MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF650/D
The RF Line
NPN Silicon
RF Power Transistor
Designed for 12.5 Volt UHF large±signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
•Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts
Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz
IRL = 10 dB
•Characterized with Series Equivalent Large±Signal Impedance Parameters from 400 to 520 MHz
•Built±In Matching Network for Broadband Operation
•Triple Ion Implanted for More Consistent Characteristics
•Implanted Emitter Ballast Resistors
•Silicon Nitride Passivated
•100% Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc, 2.0 dB Overdrive
•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
MRF650
50 W, 512 MHz RF POWER TRANSISTOR NPN SILICON
CASE 316±01, STYLE 1
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
16.5 |
Vdc |
Collector±Emitter Voltage |
VCES |
38 |
Vdc |
Emitter±Base Voltage |
VEBO |
4.0 |
Vdc |
Collector Current Ð Continuous |
IC |
12 |
Adc |
Total Device Dissipation @ TC = 25°C |
PD |
135 |
Watts |
Derate above 25°C |
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0.77 |
W/°C |
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Storage Temperature Range |
Tstg |
± 65 to +150 |
°C |
Operating Junction Temperature |
TJ |
200 |
°C |
THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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1.3 |
°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
Typ |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) |
V(BR)CEO |
16.5 |
Ð |
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Ð |
Vdc |
Collector±Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) |
V(BR)CES |
38 |
Ð |
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Ð |
Vdc |
Emitter±Base Breakdown Voltage (IE = 10 mAdc, IC = 0) |
V(BR)EBO |
4.0 |
Ð |
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Ð |
Vdc |
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C) |
ICES |
Ð |
Ð |
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5.0 |
mAdc |
ON CHARACTERISTICS |
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DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) |
hFE |
20 |
70 |
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120 |
Ð |
DYNAMIC CHARACTERISTICS |
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Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) |
Cob |
Ð |
135 |
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170 |
pF |
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(continued) |
REV 8 |
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MOTOROLAMotorola, Inc. 1997RF DEVICE DATA |
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MRF650 |
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1 |
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
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Typ |
Max |
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Unit |
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FUNCTIONAL TESTS (In Motorola Test Fixture. See Figure 1.) |
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Common±Emitter Amplifier Power Gain |
Gpe |
5.2 |
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6.1 |
Ð |
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dB |
(VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470 MHz) |
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Common±Emitter Amplifier Power Gain |
Gpe |
5.0 |
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5.9 |
Ð |
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dB |
(VCC = 12.5 Vdc, Pout = 50 W, f = 512 MHz) |
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Input Return Loss |
IRL |
10 |
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15 |
Ð |
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dB |
(VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470, 512 MHz) |
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Collector Efficiency |
h |
55 |
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65 |
Ð |
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% |
(VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470 MHz) |
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Collector Efficiency |
Ð |
50 |
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60 |
Ð |
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% |
(VCC = 12.5 Vdc, Pout = 50 W, f = 512 MHz) |
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Output Mismatch Stress |
y (2) |
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(VCC = 15.5 V, 2.0 dB Overdrive, f = 470 MHz, |
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No Degradation in Output Power |
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VSWR = 20:1, All Phase Angles) (1) |
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NOTES: |
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1.Pin = 2.0 dB above drive requirement for 50 W output at 12.5 Vdc.
2.y = Mismatch stress factor Ð the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in the standard test fixture (Figure 1) terminated in a 20:1 minimum load mismatch at all phase angles.
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R1 |
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R2 |
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D VRE |
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PORT |
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B1 |
B2 |
B3 |
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B6 |
B7 |
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B8 |
+12.5 Vdc |
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SOCKET |
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C1 |
+ |
C2 |
C3 |
B4 |
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B5 |
C6 |
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C7 |
C8 |
+ |
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L1 |
C4 |
C5 |
L2 |
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RF |
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D.U.T. |
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OUTPUT |
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RF INPUT |
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TL7 |
TL8 |
TL9 |
TL10 |
C16 |
TL12 |
50 W |
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50 W |
TL1 |
C9 |
TL3 |
TL4 |
TL5 |
TL6 |
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N2 |
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N1 |
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C12 |
C13 |
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TL2 |
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C10 |
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C11 |
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C14 |
C15 |
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TL11 |
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B1, B8 Ð Ferrite Bead Ferroxcube VK200 20±4B
B2, B3, B4, B5, B6, B7 Ð Ferrite Bead Ferroxcube #56±590±3B
C1, C8 Ð 10 mF, 25 V, 25%, Electrolytic, ECS TE±1204 C2, C7 Ð 1000 pF, Chip Cap, 5%, ATC 100B102JC50
C3, C6 Ð 91 pF, 5%, Mica, SAHA 3HS0006±91
C4, C5, C12, C13 Ð 36 pF, 5%, SAHA 3HS0006±36 C9, C16 Ð 220 pF, Chip Cap, 5%, ATC 100B221JC200
C10, C11, C15 Ð 0.8 ± 10 pF, Variable, Johanson JMC501 PG26J200 C14 Ð 1.0 ± 20 pF, Variable, Johanson JMC5501 PG26J200
L1, L2 Ð 3 Turns, 18 AWG, 0.19 ″ ID Ð Total Length 3.5 ″
N1, N2 Ð N Coaxial Conn., Omni±Spectra 3052±1648±10
R1, R2 Ð 10 Ohm, 10%, 1.0 W, Carbon, RCA 831010
TL1, TL12 Ð Z o = 50 Ohm
TL2 Ð See Photomaster
TL3 Ð See Photomaster
TL4 Ð See Photomaster
TL5 Ð See Photomaster
TL6 Ð See Photomaster
TL7 Ð See Photomaster
TL8 Ð See Photomaster
TL9 Ð See Photomaster
TL10 Ð See Photomaster
TL11 Ð See Photomaster
Transmission Line Boards: 1/16″ Glass±Teflon
Keene GX±0600±55±22
2 oz. Cu Clad Both Sides er = 2.55
Bias Boards: 1/16″ G10 or Equivalent
2 oz. Cu Clad Double Sided
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Figure 1. 440 to 512 MHz Broadband Test Circuit Schematic |
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MRF650 |
MOTOROLA RF DEVICE DATA |
2 |
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