Motorola MUN5212DW1T1, MUN5213DW1T1, MUN5214DW1T1, MUN5215DW1T1, MUN5216DW1T1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MUN5211DW1T1/D

Dual Bias Resistor Transistors

NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base±emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series, two BRT devices are housed in the SOT±363 package which is ideal for low power surface mount applications where board space is at a premium.

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Available in 8 mm, 7 inch/3000 Unit Tape and Reel.

MUN5211DW1T1

SERIES

Motorola Preferred Devices

6 5

4

1

2

3

CASE 419B±01, STYLE 1

		SOT±363
(3)		(2)	(1)
		R1	R2
Q1
			Q2
	R2	R1
(4)		(5)	(6)

MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2)

		Rating		Symbol			Value		Unit
Collector-Base Voltage				VCBO		50			Vdc
Collector-Emitter Voltage				VCEO		50			Vdc
Collector Current				IC		100			mAdc
THERMAL CHARACTERISTICS
Thermal Resistance Ð Junction-to-Ambient (surface mounted)				RθJA		833			°C/W
Operating and Storage Temperature Range				TJ, Tstg		± 65 to +150			°C
Total Package Dissipation @ T	= 25°C(1)			P	D	150			mW
A
DEVICE MARKING AND RESISTOR VALUES: MUN5211DW1T1 SERIES
Device		Marking		R1 (K)				R2 (K)
MUN5211DW1T1		7A		10				10
MUN5212DW1T1		7B		22				22
MUN5213DW1T1		7C		47				47
MUN5214DW1T1		7D		10				47
MUN5215DW1T1(2)		7E		10					∞
MUN5216DW1T1(2)		7F		4.7					∞
MUN5230DW1T1(2)		7G		1.0				1.0
MUN5231DW1T1(2)		7H		2.2				2.2
MUN5232DW1T1(2)		7J		4.7				4.7
MUN5233DW1T1(2)		7K		4.7				47
MUN5234DW1T1(2)		7L		22				47
MUN5235DW1T1(2)		7M		2.2				47

1.Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

2.New resistor combinations. Updated curves to follow in subsequent data sheets.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

	Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1996

MUN5211DW1T1 SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)		ICBO	Ð	Ð	100	nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)		ICEO	Ð	Ð	500	nAdc
Emitter-Base Cutoff Current	MUN5211DW1T1	IEBO	Ð	Ð	0.5	mAdc
(VEB = 6.0 V, IC = 0)	MUN5212DW1T1		Ð	Ð	0.2
	MUN5213DW1T1		Ð	Ð	0.1
	MUN5214DW1T1		Ð	Ð	0.2
	MUN5215DW1T1		Ð	Ð	0.9
	MUN5216DW1T1		Ð	Ð	1.9
	MUN5230DW1T1		Ð	Ð	4.3
	MUN5231DW1T1		Ð	Ð	2.3
	MUN5232DW1T1		Ð	Ð	1.5
	MUN5233DW1T1		Ð	Ð	0.18
	MUN5234DW1T1		Ð	Ð	0.13
	MUN5235DW1T1		Ð	Ð	0.2
Collector-Base Breakdown Voltage (IC = 10 μA, IE = 0)		V(BR)CBO	50	Ð	Ð	Vdc
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)		V(BR)CEO	50	Ð	Ð	Vdc
ON CHARACTERISTICS(3)
DC Current Gain	MUN5211DW1T1	hFE	35	60	Ð
(VCE = 10 V, IC = 5.0 mA)	MUN5212DW1T1		60	100	Ð
	MUN5213DW1T1		80	140	Ð
	MUN5214DW1T1		80	140	Ð
	MUN5215DW1T1		160	350	Ð
	MUN5216DW1T1		160	350	Ð
	MUN5230DW1T1		3.0	5.0	Ð
	MUN5231DW1T1		8.0	15	Ð
	MUN5232DW1T1		15	30	Ð
	MUN5233DW1T1		80	200	Ð
	MUN5234DW1T1		80	150	Ð
	MUN5235DW1T1		80	140	Ð
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)		VCE(sat)	Ð	Ð	0.25	Vdc
(IC = 10 mA, IB = 5 mA) MUN5230DW1T1/MUN5231DW1T1
(IC = 10 mA, IB = 1 mA) MUN5215DW1T1/MUN5216DW1T1
MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
Output Voltage (on)		VOL				Vdc
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)	MUN5211lDW1T1		Ð	Ð	0.2
	MUN5212DW1T1		Ð	Ð	0.2
	MUN5214DW1T1		Ð	Ð	0.2
	MUN5215DW1T1		Ð	Ð	0.2
	MUN5216DW1T1		Ð	Ð	0.2
	MUN5230DW1T1		Ð	Ð	0.2
	MUN5231DW1T1		Ð	Ð	0.2
	MUN5232DW1T1		Ð	Ð	0.2
	MUN5233DW1T1		Ð	Ð	0.2
	MUN5234DW1T1		Ð	Ð	0.2
	MUN5235DW1T1		Ð	Ð	0.2
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)	MUN5213DW1T1		Ð	Ð	0.2

3. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

				MUN5211DW1T1				SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic		Symbol	Min	Typ		Max		Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)		VOH	4.9	Ð		Ð		Vdc
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ)	MUN5230DW1T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)	MUN5215DW1T1
	MUN5216DW1T1
	MUN5233DW1T1
Input Resistor	MUN5211DW1T1	R1	7.0	10		13		k Ω
	MUN5212DW1T1		15.4	22		28.6
	MUN5213DW1T1		32.9	47		61.1
	MUN5214DW1T1		7.0	10		13
	MUN5215DW1T1		7.0	10		13
	MUN5216DW1T1		3.3	4.7		6.1
	MUN5230DW1T1		0.7	1.0		1.3
	MUN5231DW1T1		1.5	2.2		2.9
	MUN5232DW1T1		3.3	4.7		6.1
	MUN5233DW1T1		3.3	4.7		6.1
	MUN5234DW1T1		15.4	22		28.6
	MUN5235DW1T1		1.54	2.2		2.86
Resistor Ratio MUN5211DW1T1/MUN5212DW1T1/MUN5213DW1T1		R1/R2	0.8	1.0		1.2
MUN5214DW1T1			0.17	0.21		0.25
MUN5215DW1T1/MUN5216DW1T1			Ð	Ð		Ð
MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1			0.8	1.0		1.2
MUN5233DW1T1			0.055	0.1		0.185
MUN5234DW1T1			0.38	0.47		0.56
MUN5235DW1T1			0.038	0.047		0.056

	250
(MILLIWATTS)	200
DISSIPATION	150
	100
, POWER	50		RθJA = 833°C/W
D
P
	0	0	50	100	150
	± 50
		TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3