Fairchild Semiconductor MMBFJ113, MMBFJ111, MMBFJ112, J111, J112 Datasheet

Discrete POWER & Signal

Technologies

J111	MMBFJ111
J112	MMBFJ112
J113	MMBFJ113

G

D

G	TO-92
S D	SOT-23	S
	Mark: 6P / 6R / 6S

N-Channel Switch

This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51.

Absolute Maximum Ratings*		TA = 25°C unless otherwise noted
Symbol	Parameter		Value	Units
VDG	Drain-Gate Voltage		35	V
VGS	Gate-Source Voltage		- 35	V
IGF	Forward Gate Current		50	mA
TJ ,Tstg	Operating and Storage Junction Temperature Range		-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics		TA = 25°C unless otherwise noted
Symbol	Characteristic			Max		Units
			J111J113		*MMBFJ111
PD	Total Device Dissipation		350		225	mW
	Derate above 25°C		2.8		1.8	mW/°C
RqJC	Thermal Resistance, Junction to Case		125			°C/W
RqJA	Thermal Resistance, Junction to Ambient		357		556	°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

MMBFJ113 / MMBFJ112 / MMBFJ111 / J113 / J112 / J111

ã1997 Fairchild Semiconductor Corporation

N-Channel Switch

(continued)

Electrical Characteristics		TA = 25°C unless otherwise noted
Symbol	Parameter		Test Conditions		Min	Max	Units
OFF CHARACTERISTICS
V(BR)GSS	Gate-Source Breakdown Voltage		IG = - 1.0 μA, VDS = 0		- 35		V
IGSS	Gate Reverse Current		VGS = - 15 V, VDS = 0			- 1.0	nA
VGS(off)	Gate-Source Cutoff Voltage		VDS = 5.0 V, ID = 1.0 μA	J111	- 3.0	- 10	V
				J112	- 1.0	- 5.0	V
				J113	- 0.5	- 3.0	V
ID(off)	Gate-Source Cutoff Voltage		VDS = 5.0 V, VGS = - 10 V			1.0	nA
ON CHARACTERISTICS
IDSS	Zero-Gate Voltage Drain Current*		VDS = 15 V, IGS = 0	J111	20		mA
				J112	5.0		mA
				J113	2.0		mA
rDS(on)	Drain-Source On Resistance		VDS ≤ 0.1 V, VGS = 0	J111		30	Ω
				J112		50	Ω
				J113		100	Ω
SMALL-SIGNAL CHARACTERISTICS
Cdg(on)	Drain Gate & Source Gate On		VDS = 0, VGS = 0, f = 1.0 MHz			28	pF
Csg(on)	Capacitance
Cdg(off)	Drain-Gate Off Capacitance		VDS = 0, VGS = - 10 V, f = 1.0 MHz			5.0	pF
Csg(off)	Source-Gate Off Capacitance		VDS = 0, VGS = - 10 V, f = 1.0 MHz			5.0	pF

*Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 3.0%

Typical Characteristics

Common Drain-Source

	10				TA = 25°C
	V GS	= 0 V
(mA)				TYP	VGS(off) = - 2.0 V
	8			- 0.2 V
CURRENT				- 0.4 V
	6
				- 0.6 V
DRAIN	4
				- 0.8 V
					- 1.0 V
-	2
D				- 1.4 V	- 1.2 V
I
	0	0.4	0.8	1.2	1.6	2
	0

VDS - DRAIN-SOURCE VOLTAGE (V)

Parameter Interactions

- TRANSCONDUCTANCE (mmhos)	100					100	r
							DS
			r DS				RESISTANCE "ON" DRAIN -
	50					50
	20	g fs				20
				I DSS , g fs @ V DS = 15V,
	10			V GS = 0 PULSED		10
				r DS @ 1.0 mA, VGS = 0
		I		V GS(off) @ V DS = 15V,
			DSS	I D = 1.0 nA
fs
	5					5	)Ω(
g		_ 1	_ 2	_ 5
	_ 0.5				_	10

VGS (OFF) - GATE CUTOFF VOLTAGE (V)

MMBFJ113 / MMBFJ112 / MMBFJ111 / J113 / J112 / J111