MOTOROLA MPSA43ZL1, MPSA42RLRM, MPSA42RLRP, MPSA42ZL1, MPSA42RLRE Datasheet
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSA42/D
High Voltage Transistors
NPN Silicon
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COLLECTOR |
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3 |
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2 |
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BASE |
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1 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
Symbol |
MPSA42 |
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MPSA43 |
Unit |
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Collector± Emitter Voltage |
VCEO |
300 |
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200 |
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Vdc |
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Collector± Base Voltage |
VCBO |
300 |
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200 |
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Vdc |
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Emitter± Base Voltage |
VEBO |
6.0 |
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6.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
500 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
625 |
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mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
1.5 |
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Watts |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Ambient |
RqJA |
200 |
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°C/mW |
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Thermal Resistance, Junction to Case |
RqJC |
83.3 |
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°C/mW |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
MPSA42* MPSA43
*Motorola Preferred Device
1
2 3
CASE 29±11, STYLE 1 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage(1) |
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V(BR)CEO |
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Vdc |
(IC = 1.0 mAdc, IB = 0) |
MPSA42 |
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300 |
Ð |
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MPSA43 |
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200 |
Ð |
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Collector± Base Breakdown Voltage |
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V(BR)CBO |
300 |
Ð |
Vdc |
(IC = 100 mAdc, IE = 0) |
MPSA42 |
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MPSA43 |
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200 |
Ð |
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Emitter± Base Breakdown Voltage |
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V(BR)EBO |
6.0 |
Ð |
Vdc |
(IE = 100 mAdc, IC = 0) |
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Collector Cutoff Current |
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ICBO |
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μAdc |
(VCB = 200 Vdc, IE = 0) |
MPSA42 |
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Ð |
0.1 |
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(VCB = 160 Vdc, IE = 0) |
MPSA43 |
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Ð |
0.1 |
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Emitter Cutoff Current |
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IEBO |
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μAdc |
(VEB = 6.0 Vdc, IC = 0) |
MPSA42 |
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Ð |
0.1 |
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(VEB = 4.0 Vdc, IC = 0) |
MPSA43 |
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Ð |
0.1 |
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1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
1 |
Motorola, Inc. 1998 |
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MPSA42 MPSA43
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS(1) |
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DC Current Gain |
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hFE |
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Ð |
(IC = 1.0 mAdc, VCE = 10 Vdc) |
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25 |
Ð |
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(IC = 10 mAdc, VCE = 10 Vdc) |
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40 |
Ð |
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(IC = 30 mAdc, VCE = 10 Vdc) |
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40 |
Ð |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
(IC = 20 mAdc, IB = 2.0 mAdc) |
MPSA42 |
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Ð |
0.5 |
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MPSA43 |
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Ð |
0.4 |
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Base±Emitter Saturation Voltage |
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VBE(sat) |
Ð |
0.9 |
Vdc |
(IC = 20 mAdc, IB = 2.0 mAdc) |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
50 |
Ð |
MHz |
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) |
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Collector±Base Capacitance |
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Ccb |
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pF |
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) |
MPSA42 |
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Ð |
3.0 |
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MPSA43 |
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Ð |
4.0 |
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1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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