Motorola MCM44H64BSG17, MCM44G64BSG12, MCM44G64BSG17, MCM44H64BSG12, MCM44H64BSG15 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MCM4464/D

1MB R4000 Secondary Cache

Fast Static RAM Module Set

Four MCM4464 modules comprise a full 1 MB of secondary cache for the R4000 processor. Each module contains nine MCM6709J fast static RAMs for a cache data size of 64K x 36. The tag portion, dependent on word line size, contains either two MCM6709J or one MCM6706J fast static RAMs. All input signals, except A0 and WE are buffered using 74FBT2827 drivers with series 25 Ω resistors.

The MCM6709J and MCM6706J are fabricated using high±performance silicon±gate BiCMOS technology. Static design eliminates the need for internal clocks or timing strobes.

All 1MB R4000 supported secondary cache options are available.

•Single 5 V ± 10% Power Supply

•All Inputs and Outputs are TTL Compatible

•Three State Outputs

•Fast Module Access Time: 12/15/17 ns

•Zero Wait±State Operation

•Unified or Split Seconday Cache Modules are Available (See Ordering Information for Details)

•Word Line Sizes of 4, 8, 16, and 32 are Available (See Ordering Information for Details)

•The Pin Compatible MCM44256 Series is also Available to Support a Full 4MB R4000 Secondary Cache.

•Decoupling Capacitors are Used for Each Fast Static RAM and Buffer, Along with Bulk Capacitance for Maximum Noise Immunity

•High Quality Multi±Layer FR4 PWB with Separate Power and Ground Planes

						PIN NAMES
	A0 ± A15 . . . .					. . . . . . . . . . . . Address Inputs
	WE			.	. . . . . . . . .	. . . . . . . . . . . . . Write Enable
	DCS				. . . . . . . . .	. . . . . . . . . . . . . Data Enable
	TCS			. . . . . . . . .		. . . . . . . . . . . . . . Tag Enable
	OE	. . . . . . . . . .				. . . . . . . . . . . Output Enable
	DQ0 ± DQ35 . .					. . . . . . . Data Input / Output
	TDQ0 ± TDQ7					. . . TAG Data Input / Output
	VCC . . . . . . . . .					. . . . . . . + 5 V Power Supply
	VSS . . . . . . . . .					. . . . . . . . . . . . . . . . . Ground

For proper operation of the device, VSS must be connected to ground.

MCM4464 Series

PIN ASSIGNMENT

80 LEAD SIMM Ð TOP VIEW

	VCC			2	1		VSS
					3		DQ0
	DQ1			4
					5		DQ2
	DQ3			6
	DQ5			8	7		DQ4
	VSS			10	9		DQ6
					11		DQ7
	DQ8			12
	DQ10			14	13		DQ9
	DQ12			16	15		DQ11
	DQ14			18	17		DQ13
	DQ15			20	19		VSS
	DQ17			22	21		DQ16
					23		DQ18
	DQ19			24
	DQ21			26	25		DQ20
	VSS			28	27		DQ22
					29		VCC
	DQ23			30
	DQ25			32	31		DQ24
	DQ27			34	33		DQ26
					35		DQ28
	DQ29			36
	DQ30			38	37		VSS
	DQ32			40	39		DQ31
	DQ34			42	41	DQ33
					43	DQ35
	VSS			44
					45
		A0		46			WE
					47		A1
		A2		48
		A4		50	49		A3
		A6		52	51		A5
	VCC			54	53		VSS
					55		DCS
		OE		56
		A8		58	57		A7
	A10			60	59		A9
	VSS			62	61		A11
					63		A12
	A13			64
	A15			66*	65		A14
		NC		68*	67		NC
					69
	TDQ0			70			TCS
	TDQ1			72	71		VSS
					73		TDQ2
	TDQ3			74
	TDQ5			76	75		TDQ4
					77		TDQ6
	TDQ7			78
					79		VCC
	VSS			80

NOTE: Pin assignment is for unified cache. For split cache option, Pin 68 becomes Address MSB (A15) and Pin 66 is NC.

REV 1 8/94

Motorola, Inc. 1994

BLOCK DIAGRAM

64K x 36 CACHE

TCS

DCS

OE

A1

A2

A3 ± A15

A0

DQ0 ± DQ35

WE

TDQ0 ± TDQ7

		MCM6709J
		E
	74FBT2827	G
	DRIVER	A1
		A2
		A3 ± A15
	36	A0
		DQ0 ± DQ3
	8	W
	TAG OPTIONS:
	MCM6709J
	A0
	A1	4 WORD
	A2	LINE SIZE
	A3 ± A15	64K x 8
	E
	W	TAG
	G
	DQ0 ± DQ7

								MCM6706J
								A0			8 WORD
								A1			LINE SIZE
								A2 ± A14			32K x 8
								E
											TAG
							W
								G
								DQ0 ± DQ7			(A0 NOT USED)

MCM6706J

A0

16 WORD

A1

LINE SIZE

A2 ± A14

16K x 8

E

TAG

W

G

DQ0 ± DQ7

(A0, A1 NOT USED)

MCM6706J

A0

32 WORD

A1

LINE SIZE

A2 ± A14

8K x 8

E

TAG

W

G

DQ0 ± DQ7

(A0, A1, A2 NOT USED)

MCM4464 SERIES	MOTOROLA FAST SRAM
2

ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to VSS = 0 V)

Rating	Symbol	Value	Unit
Power Supply Voltage	VCC	± 0.5 to 7.0	V
Voltage Relative to VSS	Vin, Vout	± 0.5 to VCC + 0.5	V
Output Current (per I/O)	Iout	± 30	mA
Power Dissipation	PD	10	W
Temperature Under Bias	Tbias	± 10 to + 85	°C
Operating Temperature	TA	0 to + 70	°C
Storage Temperature	Tstg	± 25 to +125	°C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

This devices on this module contain circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to these high±impedance circuits.

These BiCMOS memory circuits have been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The module is in a test socket or mounted on a printed circuit board and transverse air flow of at leat 500 linear feet per minute is maintained.

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS (Voltages referenced to VSS = 0 V)

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage (Operating Voltage Range)

VCC

4.5

5.0

5.5

V

Input High Voltage

VIH

V

(DQ0 ± 35, TDQ0 ± 7,

WE,

A0)

2.2

Ð

VCC + 0.3 V*

(A1 ± A15,

OE,

DCS,

TCS)

2.0

Ð

VCC + 0.3 V*

Input Low Voltage

VIL

± 0.5**

Ð

0.8

V

*VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 20 ns)

**VIL (min) = ± 3.0 V ac (pulse width ≤ 20 ns)

DC CHARACTERISTICS

Parameter

Symbol

Min

Typ

Max

Unit

Input Leakage Current (All Inputs, Vin = 0 to VCC)

Ilkg(I)

± 10

μA

Output Leakage Current

= VIH, Vout = 0 to VCC)

Ilkg(O)

± 10

μA

(G,

xCS

AC Supply Current

= VIL, Iout = 0 mA)

ICCA

1850

mA

(G,

xCS

Output Low Voltage (IOL = + 8 mA)

VOL

0.4

V

OUtput High Voltage (IOH = ± 4.0 mA)

VOH

2.4

V

Note: Good decoupling of the local power supply should always be used.

CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested)

Parameter

Symbol

Typ

Max

Unit

Input Capacitance

(A0,

Cin

110

pF

WE)

(A1 ± A15,

Cin

10

pF

OE,

DCS,

TCS)

Input/Output Capacitance

Cout

10

pF

MOTOROLA FAST SRAM	MCM4464 SERIES
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