MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCM6264C/D
8K x 8 Bit Fast Static RAM
The MCM6264C is fabricated using Motorola's high±performance silicon±gate CMOS technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability.
This device meets JEDEC standards for functionality and pinout, and is available in plastic dual±in±line and plastic small±outline J±leaded packages.
•Single 5 V ± 10% Power Supply
•Fully Static Ð No Clock or Timing Strobes Necessary
•Fast Access Times: 12, 15, 20, 25, and 35 ns
•Equal Address and Chip Enable Access Times
•Output Enable (G) Feature for Increased System Flexibility and to Eliminate Bus Contention Problems
•Low Power Operation: 110 ± 150 mA Maximum AC
•Fully TTL Compatible Ð Three State Output
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BLOCK DIAGRAM |
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A2 |
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A3 |
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VCC |
A4 |
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VSS |
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A5 |
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MEMORY MATRIX |
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256 ROWS x 32 |
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A7 |
DECODER |
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x 9 COLUMNS |
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A8 |
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A9 |
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A11 |
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DQ0 |
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COLUMN I/O |
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INPUT |
COLUMN DECODER |
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DATA |
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CONTROL |
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DQ7 |
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A0 |
A1 |
A6 |
A10 A12 |
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E1 |
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E2 |
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W |
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G |
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MCM6264C
P PACKAGE
300 MIL PLASTIC CASE 710B±01
J PACKAGE 300 MIL SOJ CASE 810B±03
PIN ASSIGNMENT
NC |
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1 |
28 |
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VCC |
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A12 |
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2 |
27 |
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W |
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A7 |
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3 |
26 |
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E2 |
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A6 |
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4 |
25 |
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A8 |
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A5 |
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5 |
24 |
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A9 |
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A4 |
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6 |
23 |
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A11 |
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A3 |
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7 |
22 |
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G |
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A2 |
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8 |
21 |
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A10 |
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A1 |
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9 |
20 |
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E1 |
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A0 |
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10 |
19 |
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DQ7 |
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DQ0 |
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11 |
18 |
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DQ6 |
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DQ1 |
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12 |
17 |
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DQ5 |
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DQ2 |
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13 |
16 |
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DQ4 |
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VSS |
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14 |
15 |
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DQ3 |
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PIN NAMES
A0 ± A12 . . . . . . . . . . . . . Address Input
DQ0 ± DQ7 . . . Data Input/Data Output
W . . . . . . . . . . . . . . . . . . . . Write Enable
G . . . . . . . . . . . . . . . . . . . Output Enable
E1, E2 . . . . . . . . . . . . . . . . . Chip Enable
VCC . . . . . . . . . . . Power Supply (+ 5 V)
VSS . . . . . . . . . . . . . . . . . . . . . . . Ground
REV 2 5/95
Motorola, Inc. 1995
TRUTH TABLE (X = Don't Care)
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E1 |
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E2 |
G |
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W |
Mode |
VCC Current |
Output |
Cycle |
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H |
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X |
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X |
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X |
Not Selected |
ISB1, ISB2 |
High±Z |
Ð |
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X |
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L |
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X |
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X |
Not Selected |
ISB1, ISB2 |
High±Z |
Ð |
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L |
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H |
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H |
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H |
Output Disabled |
ICCA |
High±Z |
Ð |
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L |
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H |
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L |
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H |
Read |
ICCA |
Dout |
Read Cycle |
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L |
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H |
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X |
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L |
Write |
ICCA |
High±Z |
Write Cycle |
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating |
Symbol |
Value |
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Unit |
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Power Supply Voltage |
VCC |
± 0.5 to + |
7.0 |
V |
Voltage Relative to VSS for Any Pin |
Vin, Vout |
± 0.5 to VCC + 0.5 |
V |
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Except VCC |
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Output Current |
Iout |
± 20 |
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mA |
Power Dissipation |
PD |
1.0 |
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W |
Temperature Under Bias |
Tbias |
± 10 to + |
85 |
°C |
Operating Temperature |
TA |
0 to + 70 |
°C |
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Storage Temperature Ð Plastic |
Tstg |
± 55 to + 125 |
°C |
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to these high±impedance circuits.
This CMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to +70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
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Supply Voltage (Operating Voltage Range) |
VCC |
4.5 |
5.0 |
5.5 |
V |
Input High Voltage |
VIH |
2.2 |
Ð |
VCC + 0.3** |
V |
Input Low Voltage |
VIL |
± 0.5* |
Ð |
0.8 |
V |
*VIL (min) = ± 0.5 V dc; VIL (min) = ± 2.0 V ac (pulse width ≤ 20 ns)
**VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 20 ns)
DC CHARACTERISTICS
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Parameter |
Symbol |
Min |
Max |
Unit |
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Input Leakage Current (All Inputs, Vin = 0 to VCC) |
Ilkg(I) |
Ð |
± 1 |
μA |
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Output Leakage Current |
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= VIH, E2 = VIL, or |
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= VIH, Vout = 0 to VCC) |
Ilkg(O) |
Ð |
± 1 |
μA |
(E1 |
G |
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Output Low Voltage (IOL = 8.0 mA) |
VOL |
Ð |
0.4 |
V |
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Output High Voltage (IOH = ± 4.0 mA) |
VOH |
2.4 |
Ð |
V |
POWER SUPPLY CURRENTS
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Parameter |
Symbol |
± 12 |
± 15 |
± 20 |
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± 25 |
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± 35 |
Unit |
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AC Active Supply Current (Iout = 0 mA, VCC = Max, f = fmax) |
ICCA |
150 |
140 |
130 |
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120 |
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110 |
mA |
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AC Standby Current |
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= VIH or E2 = VIL, VCC = Max, f = fmax) |
ISB1 |
45 |
40 |
35 |
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30 |
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30 |
mA |
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(E1 |
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Standby Current |
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≥ VCC ± 0.2 V or E2 ≤ VSS + 0.2 V, |
ISB2 |
20 |
20 |
20 |
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20 |
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20 |
mA |
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(E1 |
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Vin ≤ VSS + 0.2 V or ≥ VCC ± 0.2 V) |
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CAPACITANCE (f = 1 MHz, dV = 3 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested) |
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Parameter |
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Symbol |
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Max |
Unit |
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Address Input Capacitance |
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Cin |
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6 |
pF |
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Control Pin Input Capacitance |
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E2, |
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Cin |
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6 |
pF |
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(E1, |
G, W) |
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I/O Capacitance |
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CI/O |
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7 |
pF |
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MCM6264C |
MOTOROLA FAST SRAM |
2 |
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AC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted)
Input Timing Measurement Reference Level . . . . . . . . . . . . |
. . . 1.5 |
V |
Output Timing Measurement Reference Level . . . . . . . . . . . . . |
1.5 V |
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Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
0 to 3.0 |
V |
Output Load . . . . . . . . . . . . |
See Figure 1A Unless Otherwise Noted |
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Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . 5 ns |
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READ CYCLE (See Notes 1 and 2)
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± 12 |
± 15 |
± 20 |
± 25 |
± 35 |
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Parameter |
Symbol |
Min |
Max |
Min |
Max |
Min |
Max |
Min |
Max |
Min |
Max |
Unit |
Notes |
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Read Cycle Time |
tAVAV |
12 |
Ð |
15 |
Ð |
20 |
Ð |
25 |
Ð |
35 |
Ð |
ns |
3 |
Address Access Time |
tAVQV |
Ð |
12 |
Ð |
15 |
Ð |
20 |
Ð |
25 |
Ð |
35 |
ns |
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Enable Access Time |
tELQV |
Ð |
12 |
Ð |
15 |
Ð |
20 |
Ð |
25 |
Ð |
35 |
ns |
4 |
Output Enable Access Time |
tGLQV |
Ð |
6 |
Ð |
8 |
Ð |
10 |
Ð |
11 |
Ð |
12 |
ns |
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Output Hold from Address Change |
tAXQX |
4 |
Ð |
4 |
Ð |
4 |
Ð |
4 |
Ð |
4 |
Ð |
ns |
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Enable Low to Output Active |
tELQX |
4 |
Ð |
4 |
Ð |
4 |
Ð |
4 |
Ð |
4 |
Ð |
ns |
5, 6 ,7 |
Enable High to Output High±Z |
tEHQZ |
0 |
6 |
0 |
8 |
0 |
9 |
0 |
10 |
0 |
11 |
ns |
5, 6, 7 |
Output Enable Low to Output Active |
tGLQX |
0 |
Ð |
0 |
Ð |
0 |
Ð |
0 |
Ð |
0 |
Ð |
ns |
5, 6, 7 |
Output Enable High to Output High±Z |
tGHQZ |
0 |
6 |
0 |
7 |
0 |
8 |
0 |
9 |
0 |
10 |
ns |
5, 6, 7 |
Power Up Time |
tELICCH |
0 |
Ð |
0 |
Ð |
0 |
Ð |
0 |
Ð |
0 |
Ð |
ns |
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Power Down Time |
tEHICCL |
Ð |
12 |
Ð |
15 |
Ð |
20 |
Ð |
25 |
Ð |
35 |
ns |
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NOTES: |
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1.W is high for read cycle.
2.E1 and E2 are represented by E in this data sheet. E2 is of opposite polarity to E.
3.All timings are referenced from the last valid address to the first transitioning address.
4.Addresses valid prior to or coincident with E going low.
5.At any given voltage and temperature, tEHQZ (max) is less than tELQX (min), and tGHQZ (max) is less than tGLQX (min), both for a given device and from device to device.
6.Transition is measured ± 500 mV from steady±state voltage with load of Figure 1B.
7.This parameter is sampled and not 100% tested.
8.Device is continuously selected (E1 = VIL, E2 = VIH, G = VIL).
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AC TEST LOADS |
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+ 5 V |
OUTPUT |
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480 Ω |
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OUTPUT |
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Z0 = 50 Ω |
50 Ω |
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255 Ω |
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5 pF |
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VL = 1.5 V |
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Figure 1A |
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Figure 1B |
TIMING LIMITS
The table of timing values shows either a minimum or a maximum limit for each parameter. Input requirements are specified from the external system point of view. Thus, address setup time is shown as a minimum since the system must supply at least that much time (even though most devices do not require it). On the other hand, responses from the memory are specified from the device point of view. Thus, the access time is shown as a maximum since the device never provides data later than that time.
MOTOROLA FAST SRAM |
MCM6264C |
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3 |