MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSH10/D
VHF/UHF |
Transistors |
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NPN Silicon |
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COLLECTOR |
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3 |
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1 |
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BASE |
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2 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
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Symbol |
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Value |
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Unit |
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Collector± Emitter Voltage |
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VCEO |
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25 |
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Vdc |
Collector± Base Voltage |
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VCBO |
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30 |
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Vdc |
Emitter± Base Voltage |
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VEBO |
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3.0 |
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Vdc |
Total Device Dissipation @ TA = 25°C |
PD |
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350 |
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mW |
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Derate above 25°C |
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2.8 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
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1.0 |
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Watts |
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Derate above 25°C |
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8.0 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
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± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
RqJA |
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357 |
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°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
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125 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
MPSH10
MPSH11
Motorola Preferred Devices
1
2 3
CASE 29±04, STYLE 2 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector± Emitter Breakdown Voltage |
V(BR)CEO |
25 |
Ð |
Vdc |
(IC = 1.0 mAdc, IB = 0) |
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Collector± Base Breakdown Voltage |
V(BR)CBO |
30 |
Ð |
Vdc |
(IC = 100 mAdc, IE = 0) |
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Emitter± Base Breakdown Voltage |
V(BR)EBO |
3.0 |
Ð |
Vdc |
(IE = 10 mAdc, IC = 0) |
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Collector Cutoff Current |
ICBO |
Ð |
100 |
nAdc |
(VCB = 25 Vdc, IE = 0) |
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Emitter Cutoff Current |
IEBO |
Ð |
100 |
nAdc |
(VEB = 2.0 Vdc, IC = 0) |
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Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
MPSH10 MPSH11
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
60 |
Ð |
Ð |
(IC = 4.0 mAdc, VCE = 10 Vdc) |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
Ð |
0.5 |
Vdc |
(IC = 4.0 mAdc, IB = 0.4 mAdc) |
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Base ± Emitter On Voltage |
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VBE(on) |
Ð |
0.95 |
Vdc |
(IC = 4.0 mAdc, VCE = 10 Vdc) |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
650 |
Ð |
MHz |
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) |
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Collector±Base Capacitance |
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Ccb |
Ð |
0.7 |
pF |
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
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Common±Base Feedback Capacitance |
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Crb |
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pF |
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
MPSH10 |
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0.35 |
0.65 |
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MPSH11 |
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0.6 |
0.9 |
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Collector Base Time Constant |
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rb'Cc |
Ð |
9.0 |
ps |
(IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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