Discrete POWER & Signal
Technologies
J309 |
MMBFJ309 |
J310 |
MMBFJ310 |
G
D
G |
TO-92 |
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S D |
SOT-23 |
S |
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Mark: 6U / 6T |
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N-Channel RF Amplifier
This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.
Absolute Maximum Ratings* |
TA = 25°C unless otherwise noted |
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Symbol |
Parameter |
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Value |
Units |
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VDS |
Drain-Source Voltage |
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25 |
V |
VGS |
Gate-Source Voltage |
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- 25 |
V |
IGF |
Forward Gate Current |
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10 |
mA |
TJ ,Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
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*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics |
TA = 25°C unless otherwise noted |
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Symbol |
Characteristic |
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Max |
Units |
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J309 / J310 |
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*MMBFJ309 |
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PD |
Total Device Dissipation |
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350 |
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225 |
mW |
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Derate above 25°C |
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2.8 |
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1.8 |
mW/°C |
RθJC |
Thermal Resistance, Junction to Case |
125 |
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°C/W |
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RθJA |
Thermal Resistance, Junction to Ambient |
357 |
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556 |
°C/W |
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*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
MMBFJ310 / MMBFJ309 / J310 / J309
ã 1997 Fairchild Semiconductor Corporation
N-Channel RF Amplifier
(continued)
Electrical Characteristics |
TA = 25°C unless otherwise noted |
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Symbol |
Parameter |
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Test Conditions |
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Min |
Typ |
Max |
Units |
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OFF CHARACTERISTICS |
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V(BR)GSS |
Gate-Source Breakdown Voltage |
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IG = - 1.0 μA, VDS = 0 |
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- 25 |
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V |
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IGSS |
Gate Reverse Current |
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VGS = - 15 V, VDS = 0 |
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- 1.0 |
nA |
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VGS = - 15 V, VDS = 0, TA = 125°C |
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- 1.0 |
μA |
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VGS(off) |
Gate-Source Cutoff Voltage |
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VDS = 10 V, ID = 1.0 nA |
J309 |
- 1.0 |
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- 4.0 |
V |
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J310 |
- 2.0 |
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- 6.5 |
V |
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ON CHARACTERISTICS |
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IDSS |
Zero-Gate Voltage Drain Current* |
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VDS = 10 V, VGS = 0 |
J309 |
12 |
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30 |
mA |
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J310 |
24 |
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60 |
mA |
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VGS(f) |
Gate-Source Forward Voltage |
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VDS = 0, IG = 1.0 mA |
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1.0 |
V |
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SMALL SIGNAL CHARACTERISTICS |
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Re(yis) |
Common-Source Input Conductance |
VDS = 10, ID = 10 mA, f = 100 MHz |
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J309 |
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0.7 |
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mmhos |
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J310 |
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0.5 |
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mmhos |
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Re(yos) |
Common-Source Output |
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VDS = 10, ID = 10 mA, f = 100 MHz |
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0.25 |
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mmhos |
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Conductance |
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Gpg |
Common-Gate Power Gain |
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VDS = 10, ID = 10 mA, f = 100 MHz |
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16 |
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dB |
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Re(yfs) |
Common-Source Forward |
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VDS = 10, ID = 10 mA, f = 100 MHz |
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12 |
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mmhos |
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Transconductance |
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Re(yig) |
Common-Gate Input Conductance |
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VDS = 10, ID = 10 mA, f = 100 MHz |
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12 |
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mmhos |
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gfs |
Common-Source Forward |
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VDS = 10, ID = 10 mA, f = 1.0 kHz |
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μmhos |
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Transconductance |
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J309 |
10,000 |
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20,000 |
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J310 |
8000 |
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18,000 |
μmhos |
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gos |
Common-Source Output |
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VDS = 10, ID = 10 mA, f = 1.0 kHz |
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150 |
μmhos |
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Conductance |
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gfg |
Common-Gate Forward Conductance |
VDS = 10, ID = 10 mA, f = 1.0 kHz |
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μmhos |
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J309 |
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13,000 |
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J310 |
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12,000 |
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μmhos |
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gog |
Common-Gate Output Conductance |
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VDS = 10, ID = 10 mA, f = 1.0 kHz |
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μmhos |
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J309 |
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100 |
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J310 |
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150 |
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μmhos |
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Cdg |
Drain-Gate Capacitance |
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VDS = 0, VGS = - 10, f = 1.0 MHz |
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2.0 |
2.5 |
pF |
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Csg |
Source-Gate Capacitance |
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VDS = 0, VGS = - 10, f = 1.0 MHz |
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4.1 |
5.0 |
pF |
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NF |
Noise Figure |
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VDS = 10 V, ID = 10 mA, |
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3.0 |
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dB |
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f = 450 MHz |
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en |
Equivalent Short-Circuit Input |
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VDS = 10 V, ID = 10 mA, |
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6.0 |
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nV/ÖHz |
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Noise Voltage |
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f = 100 Hz |
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*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
MMBFJ310 / MMBFJ309 / J310 / J309
N-Channel RF Amplifier
(continued)
Typical Characteristics
Transfer Characteristics |
Transfer Characteristics |
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Transfer Characteristics |
Transfer Characteristics |
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Input Admittance |
Forward Transadmittance |
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MMBFJ310 / MMBFJ309 / J310 / J309
|
N-Channel RF Amplifier |
|
(continued) |
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Typical Characteristics (continued) |
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Output Conductance vs. |
Common Drain-Source |
Drain Current |
Output Admittance |
Capacitance vs. Voltage |
Noise Voltage vs. Frequency |
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Reverse Transadmittance |
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MMBFJ310 / MMBFJ309 / J310 / J309
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