MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSA62/D
Darlington Transistors |
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MPSA62 |
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PNP Silicon |
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thru |
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COLLECTOR 3 |
MPSA64* |
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BASE |
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MPSA55, MPSA56 |
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2 |
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For Specifications, |
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See MPSA05, MPSA06 Data |
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*Motorola Preferred Device |
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EMITTER 1 |
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MAXIMUM RATINGS
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MPSA63 |
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Rating |
Symbol |
MPSA62 |
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MPSA64 |
Unit |
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Collector± Emitter Voltage |
VCES |
±20 |
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±30 |
Vdc |
Collector± Base Voltage |
VCBO |
±20 |
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±30 |
Vdc |
Emitter± Base Voltage |
VEBO |
±10 |
Vdc |
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Collector Current Ð Continuous |
IC |
±500 |
mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
625 |
mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TA = 25°C |
PD |
1.5 |
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Watts |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Ambient |
RqJA |
200 |
°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
83.3 |
°C/W |
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
1
2 3
CASE 29±04, STYLE 1 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage |
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V(BR)CES |
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Vdc |
(IC = ±100 μAdc, VBE = 0) |
MPSA62 |
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±20 |
Ð |
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MPSA63, MPSA64 |
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±30 |
Ð |
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Collector Cutoff Current |
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ICBO |
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nAdc |
(VCB= ±15 Vdc, IE = 0) |
MPSA62 |
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Ð |
±100 |
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(VCB = ±30 Vdc, IE = 0) |
MPSA63, MPSA64 |
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Ð |
±100 |
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Emitter Cutoff Current |
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IEBO |
Ð |
±100 |
nAdc |
(VEB = ±10 Vdc, IC = 0) |
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Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
MPSA62 thru MPSA64
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS(1) |
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DC Current Gain |
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hFE |
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Ð |
(IC = ±10 mAdc, VCE = ±5.0 Vdc) |
MPSA63 |
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5,000 |
Ð |
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MPSA64 |
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10,000 |
Ð |
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MPSA62 |
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20,000 |
Ð |
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(IC = ±100 mAdc, VCE = ±5.0 Vdc) |
MPSA63 |
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10,000 |
Ð |
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MPSA64 |
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20,000 |
Ð |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
(IC = ±10 mAdc, IB = ±0.01 mAdc) |
MPSA62 |
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Ð |
±1.0 |
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(IC = ±100 mAdc, IB = ±0.1 mAdc) |
MPSA63, MPSA64 |
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Ð |
±1.5 |
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Base ± Emitter On Voltage |
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VBE(on) |
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Vdc |
(IC = ±10 mAdc, VCE = ±5.0 Vdc) |
MPSA62 |
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Ð |
±1.4 |
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(IC = ±100 mAdc, VCE = ±5.0 Vdc) |
MPSA63, MPSA64 |
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Ð |
±2.0 |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product (2) |
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f |
125 |
Ð |
MHz |
(IC = ±100 mAdc, VCE = ±5.0 Vdc, f = 100 MHz) |
MPSA63, MPSA64 |
T |
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1.Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
2.fT = |hfe| S ftest.
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |