Motorola MUN5211T1, MUN5212T1, MUN5213T1, MUN5214T1, MUN5215T1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MUN5211T1/D

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•The SC-70/SOT-323 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

•Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel. Replace ªT1º with ªT3º in the Device Number to order the 13 inch/10,000 unit reel.

PIN3 COLLECTOR (OUTPUT)

R1

PIN1 R2 BASE

(INPUT)

PIN2 EMITTER (GROUND)

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

MUN5211T1

SERIES

Motorola Preferred Devices

NPN SILICON

BIAS RESISTOR

TRANSISTORS

3

1

2

CASE 419-02, STYLE 3

SC-70/SOT-323

		Rating		Symbol			Value		Unit
Collector-Base Voltage				VCBO		50			Vdc
Collector-Emitter Voltage				VCEO		50			Vdc
Collector Current				IC		100			mAdc
Total Power Dissipation @ T	= 25°C(1)			P	D	150			mW
A
Derate above 25°C						1.2			mW/°C
THERMAL CHARACTERISTICS
Thermal Resistance Ð Junction-to-Ambient (surface mounted)				RθJA		833			°C/W
Operating and Storage Temperature Range				TJ, Tstg		± 65 to +150			°C
Maximum Temperature for Soldering Purposes,				TL		260			°C
Time in Solder Bath						10			Sec
DEVICE MARKING AND RESISTOR VALUES
Device		Marking		R1 (K)				R2 (K)
MUN5211T1		8A		10				10
MUN5212T1		8B		22				22
MUN5213T1		8C		47				47
MUN5214T1		8D		10				47
MUN5215T1(2)		8E		10					∞
MUN5216T1(2)		8F		4.7					∞
MUN5230T1(2)		8G		1.0				1.0
MUN5231T1(2)		8H		2.2				2.2
MUN5232T1(2)		8J		4.7				4.7
MUN5233T1(2)		8K		4.7				47
MUN5234T1(2)		8L		22				47

1.Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

2.New devices. Updated curves to follow in subsequent data sheets.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

	Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1996

MUN5211T1 SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)		ICBO	Ð	Ð	100	nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)		ICEO	Ð	Ð	500	nAdc
Emitter-Base Cutoff Current	MUN5211T1	IEBO	Ð	Ð	0.5	mAdc
(VEB = 6.0 V, IC = 0)	MUN5212T1		Ð	Ð	0.2
	MUN5213T1		Ð	Ð	0.1
	MUN5214T1		Ð	Ð	0.2
	MUN5215T1		Ð	Ð	0.9
	MUN5216T1		Ð	Ð	1.9
	MUN5230T1		Ð	Ð	4.3
	MUN5231T1		Ð	Ð	2.3
	MUN5232T1		Ð	Ð	1.5
	MUN5233T1		Ð	Ð	0.18
	MUN5234T1		Ð	Ð	0.13
Collector-Base Breakdown Voltage (IC = 10 μA, IE = 0)		V(BR)CBO	50	Ð	Ð	Vdc
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)		V(BR)CEO	50	Ð	Ð	Vdc
ON CHARACTERISTICS(3)
DC Current Gain	MUN5211T1	hFE	35	60	Ð
(VCE = 10 V, IC = 5.0 mA)	MUN5212T1		60	100	Ð
	MUN5213T1		80	140	Ð
	MUN5214T1		80	140	Ð
	MUN5215T1		160	350	Ð
	MUN5216T1		160	350	Ð
	MUN5230T1		3.0	5.0	Ð
	MUN5231T1		8.0	15	Ð
	MUN5232T1		15	30	Ð
	MUN5233T1		80	200	Ð
	MUN5234T1		80	150	Ð
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)		VCE(sat)	Ð	Ð	0.25	Vdc
(IC = 10 mA, IB = 5 mA) MUN5230T1/MUN5231T1
(IC = 10 mA, IB = 1 mA) MUN5215T1/MUN5216T1
MUN5232T1/MUN5233T1/MUN5234T1
Output Voltage (on)		VOL				Vdc
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)	MUN5211lT1		Ð	Ð	0.2
	MUN5212T1		Ð	Ð	0.2
	MUN5214T1		Ð	Ð	0.2
	MUN5215T1		Ð	Ð	0.2
	MUN5216T1		Ð	Ð	0.2
	MUN5230T1		Ð	Ð	0.2
	MUN5231T1		Ð	Ð	0.2
	MUN5232T1		Ð	Ð	0.2
	MUN5233T1		Ð	Ð	0.2
	MUN5234T1		Ð	Ð	0.2
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)	MUN5213T1		Ð	Ð	0.2

3. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

						MUN5211T1		SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
	Characteristic		Symbol	Min	Typ	Max		Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)			VOH	4.9	Ð	Ð		Vdc
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ)		MUN5230T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)		MUN5215T1
		MUN5216T1
		MUN5233T1
Input Resistor		MUN5211T1	R1	7.0	10	13		k Ω
		MUN5212T1		15.4	22	28.6
		MUN5213T1		32.9	47	61.1
		MUN5214T1		7.0	10	13
		MUN5215T1		7.0	10	13
		MUN5216T1		3.3	4.7	6.1
		MUN5230T1		0.7	1.0	1.3
		MUN5231T1		1.5	2.2	2.9
		MUN5232T1		3.3	4.7	6.1
		MUN5233T1		3.3	4.7	6.1
		MUN5234T1		15.4	22	28.6
Resistor Ratio	MUN5211T1/MUN5212T1/MUN5213T1		R1/R2	0.8	1.0	1.2
	MUN5214T1			0.17	0.21	0.25
	MUN5215T1/MUN5216T1			Ð	Ð	Ð
	MUN5230T1/MUN5231T1/MUN5232T1			0.8	1.0	1.2
	MUN5233T1			0.055	0.1	0.185
	MUN5234T1			0.38	0.47	0.56

	250
(MILLIWATTS)	200
DISSIPATION	150
	100
, POWER	50		RθJA = 833°C/W
D
P
	0	0	50	100	150
	± 50
		TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3

MUN5211T1 SERIES

TYPICAL ELECTRICAL CHARACTERISTICS Ð MUN5211T1

(VOLTS)	1
		IC/IB = 10	T		= ±25°C
VOLTAGE			A
						25°C
	0.1
COLLECTOR
					75°C
, MAXIMUM	0.01
CE(sat)0.001		0	20	40		50
V
			IC, COLLECTOR CURRENT (mA)

Figure 2. VCE(sat) versus IC

	1000
(NORMALIZED)			VCE = 10 V
			TA = 75°C
			25°C
			±25°C
GAIN
	100
, DC CURRENT
FE
h
	10	10	100
	1

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

Cob, CAPACITANCE (pF)

4													100
																			25°C
								f =	1 MHz						75°	C
								IE	= 0 V
																					°
3								TA = 25°C				(mA)	10						TA	= ±25 C
2												CURRENT	1
												COLLECTOR,
													0.01
1												C	0.1
												I
0 0												0.001																		VO = 5 V
	10			20		30		40		50				0	1		2		3		4	5		6		7		8		9	10
			VR, REVERSE BIAS VOLTAGE (VOLTS)																Vin, INPUT VOLTAGE (VOLTS)
		Figure 4. Output Capacitance													Figure 5. Output Current versus Input Voltage

	10
		VO = 0.2 V		TA = ±25°C
(VOLTS)						25°C
				75°C
, INPUT VOLTAGE	1
in
V
	0.1	10	20	30	40	50
	0
			IC, COLLECTOR CURRENT (mA)

Figure 6. Input Voltage versus Output Current

4	Motorola Small±Signal Transistors, FETs and Diodes Device Data