Motorola MRF2947RAT2, MRF2947RAT1, MRF2947AT2, MRF2947AT1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF2947/D

The RF Line

NPN Silicon

Low Noise Transistors

Motorola's MRF2947 device contains two high performance, low±noise NPN silicon bipolar transistors. This device has two 941 die housed in the high performance six leaded SC±70ML package; yielding a 9 GHz current gain±bandwidth product.

The RF performance at levels of 1 volt and 1 mA makes the MRF2947 well suited for low±voltage, low±current, front±end applications such as paging, cellular, GSM, DECT, CT2 and other portable wireless systems. The MRF2947 is fully ion±implanted with gold metallization and nitride passivation for maximum device reliability, performance and uniformity.

•Low Noise Figure, NF = 1.5 dB (Typ) @ 1 GHz @ 5 mA

•High Current Gain±Bandwidth Product, ft = 9 GHz (Typ) @ 6 Volts, 15 mA

•Maximum Stable Gain, 18 dB @ 1 GHz @ 5 mA

•Output Third Order Intercept, OIP3 = +27 dBm

•Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel

T2 Suffix = 3,000 Units per 8 mm, 7 inch Reel (reverse device orientation in tape)

B1

E2

C2

MRF2947AT1,T2

MRF2947RAT1,T2

ICmax = 50 mA

LOW NOISE

TRANSISTORS

CASE 419B±01, STYLES 16 & 17

SC±70ML/SOT±363

STYLE 16		STYLE 17
C1	B1	C1
E1	E1	E2
B2	C2	B2

MRF2947AT1,T2 MRF2947RAT1,T2

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Collector±Emitter Voltage	VCEO	10	Vdc
Collector±Base Voltage	VCBO	20	Vdc
Emitter±Base Voltage	VEBO	1.5	Vdc
Power Dissipation (1) TC = 75°C	PDmax	0.188	Watts
Derate linearly above TC = 75°C @		2.5	mW/°C
Collector Current Ð Continuous (2)	IC	50	mA
Maximum Junction Temperature	TJmax	150	°C
Storage Temperature	Tstg	± 55 to +150	°C
Thermal Resistance, Junction to Case	RθJC	400	°C/W

DEVICE MARKINGS

MRF2947AT1,T2 = WU

MRF2947RAT1,T2 = XR

(1)To calculate the junction temperature use TJ = PD x RθJC + TC. The case temperature is measured on collector lead adjacent to the package body.

(2)IC Ð Continuous (MTBF > 10 years).

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA	MRF2947AT1,T2 MRF2947RAT1,T2
	1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS (3)

Collector±Emitter Breakdown Voltage	V(BR)CEO	10	12	Ð	Vdc
(IC = 0.1 mA, IB = 0)
Collector±Base Breakdown Voltage	V(BR)CBO	20	23	Ð	Vdc
(IC = 0.1 mA, IE = 0)
Emitter Cutoff Current	IEBO	Ð	Ð	0.1	μA
(VEB = 1 V, IC = 0)
Collector Cutoff Current	ICBO	Ð	Ð	0.1	μA
(VCB = 10 V, IE = 0)

ON CHARACTERISTICS (3)

DC Current Gain (V	CE	= 1 V, I	C	= 500 μA)	hFE	1	50	Ð	Ð	Ð
DC Current Gain (V	CE	= 6 V, I	C	= 5 mA)	hFE	3	75	Ð	150	Ð

DYNAMIC CHARACTERISTICS

Collector±Base Capacitance

Ccb

Ð

0.42

Ð

pF

(VCB = 1 V, IE = 0, f = 1 MHz)

Current Gain Ð Bandwidth Product

fT

Ð

9

Ð

GHz

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

PERFORMANCE CHARACTERISTICS

Conditions

Symbol

Min

Typ

Max

Unit

Insertion Gain

|S |2

dB

(VCE = 1 V, IC = 1 mA, f = 1 GHz)

21

Ð

7

Ð

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

Ð

15

Ð

Maximum Unilateral Gain (4)

GUmax

dB

(VCE = 1 V, IC = 1 mA, f = 1 GHz)

Ð

13

Ð

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

Ð

17

Ð

Maximum Stable Gain and/or Maximum Available Gain (5)

MSG

dB

(VCE = 1 V, IC = 1 mA, f = 1 GHz)

MAG

Ð

12

Ð

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

Ð

18

Ð

Noise Figure Ð Minimum

NFmin

dB

(VCE = 1 V, IC = 1 mA, f = 1 GHz)

Ð

1.8

Ð

(VCE = 6 V, IC = 5 mA, f = 1 GHz)

Ð

1.5

Ð

Noise Resistance

RN

Ω

(VCE = 1 V, IC = 1 mA, f = 1 GHz)

Ð

22

Ð

(VCE = 6 V, IC = 5 mA, f = 1 GHz)

Ð

17

Ð

Associated Gain at Minimum NF

GNF

dB

(VCE = 1 V, IC = 1 mA, f = 1 GHz)

Ð

9

Ð

(VCE = 6 V, IC = 5 mA, f = 1 GHz)

