Motorola MPS8099RLRM, MPS8098RLRA, MPS8099, MPS8099RLRA, MPS8599 Datasheet
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS8098/D
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COLLECTOR |
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COLLECTOR |
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3 |
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3 |
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2 |
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BASE |
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BASE |
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NPN |
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PNP |
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1 |
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1 |
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EMITTER |
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EMITTER |
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MAXIMUM RATINGS |
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MPS8098 |
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MPS8099 |
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Rating |
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Symbol |
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MPS8598 |
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MPS8599 |
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Unit |
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Collector± Emitter Voltage |
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VCEO |
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60 |
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80 |
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Vdc |
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Collector± Base Voltage |
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VCBO |
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60 |
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80 |
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Vdc |
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MPS8598 |
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MPS8099 |
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MPS8599 |
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Emitter± Base Voltage |
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VEBO |
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6.0 |
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5.0 |
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Vdc |
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Collector Current ± Continuous |
IC |
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500 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
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625 |
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mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
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1.5 |
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Watts |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
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± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
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RqJA |
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200 |
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°C/W |
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Thermal Resistance, Junction to Case |
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RqJC |
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83.3 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
NPN
MPS8098 MPS8099* PNP MPS8598 MPS8599*
Voltage and current are negative for PNP transistors
*Motorola Preferred Device
1
2 3
CASE 29±04, STYLE 1
TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage(1) |
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V(BR)CEO |
60 |
Ð |
Vdc |
(IC = 10 mAdc, IB = 0) |
MPS8098, MPS8598 |
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MPS8099, MPS8599 |
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80 |
Ð |
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Collector± Base Breakdown Voltage |
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V(BR)CBO |
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Vdc |
(IC = 100 μAdc, IE = 0) |
MPS8098, MPS8598 |
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60 |
Ð |
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MPS8099, MPS8599 |
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80 |
Ð |
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Emitter± Base Breakdown Voltage |
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V(BR)EBO |
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Vdc |
(IE = 10 μAdc, IC = 0) |
MPS8098, MPS8099 |
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6.0 |
Ð |
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MPS8598, MPS8599 |
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5.0 |
Ð |
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Collector Cutoff Current |
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ICES |
Ð |
0.1 |
μAdc |
(VCE = 60 Vdc, IB = 0) |
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Collector Cutoff Current |
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ICBO |
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μAdc |
(VCB = 60 Vdc, IE = 0) |
MPS8098, MPS8598 |
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Ð |
0.1 |
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(VCB = 80 Vdc, IE = 0) |
MPS8099, MPS8599 |
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Ð |
0.1 |
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Emitter Cutoff Current |
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IEBO |
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μAdc |
(VEB = 6.0 Vdc, IC = 0) |
MPS8098, MPS8099 |
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Ð |
0.1 |
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(VEB = 4.0 Vdc, IC = 0) |
MPS8598, MPS8599 |
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Ð |
0.1 |
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1. Pulse Test: Pulse Width v 300 ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
NPN MPS8098 MPS8099 PNP MPS8598 MPS8599
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS(1) |
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DC Current Gain |
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hFE |
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Ð |
(IC = 1.0 mAdc, VCE = 5.0 Vdc) |
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100 |
300 |
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(IC = 10 mAdc, VCE = 5.0 Vdc) |
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100 |
Ð |
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(IC = 100 mAdc, VCE = 5.0 Vdc) |
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75 |
Ð |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
(IC = 100 mAdc, IB = 5.0 mAdc) |
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0.4 |
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(IC = 100 mAdc, IB = 10 mAdc) |
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0.3 |
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Base±Emitter On Voltage |
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VBE(on) |
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Vdc |
(IC = 1.0 mAdc, VCE = 5.0 Vdc) |
MPS8098, MPS8598 |
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0.5 |
0.7 |
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(IC = 10 mAdc, VCE = 5.0 Vdc) |
MPS8099, MPS8599 |
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0.6 |
0.8 |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
150 |
Ð |
MHz |
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) |
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Output Capacitance |
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Cobo |
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pF |
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) |
MPS8098, MPS8099 |
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Ð |
6.0 |
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MPS8598, MPS8599 |
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Ð |
8.0 |
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Input Capacitance |
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Cibo |
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pF |
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) |
MPS8098, MPS8099 |
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Ð |
25 |
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MPS8598, MPS8599 |
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Ð |
30 |
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1. Pulse Test: Pulse Width v 300 ms, Duty Cycle = 2.0%.
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TURN±ON TIME |
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TURN±OFF TIME |
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±1.0 V |
VCC |
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+VBB |
VCC |
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+40 V |
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+40 V |
5.0 ms |
100 |
RL |
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100 |
RL |
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+10 V |
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OUTPUT |
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OUTPUT |
Vin |
RB |
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Vin |
RB |
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0 |
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tr = 3.0 ns |
5.0 mF |
* CS t 6.0 pF |
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5.0 mF |
* CS t 6.0 pF |
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100 |
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100 |
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5.0 ms |
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tr = 3.0 ns |
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*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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