Texas Instruments LT1004IDR-2-5, LT1004IDR-1-2, LT1004ID-2-5, LT1004CLP-2-5, LT1004CLP-1-2 Datasheet

LT1004-1.2, LT1004-2.5

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H ± JANUARY 1989 ± REVISED JULY 1999

D	Initial Accuracy			D PACKAGE
	± ±4 mV for LT1004-1.2			(TOP VIEW)
	± ±20 mV for LT1004-2.5	NC					CATHODE
				1	8
D	Micropower Operation
		NC		2	7		NC
D Operates up to 20 mA
		NC		3	6		CATHODE
	Very Low Reference Impedance
D		ANODE		4	5		NC
D	Applications:
	± Portable Meter Reference	NC ± No internal connection
	± Portable Test Instruments	Terminals 6 and 8 are internally connected.
	± Battery-Operated Systems		LP PACKAGE
	± Current-Loop Instrumentation
				(TOP VIEW)

description	ANODE

The LT1004 micropower voltage reference is a	CATHODE
two-terminal band-gap reference diode designed
to provide high accuracy and excellent
temperature characteristics at very low operating
currents. Optimizing the key parameters in the
design, processing, and testing of the device
results in specifications previously attainable only
with selected units.

The LT1004 is a pin-for-pin replacement for the LM285 and LM385 series of references, with improved specifications. It is an excellent device for use in systems in which accuracy was previously attained at the expense of power consumption and trimming.

The LT1004C is characterized for operation from 0°C to 70°C. The LT1004I is characterized for operation from ±40°C to 85°C.

symbol

		ANODE				CATHODE
			(A)			(K)
			AVAILABLE OPTIONS
			PACKAGED DEVICES				CHIP
		VZ
			SMALL
	TA					PLASTIC	FORM
		TYP	OUTLINE
						(LP)	(Y)
			(D)
	0°C to 70°C	1.2 V	LT1004CD-1.2			LT1004CLP-1.2	LT1004Y-1.2
		2.5 V	LT1004CD-2.5			LT1004CLP-2.5	LT1004Y-2.5
	±40°C to 85°C	1.2 V	LT1004ID-1.2			LT1004ILP-1.2	Ð
		2.5 V	LT1004ID-2.5			LT1004ILP-2.5	Ð

For ordering purposes, the decimal point in the part number must be replaced with a hyphen (e.g., show the -1.2 suffix as -1-2 and the -2.5 suffix as -2-5). The D package is available taped and reeled. Add the R suffix to the device type (e.g., LT1004CDR-1-2). Chip forms are tested at 25°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1999, Texas Instruments Incorporated

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

1

LT1004-1.2, LT1004-2.5

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H ± JANUARY 1989 ± REVISED JULY 1999

schematic

			LT1004-1.2
			CATHODE
		7.5 kΩ	Q12
		Q3	200 kΩ
			Q11
		Q4
	Q2
			Q10
Q1	20 pF	20 pF	50 kΩ
		600 kΩ	Q9

500 kΩ

Q5

500 Ω Q6

Q7

60 kΩ

		LT1004-2.5
	7.5 kΩ
	Q3	Q11
	Q4
	Q2
		Q10
Q1	20 pF	20 pF
		600 kΩ
	500 kΩ
	Q5
	500 Ω Q6	Q7
	60 kΩ

NOTE A: All component values shown are nominal.

300 kΩ

Q8

Q13

ANODE

CATHODE

Q12

200 kΩ

500 kΩ

50 kΩ

Q9

300 kΩ

Q8

Q13

500 kΩ

ANODE

2	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

LT1004-1.2, LT1004-2.5

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H ± JANUARY 1989 ± REVISED JULY 1999

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)²

Reverse current, IR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . 30 mA
Forward current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . 10 mA
Package thermal impedance, θJA (see Notes 1 and 2): D package . . . . . . . . . . . . . . . . . . . . . .	. . . . . . 97°C/W
LP package . . . . . . . . . . . . . . . . . . . . .	. . . . . 156°C/W
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . .	. . . . . . . 260°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	±65°C to 150°C

²Stresses beyond those listed under ªabsolute maximum ratingsº may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ªrecommended operating conditionsº is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) ± TA)/θJA. Operating at the absolute maximum TJ of 150°C can impact reliability.