Ð

14

Ð

Output Power at 1 dB Gain Compression (6)

P1dB

Ð

+13

Ð

dBm

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

Output Third Order Intercept (6)

OIP3

Ð

+27

Ð

dBm

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

(3) Pulse width ≤ 300 μs, duty cycle ≤ 2% pulsed.

|2

|S

(4) Maximum unilateral gain is GUmax =

21

(1 ±|S11|2)(1 ±|S22|2)

|S21|

(5) Maximum available gain and maximum stable gain are defined by the K factor as follows: MAG =

(K " K2 ± 1) , if K > 1

|S12|

(6) ZO = 50 Ω and Zout matched for small signal maximum gain.

|S21|

MSG =

, if K < 1

|S12|

MRF2947AT1,T2 MRF2947RAT1,T2	MOTOROLA RF DEVICE DATA
2

C, CAPACITANCE (pF)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0

TYPICAL CHARACTERISTICS

													1.6
													1.4
								f	= 1 MHz			CAPACITANCE																f	= 1 MHz
													0.8			C	Ib
													1.2
C	ob											INPUT,	1.0
													0.6
												IB
C	cb												0.4
												C
													0.2
													0
2		4			6			8			10			0.2		0.4		0.6		0.8		1.0		1.2		1.4		1.6		1.8	2.0
													0
		VCB, REVERSE VOLTAGE (V)																VEB, EMITTER±BASE VOLTAGE (V)
Figure 1. Capacitance versus Voltage														Figure 2. Input Capacitance versus Voltage

	180
	160
GAIN	140
	120
CURRENT
	100
, DC	80
FE	60
h
	40
	20
	0.1

RF

INPUT

Pin

10

(GHz)

V

CE =

6 V

VCE

= 1

V

9

f = 1 GHz

PRODUCT

8

7

BANDWIDTH

6

5

GAIN,

4

3

T

2

f

1

1

10

100

0.1

1

10

100

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain versus

Figure 4. Gain±Bandwidth Product versus

Collector Current

Collector Current

VCE

VBE

RF

DUT

OUTPUT

Pout

*SLUG TUNER

BIAS NETWORK

*SLUG TUNER

BIAS NETWORK

*MICROLAB/FXR

SF±11N < 1 GHz

SF±31N > 1 GHz

Figure 5. Functional Circuit Schematic

MOTOROLA RF DEVICE DATA	MRF2947AT1,T2 MRF2947RAT1,T2
	3

TYPICAL CHARACTERISTICS

MAXIMUM AVAILABLE GAIN (dB)

MSG, MAXIMUM STABLE GAIN; MAG,

35
												VCE = 1	V
30
												IC = 1 mA
25
20
				MSG
15
10
											MAG
5
0

0.1 1 10 f, FREQUENCY (GHz)

Figure 6. Maximum Stable/Available Gain

versus Frequency

MAXIMUM AVAILABLE GAIN (dB)

MSG, MAXIMUM STABLE GAIN; MAG,

	35
	30	VCE = 6 V
		IC = 5 mA
		MSG
	25
	20
	15
		MAG
	10	MSG
	5
	0

0.1 1 10 f, FREQUENCY (GHz)

Figure 7. Maximum Stable/Available Gain

versus Frequency

,
Umax
FORWARDINSERTION GAIN; G	UNILATERAL GAIN (dB)
MAXIMUM
,
2
21
S

40

35

30

25

20

15

10

5

0

±5

0.1

	GUmax											IC	= 1 mA					40
																,
																Umax
												VCE = 1 V						35
																INSERTIONFORWARDGAIN; G	UNILATERALGAIN (dB)
																		30
																		25
																		20
S	2															MAXIMUM		15
	21																	10
																,		5
																2
																21
																S
																		0
1														10				0.1

f, FREQUENCY (GHz)

Figure 8. Maximum Unilateral Gain and

Forward Insertion Gain versus Frequency

	VCE = 6 V
GUmax	IC = 5 mA

S21 2

1

10

f, FREQUENCY (GHz)

Figure 9. Maximum Unilateral Gain and Forward Insertion Gain versus Frequency

,
Umax
FORWARDINSERTION GAIN; G	UNILATERAL GAIN (dB)
MAXIMUM
,
2
21
S

18

16

14

12

10

8

6

4

0.1

VCE = 1 V

f = 1 GHz

GUmax

S21 2

1

10

100

IC, COLLECTOR CURRENT (mA)

,
Umax
FORWARDINSERTION GAIN; G	UNILATERAL GAIN (dB)
MAXIMUM
,
2
21
S

20
		VCE = 6 V
18
		f = 1 GHz							G	Umax
16
14
										S	2
12											21
10
8
6
4
			1								10									100
0.1

IC, COLLECTOR CURRENT (mA)

Figure 10. Maximum Unilateral Gain and Forward Insertion Gain versus Collector Current

Figure 11. Maximum Unilateral Gain and Forward Insertion Gain versus Collector Current

MRF2947AT1,T2 MRF2947RAT1,T2	MOTOROLA RF DEVICE DATA
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