Texas Instruments LT1009CLPM, LT1009CLP, LT1009CDR, LT1009CD, LT1009Y Datasheet

LT1009 2.5-V INTEGRATED REFERENCE CIRCUITS

SLVS013G ± MAY 1987 ± REVISED NOVEMBER 1999

D	Excellent Temperature Stability		D PACKAGE
D	Initial Tolerance . . . 0.2% Max			(TOP VIEW)
D	Dynamic Impedance . . . 0.6 Ω Max	NC		1	8		CATHODE
D	Wide Operating Current Range	NC		2	7		NC
D	Directly Interchangeable With LM136	NC		3	6		CATHODE
D Needs No Adjustment for Minimum		ANODE		4	5		ADJ
	Temperature Coefficient
D	Surface-Mount Three-Lead Package	NC ± No internal connection

description

The LT1009 reference circuit is a precision-trimmed 2.5-V shunt regulator featuring low dynamic impedance and a wide operating current range. The maximum initial tolerance is

±5 mV in the LP package and ±10 mV in the D package. The reference tolerance is achieved by on-chip trimming, which minimizes the initial voltage tolerance and the temperature coefficient αvz.

Although the LT1009 needs no adjustments, a third terminal (ADJ) allows the reference voltage to be adjusted ±5% to eliminate system errors. In many applications, the LT1009 can be used as a terminal-for-terminal replacement for the LM136-2.5, which eliminates the external trim network.

LP PACKAGE (TOP VIEW)

ANODE

CATHODE

ADJ

logic symbol

ANODE CATHODE

ADJ

The LT1009 uses include 5-V system references, 8-bit ADC and DAC references, and power-supply monitors. The device also can be used in applications such as digital voltmeters and current-loop measurement and control systems.

The LT1009C is characterized for operation from 0°C to 70°C. The LT1009I is characterized for operation from ±40°C to 85°C.

AVAILABLE OPTIONS

		PACKAGED DEVICES		CHIP
		SMALL	PLASTIC
	TA			FORM
		OUTLINE	CYLINDRICAL
				(Y)
		(D)	(LP)
	0°C to 70°C	LT1009CD	LT1009CLP	LT1009Y
	± 40°C to 85°C	LT1009ID	LT1009ILP

The D and LP packages are available taped and reeled. Add the suffix R to device type (e.g., LT1009CDR). Chip forms are tested at 25°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1999, Texas Instruments Incorporated

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LT1009

2.5-V INTEGRATED REFERENCE CIRCUITS

SLVS013G ± MAY 1987 ± REVISED NOVEMBER 1999

schematic

			CATHODE
	Q14		Q11
	24 kΩ	24 kΩ	6.6 kΩ
	Q8
	Q7
	20 pF
	30 pF	Q10
	10 kΩ
Q2			500 Ω
	Q9		30 kΩ
	Q4
Q1			ADJ
Q3	Q6		6.6 kΩ

	Q12
Q5	Q13
	720 Ω

ANODE

All component values shown are nominal.

absolute maximum ratings over operating free-air temperature range²

Reverse current, IR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . . 20 mA
Forward current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . 10 mA
Package thermal impedance, θJA, (see Notes 1 and 2): D package . . . . . . . . . . . . . . . . . . . . . .	. . . . . . 97°C/W
LP package . . . . . . . . . . . . . . . . . . . . .	. . . . . 156°C/W
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D and LP packages . . . . . .	. . . . . . . 260°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	±65°C to 150°C

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. Maximumpower dissipation is a function of TJ(max),θJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) ± TA)/θJA. Operation at the absolute maximum TJ of 150°C can impact reliability.

2. The package thermal impedance is calculated in accordance with JESD 51.

recommended operating conditions

			MIN	MAX	UNIT
	Operating free-air temperature range, TA	LT1009C	0	70	°C
		LT1009I	±40	85

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LT1009 2.5-V INTEGRATED REFERENCE CIRCUITS

SLVS013G ± MAY 1987 ± REVISED NOVEMBER 1999

electrical characteristics at specified free-air temperature

	PARAMETER		TEST CONDITIONS		T ²		LT1009C			LT1009I		UNIT
					A	MIN	TYP	MAX	MIN	TYP	MAX
				D package	25°C	2.49	2.5	2.51	2.49	2.5	2.51
	VZ	Reference voltage	IZ = 1 mA	LP package		2.495	2.5	2.505	2.495	2.5	2.505	V
				D package	Full range	2.485		2.515	2.475		2.525
				LP package		2.491		2.509	2.48		2.52
	VF	Forward voltage	IF = 2 mA		25°C	0.4		1	0.4		1	V
			IZ = 1 mA,			125			125
			VADJ = GND to VZ
		Adjustment range			25°C							mV
			IZ = 1 mA,			45			45
			VADJ = 0.6 V to VZ ± 0.6 V
	VZ(temp)	Change in		D package	Full range			5			15	mV
		reference voltage
				LP package				4			15
		with temperature
		Average			0°C to 70°C		15	25			30
		temperature
	αVZ											ppm/°C
		coefficient of			± 40°C to 85°C					20
		reference voltage³
	VZ	Change in	IZ = 400 µA to 10 mA		25°C		2.6	10		2.6	6	mV
		reference voltage
					Full range			12			10
		with current
		Long-term change
	VZ/ t	in reference	IZ = 1 mA		25°C		20			20		ppm/khr
		voltage
	zz	Reference	IZ = 1 mA		25°C		0.3	1		0.3	1	Ω
		impedance			Full range			1.4			1.4

² Full range is 0°C to 70°C for the LT1009C and ± 40°C to 85°C for the LT1009I.

³The average temperature coefficient of reference voltage is defined as the total change in reference voltage divided by the specified temperature range.

electrical characteristics at TA = 25°C

	PARAMETER	TEST CONDITIONS			LT1009Y		UNIT
				MIN	TYP	MAX
VZ	Reference voltage	IZ = 1 mA		2.49	2.5	2.51	V
VF	Forward voltage	IF = 2 mA		0.4		1	V
	Adjustment range	IZ = 1 mA,	VADJ = GND to VZ	125			mV
		IZ = 1 mA,	VADJ = 0.6 V to VZ ± 0.6 V	45
VZ(temp)	Change in reference voltage with temperature				2.5		mV
α VZ	Average temperature coefficient of				15		ppm/°C
	reference voltage³
VZ	Change in reference voltage with current	IZ = 400 µA to 10 mA			2.6		mV
VZ/ t	Long-term change in reference voltage	IZ = 1 mA			20		ppm/khr
zz	Reference impedance	IZ = 1 mA			0.3	1	W

³The average temperature coefficient of reference voltage is defined as the total change in reference voltage divided by the specified temperature range.

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