Motorola MUN2111T1, MUN2112T1, MUN2113T1, MUN2114T1, MUN2115T1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MUN2111T1/D

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base±emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC±59 package which is designed for low power surface mount applications.

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•The SC±59 package can be soldered using wave or reflow. The modified gull±winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.

•Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel.

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

R1

PIN2 R2 BASE

(INPUT)

PIN3 COLLECTOR (OUTPUT)

PIN1 EMITTER (GROUND)

MUN2111T1

SERIES

Motorola Preferred Devices

PNP SILICON

BIAS RESISTOR

TRANSISTOR

3

2

1

CASE 318D±03, STYLE 1 (SC±59)

Rating	Symbol		Value	Unit
Collector±Base Voltage	VCBO		50	Vdc
Collector±Emitter Voltage	VCEO		50	Vdc
Collector Current	IC		100	mAdc
Total Power Dissipation @ T = 25°C(1)	P	D	200	mW
A
Derate above 25°C			1.6	mW/°C

THERMAL CHARACTERISTICS

Thermal Resistance Ð Junction±to±Ambient (surface mounted)	RθJA	625	°C/W
Operating and Storage Temperature Range	TJ, Tstg	± 65 to +150	°C
Maximum Temperature for Soldering Purposes,	TL	260	°C
Time in Solder Bath		10	Sec

DEVICE MARKING AND RESISTOR VALUES

Device	Marking	R1 (K)	R2 (K)
MUN2111T1	6A	10	10
MUN2112T1	6B	22	22
MUN2113T1	6C	47	47
MUN2114T1	6D	10	47
MUN2115T1(2)	6E	10	∞
MUN2116T1(2)	6F	4.7	∞
MUN2130T1(2)	6G	1.0	1.0
MUN2131T1(2)	6H	2.2	2.2
MUN2132T1(2)	6J	4.7	4.7
MUN2133T1(2)	6K	4.7	47
MUN2134T1(2)	6L	22	47

1.Device mounted on a FR±4 glass epoxy printed circuit board using the minimum recommended footprint.

2.New devices. Updated curves to follow in subsequent data sheets.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 5

	Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1996

MUN2111T1 SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Base Cutoff Current (VCB = 50 V, IE = 0)		ICBO	Ð	Ð	100	nAdc
Collector±Emitter Cutoff Current (VCE = 50 V, IB = 0)		ICEO	Ð	Ð	500	nAdc
Emitter±Base Cutoff Current	MUN2111T1	IEBO	Ð	Ð	0.5	mAdc
(VEB = 6.0 V, IC = 0)	MUN2112T1		Ð	Ð	0.2
	MUN2113T1		Ð	Ð	0.1
	MUN2114T1		Ð	Ð	0.2
	MUN2115T1		Ð	Ð	0.9
	MUN2116T1		Ð	Ð	1.9
	MUN2130T1		Ð	Ð	4.3
	MUN2131T1		Ð	Ð	2.3
	MUN2132T1		Ð	Ð	1.5
	MUN2133T1		Ð	Ð	0.18
	MUN2134T1		Ð	Ð	0.13
Collector±Base Breakdown Voltage (IC = 10 μA, IE = 0)		V(BR)CBO	50	Ð	Ð	Vdc
Collector±Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)		V(BR)CEO	50	Ð	Ð	Vdc
ON CHARACTERISTICS(3)
DC Current Gain	MUN2111T1	hFE	35	60	Ð
(VCE = 10 V, IC = 5.0 mA)	MUN2112T1		60	100	Ð
	MUN2113T1		80	140	Ð
	MUN2114T1		80	140	Ð
	MUN2115T1		160	250	Ð
	MUN2116T1		160	250	Ð
	MUN2130T1		3.0	5.0	Ð
	MUN2131T1		8.0	15	Ð
	MUN2132T1		15	27	Ð
	MUN2133T1		80	140	Ð
	MUN2134T1		80	130	Ð
Collector±Emitter Saturation Voltage		VCE(sat)				Vdc
(IC = 10 mA, IB = 0.3 mA)	MUN2111T1		Ð	Ð	0.25
	MUN2112T1		Ð	Ð	0.25
	MUN2113T1		Ð	Ð	0.25
	MUN2114T1		Ð	Ð	0.25
	MUN2115T1		Ð	Ð	0.25
	MUN2130T1		Ð	Ð	0.25
(IC = 10 mA, IB = 5.0 mA)	MUN2131T1		Ð	Ð	0.25
(IC = 10 mA, IB = 1.0 mA)	MUN2116T1		Ð	Ð	0.25
	MUN2132T1		Ð	Ð	0.25
	MUN2134T1		Ð	Ð	0.25
Output Voltage (on)		VOL				Vdc
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)	MUN2111T1		Ð	Ð	0.2
	MUN2112T1		Ð	Ð	0.2
	MUN2114T1		Ð	Ð	0.2
	MUN2115T1		Ð	Ð	0.2
	MUN2116T1		Ð	Ð	0.2
	MUN2130T1		Ð	Ð	0.2
	MUN2131T1		Ð	Ð	0.2
	MUN2132T1		Ð	Ð	0.2
	MUN2133T1		Ð	Ð	0.2
	MUN2134T1		Ð	Ð	0.2
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)	MUN2113T1		Ð	Ð	0.2

3. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

						MUN2111T1		SERIES
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25°C unless otherwise noted)
	Characteristic		Symbol	Min	Typ	Max		Unit
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)			VOH	4.9	Ð	Ð		Vdc
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ)		MUN2130T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)		MUN2115T1
		MUN2116T1
		MUN2131T1
		MUN2132T1
Input Resistor		MUN2111T1	R1	7.0	10	13		k Ω
		MUN2112T1		15.4	22	28.6
		MUN2113T1		32.9	47	61.1
		MUN2114T1		7.0	10	13
		MUN2115T1		7.0	10	13
		MUN2116T1		3.3	4.7	6.1
		MUN2130T1		0.7	1.0	1.3
		MUN2131T1		1.5	2.2	2.9
		MUN2132T1		3.3	4.7	6.1
		MUN2133T1		3.3	4.7	6.1
		MUN2134T1		15.4	22	28.6
Resistor Ratio	MUN2111T1/MUN2112T1/MUN2113T1		R1/R2	0.8	1.0	1.2
	MUN2114T1			0.17	0.21	0.25
	MUN2115T1/MUN2116T1			Ð	Ð	Ð
	MUN2130T1/MUN2131T1/MUN2132T1			0.8	1.0	1.2
	MUN2133T1			0.055	0.1	0.185
	MUN2134T1			0.38	0.47	0.56

	250
(MILLIWATTS)	200
DISSIPATION	150
	100
, POWER	50		RθJA = 625°C/W
D
P
	0	0	50	100	150
	± 50
		TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3