Emitter On Voltage*

VBE(on)

Ð

1.3

Vdc

(IC = 1.0 Adc, VCE = 2.0 Vdc)

Current±Gain ± Bandwidth Product

fT

3.0

Ð

MHz

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

* Pulse Test: Pulse Width x 300 As, Duty Cycle x 2.0%.

REV 7

Motorola, Inc. 1995

BD179 BD179-10

	10								100 μs
(AMP)	7.0
	5.0							1.0 ms
CURRENT	3.0					dc
	2.0						5.0 ms
COLLECTOR	1.0	TJ = 150°C
	0.3		THERMAL LIMITATION
	0.7
	0.5		SECONDARY BREAKDOWN LIMITATION
C			(BASE±EMITTER DISSIPATION IS
,	0.2
I			SIGNIFICANT ABOVE IC = 2.0 AMP)
	0.1		PULSE DUTY CYCLE < 10%
		2.0	3.0	5.0	7.0	10	20	30	50	70	100
	1.0

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

The Safe Operating Area Curves indicate IC ± VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power±temperature derating must be observed for both steady state and pulse power conditions.

hFE, DC CURRENT GAIN (NORMALIZED)

r(t), NORMALIZED EFFECTIVE TRANSIENT

(VOLTS)	1.0
VOLTAGE	0.8
														IC =			0.1		A												0.25 A									0.5	A									1.0		A
COLLECTOR±EMITTER,	0.6
																																																									TJ =			25		°C
	0.4
CE	0.2
V	0
						0.3				0.5									1.0									2.0			3.0			5.0					10						20						30				50					100									200
	0.2
																																		IB, BASE CURRENT (mA)
																												Figure 2. Collector Saturation Region
1000																																							1.5
700																											V	CE	=		2.0		V
500																																							1.2				TJ = 25°C
300																																						(VOLTS)
						T	J	=	+ 150°			C																																VBE(sat)			@ IC/IB =					10
100
200																																						VOLTAGE	0.9
70																																							0.6
						T	J	=	+ 25°C
50																																																VBE @ V				CE	=	2.0		V
30						T	J	=	+ 55°C																														0.3
20
10																																							0						V	CE(sat) @ IC/IB = 10
2.0 3.0				5.0		10				20			30		50				100					200 300				500			1000 2000								2.0 3.0					5.0	10				20		30		50		100					200 300							500		1000 2000
										IC, COLLECTOR CURRENT (mA)																																						IC, COLLECTOR CURRENT (mA)
										Figure 3. Current Gain																																						Figure 4. ªOnº Voltages

	1.0
	0.7	D = 0.5
RESISTANCE	0.5
	0.3	D = 0.2
	0.2	D = 0.1
								SINGLE PULSE
		D = 0.05									θJC(t) = r(t) θJC					P(pk)
	0.1
THERMAL											θJC = 4.16°C/W MAX						t1
	0.07	D = 0.01									θ	°
	0.05										JC = 3.5 C/W TYP
											D CURVES APPLY FOR POWER
	0.03										PULSE TRAIN SHOWN						t2
											READ TIME AT t1
	0.02
											TJ(pk) ± TC = P(pk) θJC(t)					DUTY CYCLE, D = t /t
																			1 2
	0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
	0.01
								t, TIME or PULSE WIDTH (ms)

Figure 5. Thermal Response

2	Motorola Bipolar Power Transistor Device Data