MOTOROLA MC74VHCT573AMEL, MC74VHCT573AML1, MC74VHCT573AML2, MC74VHCT573ADWR2, MC74VHCT573ADTR2 Datasheet

...
0 (0)
MOTOROLA MC74VHCT573AMEL, MC74VHCT573AML1, MC74VHCT573AML2, MC74VHCT573ADWR2, MC74VHCT573ADTR2 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Octal D-Type Latch with 3-State Output

The MC74VHCT573A is an advanced high speed CMOS octal latch with 3±state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

This 8±bit D±type latch is controlled by a latch enable input and an output enable input. When the output enable input is high, the eight outputs are in a high impedance state.

The VHCT inputs are compatible with TTL levels. This device can be used as a level converter for interfacing 3.3V to 5.0V, because it has full 5V CMOS level output swings.

The VHCT573A input and output (when disabled) structures provide protection when voltages between 0V and 5.5V are applied, regardless of the supply voltage. These input and output structures help prevent device destruction caused by supply voltage ± input/output voltage mismatch, battery backup, hot insertion, etc.

High Speed: tPD = 7.7ns (Typ) at VCC = 5V

Low Power Dissipation: ICC = 4μA (Max) at TA = 25°C

TTL±Compatible Inputs: VIL = 0.8V; VIH = 2.0V

Power Down Protection Provided on Inputs and Outputs

Balanced Propagation Delays

Designed for 4.5V to 5.5V Operating Range

Low Noise: VOLP = 1.6V (Max)

Pin and Function Compatible with Other Standard Logic Families

Latchup Performance Exceeds 300mA

ESD Performance: HBM > 2000V; Machine Model > 200V

Chip Complexity: 234 FETs or 58.5 Equivalent Gates

LOGIC DIAGRAM

 

 

D0

2

 

 

 

19

Q0

 

 

 

 

 

 

 

 

 

 

3

 

 

 

18

 

 

 

 

D1

 

 

 

Q1

 

 

 

4

 

 

 

17

 

 

 

 

D2

 

 

 

Q2

 

 

DATA

5

 

 

 

16

 

NONINVERTING

 

 

 

 

 

 

 

 

 

D3

 

 

 

Q3

 

6

 

 

 

15

INPUTS

 

D4

 

 

 

Q4

 

OUTPUTS

 

 

7

 

 

 

14

 

 

 

 

D5

 

 

 

Q5

 

 

 

8

 

 

 

13

 

 

 

 

D6

 

 

 

Q6

 

 

 

9

 

 

 

12

 

 

 

 

D7

 

 

 

Q7

 

 

 

 

 

 

 

 

 

 

11

 

 

 

 

 

 

 

 

LE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MC74VHCT573A

DW SUFFIX

20±LEAD SOIC PACKAGE

CASE 751D±04

DT SUFFIX

20±LEAD TSSOP PACKAGE

CASE 948E±02

M SUFFIX

20±LEAD SOIC EIAJ PACKAGE

CASE 967±01

ORDERING INFORMATION

MC74VHCTXXXADW SOIC

MC74VHCTXXXADT TSSOP

MC74VHCTXXXAM SOIC EIAJ

PIN ASSIGNMENT

 

 

 

 

1

20

VCC

 

OE

 

 

 

 

 

 

D0

 

2

19

Q0

 

D1

 

3

18

Q1

 

 

 

D2

 

4

17

Q2

 

 

 

D3

 

5

16

Q3

 

 

 

D4

 

6

15

Q4

 

 

 

D5

 

7

14

Q5

 

 

 

D6

 

8

13

Q6

 

 

 

D7

 

9

12

Q7

 

 

GND

 

10

11

LE

 

 

 

 

 

 

 

 

FUNCTION TABLE

 

 

 

INPUTS

 

OUTPUT

 

 

 

 

 

 

 

OE

 

LE

D

Q

 

 

 

 

 

 

 

L

 

H

H

H

 

L

 

H

L

L

 

L

 

L

X

No Change

 

H

 

X

X

Z

 

 

 

 

 

 

