Motorola MUN5111DW1T1, MUN5112DW1T1, MUN5133DW1T1, MUN5134DW1T1, MUN5135DW1T1 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MUN5111DW1T1/D

Dual Bias Resistor Transistors

PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base±emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT±363 package which is ideal for low±power surface mount applications where board space is at a premium.

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Available in 8 mm, 7 inch/3000 Unit Tape and Reel.

MUN5111DW1T1

SERIES

Motorola Preferred Devices

6 5

4

1

2 3

CASE 419B±01, STYLE 1

		SOT±363
(3)		(2)	(1)
		R1	R2
Q1
			Q2
	R2	R1
(4)		(5)	(6)

MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2)

		Rating		Symbol		Value		Unit
Collector±Base Voltage				VCBO	± 50			Vdc
Collector±Emitter Voltage				VCEO	±50			Vdc
Collector Current				IC	±100			mAdc
THERMAL CHARACTERISTICS
Thermal Resistance Ð Junction±to±Ambient (surface mounted)				RθJA	833			°C/W
Operating and Storage Temperature Range				TJ, Tstg	± 65 to +150			°C
Total Package Dissipation @ T	= 25°C(1)			P	150			mW
A				D
DEVICE MARKING AND RESISTOR VALUES: MUN5111DW1T1 SERIES
Device		Marking		R1 (K)			R2 (K)
MUN5111DW1T1		0A		10			10
MUN5112DW1T1		0B		22			22
MUN5113DW1T1		0C		47			47
MUN5114DW1T1		0D		10			47
MUN5115DW1T1(2)		0E		10				∞
MUN5116DW1T1(2)		0F		4.7				∞
MUN5130DW1T1(2)		0G		1.0			1.0
MUN5131DW1T1(2)		0H		2.2			2.2
MUN5132DW1T1(2)		0J		4.7			4.7
MUN5133DW1T1(2)		0K		4.7			47
MUN5134DW1T1(2)		0L		22			47
MUN5135DW1T1(2)		0M		2.2			47

1.Device mounted on a FR±4 glass epoxy printed circuit board using the minimum recommended footprint.

2.New resistor combinations. Updated curves to follow in subsequent data sheets.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

	Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1997

MUN5111DW1T1 SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Base Cutoff Current (VCB = ±50 V, IE = 0)		ICBO	Ð	Ð	±100	nAdc
Collector±Emitter Cutoff Current (VCE = ± 50 V, IB = 0)		ICEO	Ð	Ð	±500	nAdc
Emitter±Base Cutoff Current	MUN5111DW1T1	IEBO	Ð	Ð	±0.5	mAdc
(VEB = ± 6.0 V, IC = 0)	MUN5112DW1T1		Ð	Ð	±0.2
	MUN5113DW1T1		Ð	Ð	±0.1
	MUN5114DW1T1		Ð	Ð	±0.2
	MUN5115DW1T1		Ð	Ð	±0.9
	MUN5116DW1T1		Ð	Ð	±1.9
	MUN5130DW1T1		Ð	Ð	±4.3
	MUN5131DW1T1		Ð	Ð	±2.3
	MUN5132DW1T1		Ð	Ð	±1.5
	MUN5133DW1T1		Ð	Ð	±0.18
	MUN5134DW1T1		Ð	Ð	±0.13
	MUN5135DW1T1		Ð	Ð	±0.2
Collector±Base Breakdown Voltage (IC = ±10 μA, IE = 0)		V(BR)CBO	± 50	Ð	Ð	Vdc
Collector±Emitter Breakdown Voltage(3) (IC = ± 2.0 mA, IB = 0)		V(BR)CEO	±50	Ð	Ð	Vdc
ON CHARACTERISTICS(3)
DC Current Gain	MUN5111DW1T1	hFE	35	60	Ð
(VCE = ±10 V, IC = ± 5.0 mA)	MUN5112DW1T1		60	100	Ð
	MUN5113DW1T1		80	140	Ð
	MUN5114DW1T1		80	140	Ð
	MUN5115DW1T1		160	250	Ð
	MUN5116DW1T1		160	250	Ð
	MUN5130DW1T1		3.0	5.0	Ð
	MUN5131DW1T1		8.0	15	Ð
	MUN5132DW1T1		15	27	Ð
	MUN5133DW1T1		80	140	Ð
	MUN5134DW1T1		80	130	Ð
	MUN5135DW1T1		80	140	Ð
Collector±Emitter Saturation Voltage (IC = ±10 mA, IE = ±0.3 mA)		VCE(sat)	Ð	Ð	± 0.25	Vdc
(IC = ±10 mA, IB = ± 5 mA) MUN5130DW1T1/MUN5131DW1T1
(IC = ±10 mA, IB = ±1 mA) MUN5115DW1T1/MUN5116DW1T1/
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
Output Voltage (on)		VOL				Vdc
(VCC = ±5.0 V, VB = ±2.5 V, RL = 1.0 kΩ)	MUN5111DW1T1		Ð	Ð	±0.2
	MUN5112DW1T1		Ð	Ð	±0.2
	MUN5114DW1T1		Ð	Ð	±0.2
	MUN5115DW1T1		Ð	Ð	±0.2
	MUN5116DW1T1		Ð	Ð	±0.2
	MUN5130DW1T1		Ð	Ð	±0.2
	MUN5131DW1T1		Ð	Ð	±0.2
	MUN5132DW1T1		Ð	Ð	±0.2
	MUN5133DW1T1		Ð	Ð	±0.2
	MUN5134DW1T1		Ð	Ð	±0.2
	MUN5135DW1T1		Ð	Ð	±0.2
(VCC = ±5.0 V, VB = ± 3.5 V, RL = 1.0 kΩ)	MUN5113DW1T1		Ð	Ð	±0.2

3. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

				MUN5111DW1T1				SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic		Symbol	Min	Typ		Max		Unit
Output Voltage (off) (VCC = ±5.0 V, VB = ±0.5 V, RL = 1.0 kΩ)		VOH	± 4.9	Ð		Ð		Vdc
(VCC = ±5.0 V, VB = ±0.050 V, RL = 1.0 kΩ) MUN5130DW1T1
(VCC = ±5.0 V, VB = ± 0.25 V, RL = 1.0 kΩ)	MUN5115DW1T1
	MUN5116DW1T1
	MUN5131DW1T1
	MUN5132DW1T1
Input Resistor	MUN5111DW1T1	R1	7.0	10		13		kΩ
	MUN5112DW1T1		15.4	22		28.6
	MUN5113DW1T1		32.9	47		61.1
	MUN5114DW1T1		7.0	10		13
	MUN5115DW1T1		7.0	10		13
	MUN5116DW1T1		3.3	4.7		6.1
	MUN5130DW1T1		0.7	1.0		1.3
	MUN5131DW1T1		1.5	2.2		2.9
	MUN5132DW1T1		3.3	4.7		6.1
	MUN5133DW1T1		3.3	4.7		6.1
	MUN5134DW1T1		15.4	22		28.6
	MUN5135DW1T1		1.54	2.2		2.86
Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/MUN5113DW1T1		R1/R2	0.8	1.0		1.2
MUN5114DW1T1			0.17	0.21		0.25
MUN5115DW1T1/MUN5116DW1T1			Ð	Ð		Ð
MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1			0.8	1.0		1.2
MUN5133DW1T1			0.055	0.1		0.185
MUN5134DW1T1			0.38	0.47		0.56
MUN5135DW1T1			0.038	0.047		0.056

	250
(MILLIWATTS)	200
DISSIPATION	150
	100
, POWER	50		RθJA = 833°C/W
D
P
	0	0	50	100	150
	± 50
		TA, AMBIENT TEMPERATURE (°C)

Figure 1. Derating Curve

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3

MUN5111DW1T1 SERIES

TYPICAL ELECTRICAL CHARACTERISTICS Ð MUN5111DW1T1

MAXIMUM COLLECTOR VOLTAGE(VOLTS)	1				1000
		IC/IB = 10
		TA = ±25°C
	0.1			25°C	100
		75°C
				(NORMALIZED), DCCURRENTGAIN
,				FE
CE(sat)	0.01	20	40	h	10
V	0			50
		IC, COLLECTOR CURRENT (mA)

		VCE = 10 V
		TA = 75°C
		25°C
		±25°C
1	10	100

IC, COLLECTOR CURRENT (mA)

		Figure 2. VCE(sat) versus IC									Figure 3. DC Current Gain
	4							100		75°C		25°C
					f = 1 MHz
					lE = 0 V			10				°
CAPACITANCE(pF)	3				TA = 25°C		CURRENT (mA)				TA = ±25 C
								0.1
								1
	2						COLLECTOR
C
,
ob	1
							,
							C	0.01							VO = 5 V
							I
	0	10	20	30	40	50		0.001	1	2	3	4	5	6	7	8	9	10
	0							0
		VR, REVERSE BIAS VOLTAGE (VOLTS)									Vin, INPUT VOLTAGE (VOLTS)

Figure 4. Output Capacitance

Figure 5. Output Current versus Input Voltage

	100
		VO = 0.2 V
(VOLTS)	10			TA = ±25°C
INPUT VOLTAGE
					25°C
				75°C
	1
,
in
V
	0.1	10	20	30	40	50
	0
			IC, COLLECTOR CURRENT (mA)

Figure 6. Input Voltage versus Output Current

4	Motorola Small±Signal Transistors, FETs and Diodes Device Data