MOTOROLA MPS6652RLRA, MPS6602, MPS6602RLRA, MPS6601RLRA, MPS6652RLRB Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MPS6601/D

Amplifier

Transistors

COLLECTOR

COLLECTOR

3

3

2

2

BASE

BASE

NPN

PNP

1

1

EMITTER

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector± Emitter Voltage

MPS6601/6651

VCEO

25

Vdc

MPS6602/6652

40

Collector± Base Voltage

MPS6601/6651

VCBO

25

Vdc

MPS6602/6652

30

Emitter± Base Voltage

VEBO

4.0

Vdc

Collector Current Ð Continuous

IC

1000

mAdc

Total Device Dissipation @ TA = 25°C

PD

625

mW

Derate above 25°C

5.0

mW/°C

Total Device Dissipation @ TC = 25°C

PD

1.5

Watts

Derate above 25°C

12

mW/°C

Operating and Storage Junction

TJ, Tstg

± 55 to

°C

Temperature Range

+150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA(1)

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

NPN

MPS6601 MPS6602* PNP MPS6651 MPS6652*

Voltage and current are negative for PNP transistors

*Motorola Preferred Device

1

2 3

CASE 29±04, STYLE 1

TO±92 (TO±226AA)

Characteristic	Symbol	Min	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage		V(BR)CEO			Vdc
(IC = 1.0 mAdc, IB = 0)	MPS6601/6651		25	Ð
	MPS6602/6652		40	Ð
Collector± Base Breakdown Voltage		V(BR)CBO			Vdc
(IC = 100 μAdc, IE = 0)	MPS6601/6651		25	Ð
	MPS6602/6652		40	Ð
Emitter± Base Breakdown Voltage		V(BR)EBO	4.0	Ð	Vdc
(IE = 10 μAdc, IC = 0)
Collector Cutoff Current		ICES			μAdc
(VCE = 25 Vdc, IB = 0)	MPS6601/6651		Ð	0.1
(VCE = 30 Vdc, IB = 0)	MPS6602/6652		Ð	0.1
Collector Cutoff Current		ICBO			μAdc
(VCB = 25 Vdc, IE = 0)	MPS6601/6651		Ð	0.1
(VCB = 30 Vdc, IE = 0)	MPS6602/6652		Ð	0.1

1. RqJA is measured with the device soldered into a typical printed circuit board.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1996

NPN MPS6601 MPS6602 PNP MPS6651 MPS6652

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

	Characteristic		Symbol	Min	Max	Unit
ON CHARACTERISTICS
DC Current Gain			hFE			Ð
(IC = 100 mAdc, VCE = 1.0 Vdc)				50	Ð
(IC = 500 mAdc, VCE = 1.0 Vdc)				50	Ð
(IC = 1000 mAdc, VCE = 1.0 Vdc)				30	Ð
Collector± Emitter Saturation Voltage			VCE(sat)	Ð	0.6	Vdc
(IC = 1000 mAdc, IB = 100 mAdc)
Base±Emitter On Voltage			VBE(on)	Ð	1.2	Vdc
(IC = 500 mAdc, VCE = 1.0 Vdc)
SMALL± SIGNAL CHARACTERISTICS
Current± Gain Ð Bandwidth Product			fT	100	Ð	MHz
(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance			Cobo	Ð	30	pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay Time			td	Ð	25	ns
Rise Time		(VCC = 40 Vdc, IC = 500 mAdc,	tr	Ð	30	ns
		IB1 = 50 mAdc,
Storage Time			ts	Ð	250	ns
		tp w 300 ns Duty Cycle)
Fall Time			tf	Ð	50	ns

		TURN±ON TIME			TURN±OFF TIME
		±1.0 V	VCC		+VBB	VCC
			+40			+40
			V			V
5.0 ms		100	RL		100	RL
+10			OUTPUT			OUTPUT
V	Vin	RB		Vin	RB
0
tr = 3.0 ns		5.0 mF	* CS t 6.0 pF		5.0 mF	* CS t 6.0 pF
		100			100
				5.0 ms
				tr = 3.0 ns

*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

			NPN	MPS6601		MPS6602	PNP	MPS6651 MPS6652
		NPN				PNP
	300			200
	200
GAIN			GAIN	100
				70
CURRENT,	100		CURRENT,		VCE = ±1.0 V
	70			50
FE	50	VCE = 1.0 V	FE		TJ = 25°C
h			h
		TJ = 25°C
	30			20
	10	100	1000	±10		±100		±1000
		IC, COLLECTOR CURRENT (mA)				IC, COLLECTOR CURRENT (mA)

Figure 2. MPS6601/6602 DC Current Gain

Figure 3. MPS6651/6652 DC Current Gain

f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

300

200

100

70

50

30

10

VCE = 10 V TJ = 25°C

f = 30 MHz

100 200

IC, COLLECTOR CURRENT (mA)

1000

f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

300
200
100
70
	VCE = ±10 V
50	TJ = 25°C
	f = 30 MHz
30
±10	±100	±200	±1000

IC, COLLECTOR CURRENT (mA)

Figure 4. Current Gain Bandwidth Product

		1.0
		TJ = 25°C	V	@ I /I = 10
			BE(SAT)	C B
	(VOLTS)	0.8
		0.6	VBE(ON) @ VCE = 1.0 V
	VOLTAGEV,
		0.4

0.2VCE(SAT) @ IC/IB = 10

0
1.0	10	100	1000

IC, COLLECTOR CURRENT (mA)

Figure 6. On Voltages

Figure 5. Current Gain Bandwidth Product

	±1.0	TJ = 25°C
	±0.8	VBE(SAT) @ IC/IB = 10
(VOLTS)	±0.6	VBE(ON) @ VCE = ±1.0 V
VOLTAGEV,
	±0.4
	±0.2	VCE(SAT)	@ IC/IB = 10
	0
	±1.0	±10	±100	±1000

IC, COLLECTOR CURRENT (mA)

Figure 7. On Voltages

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3