6/97

Motorola, Inc. 1997

1

REV 0

MC74VHCT573A

MAXIMUM RATINGS*

Symbol

Parameter

 

Value

Unit

 

 

 

 

 

VCC

DC Supply Voltage

 

± 0.5 to + 7.0

V

Vin

DC Input Voltage

 

± 0.5 to + 7.0

V

Vout

DC Output Voltage

Outputs in 3±State

± 0.5 to + 7.0

V

 

 

High or Low State

± 0.5 to VCC + 0.5

 

IIK

Input Diode Current

 

± 20

mA

IOK

Output Diode Current (VOUT < GND; VOUT > VCC)

± 20

mA

Iout

DC Output Current, per Pin

 

± 25

mA

ICC

DC Supply Current, VCC and GND Pins

± 75

mA

PD

Power Dissipation in Still Air,

SOIC Packages²

500

mW

 

 

TSSOP Package²

450

 

 

 

 

 

 

Tstg

Storage Temperature

 

± 65 to + 150

_C

*Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute±maximum±rated conditions is not implied.

²Derating Ð SOIC Packages: ± 7 mW/ _C from 65_ to 125_C TSSOP Package: ± 6.1 mW/_C from 65_ to 125_C

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

 

Min

Max

Unit

 

 

 

 

 

 

VCC

DC Supply Voltage

 

4.5

5.5

V

Vin

DC Input Voltage

 

0

5.5

V

Vout

DC Output Voltage

Outputs in 3±State

0

5.5

V

 

 

High or Low State

0

VCC

 

TA

Operating Temperature

 

± 40

+ 85

_C

tr, tf

Input Rise and Fall Time

VCC =5.0V ±0.5V

0

20

ns/V

DC ELECTRICAL CHARACTERISTICS

This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high±impedance circuit. For proper operation, Vin and Vout should be constrained to the

range GND v (Vin or Vout) v VCC. Unused inputs must always be

tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.

 

 

 

 

 

 

 

VCC

 

TA = 25°C

 

TA = ± 40 to 85°C

 

Symbol

 

Parameter

Test Conditions

V

Min

 

Typ

 

Max

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

VIH

Minimum High±Level

 

4.5 to

2.0

 

 

 

 

2.0

 

V

 

Input Voltage

 

 

5.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Maximum Low±Level

 

4.5 to

 

 

 

 

0.8

 

0.8

V

 

Input Voltage

 

 

5.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

Minimum High±Level

IOH = ± 50μA

4.5

4.4

 

4.5

 

 

4.4

 

V

 

Output Voltage

 

 

 

 

 

 

 

 

 

 

 

V

= V

IH

or V

IL

IOH = ± 8mA

4.5

3.94

 

 

 

 

3.80

 

 

 

in

 

 

 

 

 

 

 

 

 

 

 

 

VOL

Maximum Low±Level

IOL = 50μA

4.5

 

 

0.0

 

0.1

 

0.1

V

 

Output Voltage

 

 

 

 

 

 

 

 

 

 

 

V

= V

IH

or V

IL

IOL = 8mA

4.5

 

 

 

 

0.36

 

0.44

 

 

in

 

 

 

 

 

 

 

 

 

 

 

 

Iin

Maximum Input

Vin = 5.5 V or GND

0 to 5.5

 

 

 

 

± 0.1

 

± 1.0

μA

 

Leakage Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Maximum 3±State

Vin = VIL or VIH

5.5

 

 

 

 

± 0.25

 

± 2.5

μA

 

Leakage Current

Vout = VCC or GND

 

 

 

 

 

 

 

 

 

ICC

Maximum Quiescent

Vin = VCC or GND

5.5

 

 

 

 

4.0

 

40.0

μA

 

Supply Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MOTOROLA

2

VHC Data ± Advanced CMOS Logic

 

 

DL203 Ð Rev 1

MC74VHCT573A

DC ELECTRICAL CHARACTERISTICS

 

 

 

 

VCC

 

TA = 25°C

 

TA = ± 40 to 85°C

 

Symbol

Parameter

Test Conditions

V

Min

 

Typ

 

Max

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

ICCT

Quiescent Supply

Per Input: VIN = 3.4V

 

5.5

 