2.The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace length of zero.

recommended operating conditions

			MIN	MAX	UNIT
	Operating free-air temperature, TA	LT1004C	0	70	°C
		LT1004I	±40	85

electrical characteristics at specified free-air temperature

PARAMETER

TEST

T ³

LT1004-1.2

LT1004-2.5

UNIT

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

A

25°C

1.231

1.235

1.239

2.48

2.5

2.52

VZ

Reference voltage

IZ = 100 µA

V

Full

LT1004C

1.225

1.245

2.47

2.53

range

LT1004I

1.225

1.245

2.47

2.53

Average

IZ = 10 µA

25°C

20

ppm/°C

aV

Z

temperature coefficient

IZ = 20 µA

of reference voltage§

20

IZ = IZ(min) to 1 mA

25°C

1

1

Change in

VZ

Full range

1.5

1.5

mV

reference voltage

25°C

10

10

with current

IZ = 1 mA to 20 mA

Full range

20

20

VZ/

t

Long-term change

IZ = 100 µA

25°C

20

20

ppm/khr

in reference voltage

IZ(min)

Minimum

Full range

8

10

12

20

µA

reference current

zz

Reference impedance

IZ = 100 µA

25°C

0.2

0.6

0.2

0.6

Ω

Full range

1.5

1.5

Vn

Broadband

IZ = 100 µA,

25°C

60

120

µV

noise voltage

f = 10 Hz to 10 kHz

³Full range is 0°C to 70°C for the LT1004C and ±40°C to 85°C for the LT1004I.

§The average temperature coefficient of reference voltage is defined as the total change in reference voltage divided by the specified temperature range.

POST OFFICE BOX 655303 •DALLAS, TEXAS 75265

3

LT1004-1.2, LT1004-2.5

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H ± JANUARY 1989 ± REVISED JULY 1999

electrical characteristics, TA = 25°C

	PARAMETER	TEST		LT1004Y-1.2			LT1004Y-2.5			UNIT
		CONDITIONS		MIN	TYP	MAX	MIN	TYP	MAX
VZ	Reference voltage	IZ = 100	µA	1.231	1.235	1.239	2.48	2.5	2.52	V
aVZ	Average temperature coefficient	IZ = 10 µA			20					ppm/°C
	of reference voltage²	IZ = 20 µA						20
VZ/ t	Long-term change in reference voltage	IZ = 100	µA		20			20		ppm/khr
IZ(min)	Minimum reference current				8			12		µA
zz	Reference impedance	IZ = 100	µA		0.2	0.6		0.2	0.6	Ω
Vn	Broadband noise voltage	IZ = 100	µA,		60			120		µV
		f = 10 Hz to 10 kHz

²The average temperature coefficient of reference voltage is defined as the total change in reference voltage divided by the specified temperature range.

TYPICAL CHARACTERISTICS

Table of Graphs

GRAPH TITLE	FIGURE
LT1004x-1.2
Reverse current vs Reverse voltage	1
Reference-voltage change vs Reverse current	2
Forward voltage vs Forward current	3
Reference voltage vs Free-air temperature	4
Reference impedance vs Reference current	5
Noise voltage vs Frequency	6
Filtered output noise voltage vs Cutoff frequency	7
LT1004x-2.5
Transient response	8
Reverse current vs Reverse voltage	9
Forward voltage vs Forward current	10
Reference voltage vs Free-air temperature	11
Reference impedance vs Reference current	12
Noise voltage vs Frequency	13
Filtered output noise voltage vs Cutoff frequency	14
Transient response	15

4	POST OFFICE BOX 655303 •DALLAS, TEXAS 75265