MOTOROLA MPSA14RLRM, MPSA13RLRP, MPSA13, MPSA14RLRP, MPSA14RLRA Datasheet

...
0 (0)
MOTOROLA MPSA14RLRM, MPSA13RLRP, MPSA13, MPSA14RLRP, MPSA14RLRA Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MPSA13/D

Darlington Transistors

NPN Silicon

COLLECTOR 3

BASE 2

EMITTER 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Collector± Emitter Voltage

VCES

30

Vdc

Collector± Base Voltage

VCBO

30

Vdc

Emitter± Base Voltage

VEBO

10

Vdc

Collector Current Ð Continuous

IC

500

mAdc

Total Device Dissipation @ TA = 25°C

PD

625

mW

Derate above 25°C

 

5.0

mW/°C

 

 

 

 

Total Device Dissipation @ TC = 25°C

PD

1.5

Watts

Derate above 25°C

 

12

mW/°C

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 55 to +150

°C

Temperature Range

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

MPSA13 MPSA14*

*Motorola Preferred Device

1

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Collector± Emitter Breakdown Voltage

V(BR)CES

30

Ð

Vdc

(IC = 100 μAdc, IB = 0)

 

 

 

 

Collector Cutoff Current

ICBO

Ð

100

nAdc

(VCB= 30 Vdc, IE = 0)

 

 

 

 

Emitter Cutoff Current

IEBO

Ð

100

nAdc

(VEB= 10 Vdc, IC = 0)

 

 

 

 

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1996

MPSA13 MPSA14

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

ON CHARACTERISTICS(1)

 

 

 

 

 

DC Current Gain

 

hFE

 

 

Ð

(IC = 10 mAdc, VCE = 5.0 Vdc)

MPSA13

 

5,000

Ð

 

 

MPSA14

 

10,000

Ð

 

(IC = 100 mAdc, VCE = 5.0 Vdc)

MPSA13

 

10,000

Ð

 

 

MPSA14

 

20,000

Ð

 

 

 

 

 

 

 

Collector± Emitter Saturation Voltage

 

VCE(sat)

Ð

1.5

Vdc

(IC = 100 mAdc, IB = 0.1 mAdc)

 

 

 

 

 

Base ± Emitter On Voltage

 

VBE(on)

Ð

2.0

Vdc

(IC = 100 mAdc, VCE = 5.0 Vdc)

 

 

 

 

 

SMALL± SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Current±Gain ± Bandwidth Product(2)

 

fT

125

Ð

MHz

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

 

 

 

 

 

1.Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

2.fT = |hfe| S ftest.

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

2

Motorola Small±Signal Transistors, FETs and Diodes Device Data

Loading...
+ 4 hidden pages