 

 

 

1.35

 

1.50

mA

 

Current

Other Input: VCC or GND

 

 

 

 

 

 

 

 

 

 

IOPD

Output Leakage

VOUT = 5.5V

 

0

 

 

 

 

0.5

 

5.0

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)

 

 

 

 

 

 

TA = 25°C

 

TA = ± 40 to 85°C

 

Symbol

 

Parameter

Test Conditions

Min

Typ

 

Max

 

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tPLH,

 

Maximum Propagation Delay,

VCC = 5.0 ± 0.5V

CL = 15pF

 

7.7

 

12.3

 

1.0

13.5

 

ns

tPHL

 

LE to Q

 

CL = 50pF

 

8.5

 

13.3

 

1.0

14.5

 

 

tPLH,

 

Maximum Propagation Delay,

VCC = 5.0 ± 0.5V

CL = 15pF

 

5.1

 

8.5

 

1.0

9.5

 

ns

tPHL

 

D to Q

 

CL = 50pF

 

5.9

 

9.5

 

1.0

10.5

 

 

tPZL,

 

Output Enable Time,

VCC = 5.0 ± 0.5V

CL = 15pF

 

6.3

 

10.9

 

1.0

12.5

 

ns

tPZH

 

OE to Q

RL = 1kΩ

CL = 50pF

 

7.1

 

11.9

 

1.0

13.5

 

 

tPLZ,

 

Output Disable Time,

VCC = 5.0 ± 0.5V

CL = 50pF

 

8.8

 

11.2

 

1.0

12.0

 

ns

tPHZ

 

OE to Q

RL = 1kΩ

 

 

 

 

 

 

 

 

 

 

 

tOSLH,

 

Output to Output Skew

VCC = 5.5 ± 0.5V

CL = 50pF

 

 

 

 

1.0

 

 

1.0

 

ns

tOSHL

 

 

(Note 1.)

 

 

 

 

 

 

 

 

 

 

 

Cin

 

Maximum Input Capacitance

 

 

 

4

 

10

 

 

10

 

pF

Cout

 

Maximum Three±State Output

 

 

 

6

 

 

 

 

 

 

pF

 

 

Capacitance (Output in

 

 

 

 

 

 

 

 

 

 

 

 

 

 

High±Impedance State)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical @ 25°C, VCC = 5.0V

 

 

CPD

 

Power Dissipation Capacitance (Note 2.)

 

 

 

 

 

 

25

 

 

pF

1.Parameter guaranteed by design. tOSLH = |tPLHm ± tPLHn|, tOSHL = |tPHLm ± tPHLn|.

2.CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

Averageoperatingcurrentcanbeobtainedbytheequation:ICC(OPR) = CPD VCC fin+ ICC / 8(perlatch).CPDisusedtodeterminetheno±load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.

NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50 pF, VCC = 5.0V)

 

 

TA = 25°C

 

Symbol

Parameter

Typ

Max

Unit

 

 

 

 

 

VOLP

Quiet Output Maximum Dynamic VOL

1.2

1.6

V

VOLV

Quiet Output Minimum Dynamic VOL

±1.2

±1.6

V

VIHD

Minimum High Level Dynamic Input Voltage

 

2.0

V

VILD

Maximum Low Level Dynamic Input Voltage

 

0.8

V

TIMING REQUIREMENTS (Input tr = tf = 3.0ns)

 

 

 

 

 

 

TA = ± 40

 

 

 

 

 

TA = 25°C

to 85°C

 

Symbol

Parameter

Test Conditions

Typ

Limit

Limit

Unit

 

 

 

 

 

 

 

 

tw(h)

Minimum Pulse Width, LE

VCC = 5.0

±0.5V

 

6.5

8.5

ns

tsu

Minimum Setup Time, D to LE

VCC = 5.0

± 0.5V

 

1.5

1.5

ns

th

Minimum Hold Time, D to LE

VCC = 5.0

± 0.5V

 

3.5

3.5

ns

VHC Data ± Advanced CMOS Logic

3

MOTOROLA

DL203 Ð Rev 1

 

 

Loading...
+ 4 hidden pages