MOTOROLA MPS2907ARLRM, MPS2907ARLRP, MPS2907AZL1, MPS2907ARL, MPS2907ARL1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MPS2907/D

General Purpose Transistors

PNP Silicon

					COLLECTOR
			3
			2
			BASE
			1
						EMITTER
MAXIMUM RATINGS
Rating	Symbol	MPS2907		MPS2907A					Unit
Collector± Emitter Voltage	VCEO	±40		±60					Vdc
Collector± Base Voltage	VCBO		±60						Vdc
Emitter± Base Voltage	VEBO		±5.0						Vdc
Collector Current Ð Continuous	IC	±600							mAdc
Total Device Dissipation	PD
@ TA = 25°C			625						mW
Derate above 25°C			5.0						mW/°C
Total Device Dissipation	PD
@ TC = 25°C			1.5						Watts
Derate above 25°C			12						mW/°C
Operating and Storage Junction	TJ, Tstg	± 500 to +150							°C
Temperature Range
THERMAL CHARACTERISTICS

MPS2907 MPS2907A*

*Motorola Preferred Device

1

2 3

CASE 29±04, STYLE 1

TO±92 (TO±226AA)

Characteristic	Symbol		Max	Unit
Thermal Resistance, Junction to Ambient	RqJA		200	°C/W
Thermal Resistance, Junction to Case	RqJC		83.3	°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic						Symbol	Min	Max	Unit
OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage(1)	MPS2907					V(BR)CEO	±40	Ð	Vdc
(IC = ±10 mAdc, IB = 0)	MPS2907A						±60	Ð
Collector± Base Breakdown Voltage						V(BR)CBO	±60	Ð	Vdc
(IC = ±10 mAdc, IE = 0)
Emitter± Base Breakdown Voltage						V(BR)EBO	±5.0	Ð	Vdc
(IE = ±10 mAdc, IC = 0)
Collector Cutoff Current						ICEX	Ð	±50	nAdc
(VCE = ±30 Vdc, VEB(off) = ±0.5 Vdc)
Collector Cutoff Current						ICBO			μAdc
(VCB = ±50 Vdc, IE = 0)	MPS2907						Ð	±0.02
	MPS2907A						Ð	±0.01
(VCB = ±50 Vdc, IE = 0, TA = 150°C)	MPS2907						Ð	±20
	MPS2907A						Ð	±10
Base Current						IB	Ð	±50	nAdc
(VCE = ±30 Vdc, VEB(off) = ±0.5 Vdc)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1996

MPS2907	MPS2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
		Characteristic		Symbol	Min	Max	Unit
ON CHARACTERISTICS
DC Current Gain				hFE			Ð
(IC = ±0.1 mAdc, VCE = ±10 Vdc)			MPS2907		35	Ð
			MPS2907A		75	Ð
(IC = ±1.0 mAdc, VCE = ±10 Vdc)			MPS2907		50	Ð
			MPS2907A		100	Ð
(IC = ±10 mAdc, VCE = ±10 Vdc)			MPS2907		75	Ð
(IC = ±150 mAdc, VCE = ±10 Vdc)(1)			MPS2907A		100	Ð
			MPS2907, MPS2907A		100	300
(IC = ±500 mAdc, VCE = ±10 Vdc)(1)			MPS2907		30	Ð
			MPS2907A		50	Ð
Collector± Emitter Saturation Voltage(1)				VCE(sat)	Ð	±0.4	Vdc
(IC = ±150 mAdc, IB = ±15 mAdc)
(IC = ±500 mAdc, IB = ±50 mAdc)					Ð	±1.6
Base ± Emitter Saturation Voltage(1)				VBE(sat)	Ð	±1.3	Vdc
(IC = ±150 mAdc, IB = ±15 mAdc)
(IC = ±500 mAdc, IB = ±50 mAdc)					Ð	±2.6
SMALL± SIGNAL CHARACTERISTICS
Current± Gain Ð Bandwidth Product (1), (2)				f	200	Ð	MHz
(IC = ±50 mAdc, VCE = ±20 Vdc, f = 100 MHz)				T
Output Capacitance				Cobo	Ð	8.0	pF
(VCB = ±10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance				Cibo	Ð	30	pF
(VEB = ±2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn±On Time		(VCC = ±30 Vdc, IC = ±150 mAdc,		ton	Ð	45	ns
		IB1 = ±15 mAdc) (Figures 1 and 5)
Delay Time				td	Ð	10	ns
Rise Time				tr	Ð	40	ns
Turn±Off Time		(VCC = ±6.0 Vdc, IC = ±150 mAdc,		toff	Ð	100	ns
		IB1 = IB2 = 15 mAdc) (Figure 2)
Storage Time				ts	Ð	80	ns
Fall Time				tf	Ð	30	ns

1.Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2.fT is defined as the frequency at which |hfe| extrapolates to unity.

INPUT

Zo = 50 Ω

PRF = 150 PPS

RISE TIME ≤ 2.0 ns

P.W. < 200 ns

1.0 k

0
±16 V	50
	200 ns

±30 V 200

TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns

INPUT
Zo = 50 Ω		+15 V	±6.0 V
PRF = 150 PPS
RISE TIME ≤ 2.0 ns		1.0 k		37
P.W. < 200 ns
0	1.0 k			TO OSCILLOSCOPE
				RISE TIME ≤ 5.0 ns
±30 V	50	1N916
200 ns

Figure 1. Delay and Rise Time Test Circuit

Figure 2. Storage and Fall Time Test Circuit

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data