Panasonic UNR9215, UNR9214, UNR9213, UNR9212, UNR9211 Datasheet

1

Transistors with built-in Resistor

UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/

921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ

Silicon NPN epitaxial planer transistor

For digital circuits

■

Features

●

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

●

SS-Mini type package, allowing automatic insertion through tape

packing and magazine packing.

■

Resistance by Part Number

Marking Symbol (R

1

)(R

2

)

●

UN9211 8A 10kΩ 10kΩ

●

UN9212 8B 22kΩ 22kΩ

●

UN9213 8C 47kΩ 47kΩ

●

UN9214 8D 10kΩ 47kΩ

●

UN9215 8E 10kΩ —

●

UN9216 8F 4.7kΩ —

●

UN9217 8H 22kΩ —

●

UN9218 8I 0.51kΩ 5.1kΩ

●

UN9219 8K 1kΩ 10kΩ

●

UN9210 8L 47kΩ —

●

UN921D 8M 47kΩ 10kΩ

●

UN921E 8N 47kΩ 22kΩ

●

UN921F 8O 4.7kΩ 10kΩ

●

UN921K 8P 10kΩ 4.7kΩ

●

UN921L 8Q 4.7kΩ 4.7kΩ

●

UNR921M EL 2.2kΩ 47kΩ

●

UNR921N EX 4.7kΩ 47kΩ

●

UNR921AJ 8X 100kΩ 100kΩ

●

UNR921BJ 8Y 100kΩ —

●

UNR921CJ 8Z — 47kΩ

■

Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Internal Connection

Parameter Symbol Ratings Unit

Collector to base voltage V

CBO

50 V

Collector to emitter voltage

V

CEO

50 V

Collector current I

C

100 mA

Total power dissipation P

T

125 mW

Junction temperature T

j

125 ˚C

Storage temperature T

stg

–55 to +125 ˚C

1 : Base

2 : Emitter

3 : Collector

SS–Mini Type Pakage

1.6±0.15

1.6±0.1

1.0±0.1

0.75±0.15

0.45±0.1

0.5

0.3

0 to 0.1

0.5

0.8±0.1 0.40.4

0.2

+0.1

-0.05

0.15

+0.1

-0.05

1

2

3

0.2±0.1

B

C

R1

R2

E

Unit: mm

1 : Base

2 : Emitter

3 : Collector

SS–Mini Flat Type Pakage (J type)

1.60

+0.05

–0.03

0.70

+0.05

–0.03

0.12

+0.03

–0.01

0 to 0.1

0.80 0.80

0.500.50

1.60±0.05

0.80±0.050.80

0.425 0.425

1.00±0.05

0.27±0.02

0.85

+0.05

–0.03

2

Transistors with built-in Resistor

■

Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit

Collector cutoff current

I

CBO

V

CB

= 50V, I

E

= 0 0.1 µA

I

CEO

V

CE

= 50V, I

B

= 0 0.5 µA

UN9211 0.5

UN9212/9214/921E/921D 0.2

UN9213/UNR921M/921N/UNR921AJ

0.1

UN9215/9216/9217/9210/UNR921BJ

I

EBO

V

EB

= 6V, I

C

= 0 0.01 mA

UN921F/921K 1.0

UN9219 1.5

UN9218/921L/UNR921CJ 2.0

Collector to base voltage V

CBO

I

C

= 10µA, I

E

= 0 50 V

Collector to emitter voltage V

CEO

I

C

= 2mA, I

B

= 0 50 V

UN9211 35

UN9212/921E 60

UN9213/9214/921M/UNR921AJ/921CJ

80

UN9215*/9216*/9217*/9210*/UNR921BJ

h

FE

V

CE

= 10V, I

C

= 5mA 160 460

UN921F/921D/9219 30

UN9218/921K/921L 20

UN921N 80 400

Collector to emitter saturation voltage V

CE(sat)

I

C

= 10mA, I

B

= 0.3mA 0.25 V

Output voltage high level V

OH

V

CC

= 5V, V

B

= 0.5V, R

L

= 1kΩ 4.9 V

Output voltage low level V

CC

= 5V, V

B

= 2.5V, R

L

= 1kΩ 0.2

UN9213/921K/UNR921BJ V

OC

= 5V, V

B

= 3.5V, R

1

= 1kΩ 0.2

UN921D V

OL

V

CC

= 5V, V

B

= 10V, R

1

= 1kΩ 0.2 V

UN921E V

CC

= 5V, V

B

= 6V, R

L

= 1kΩ 0.2

UNR921AJ V

CC

= 5V, V

B

= 5V, R

L

= 1kΩ 0.2

Transition frequency f

T

V

CB

= 10V, I

E

= –2mA, f = 200MHz 150 MHz

UN9211/9214/9215/921K 10

UN9212/9217 22

UN9213/921D/921E/9210 47

UN9216/921F/921L/UNR921N

R

1

(–30%) 4.7 (+30%) kΩ

UN9218 0.51

UN9219/UNR921M 1

UNR921AJ/921BJ 100

Emitter

cutoff

current

Forward

current

transfer

ratio

Input

resis-

tance

* h

FE

rank classification (UN9215/9216/9217/9210)

Rank Q R S

h

FE

160 to 260 210 to 340 290 to 460

UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/

921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ

3

Transistors with built-in Resistor

■

Electrical Characteristics (continued) (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit

UN9211/9212/9213/921L 0.8 1.0 1.2

UN9214 0.17 0.21 0.25

UN9218/9219 0.08 0.1 0.12

UN921D 4.7

UN921E

R

1

/R

2

2.14

UN921F 0. 47

UN921K 2.13

UN921M 0.047

UN921N 0.1

UNR921AJ 1.0

Resistance between Emitter to Base

UNR921CJ

R

2

–30% 47 30% kΩ

Resis-

tance

ratio

UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/

921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ

4

Transistors with built-in Resistor

UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/

921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ

Common characteristics chart

P

T

— Ta

Characteristics charts of UN9211

I

C

— V

CE

V

CE(sat)

— I

C

h

FE

— I

C

C

ob

— V

CB

I

O

— V

IN

V

IN

— I

O

0

012210486

40

120

80

160

140

100

60

20

Collector to emitter voltage V

CE

(

V

)

Collector current I

C

(

mA

)

Ta=25˚C

I

B

=1.0mA

0.1mA

0.2mA

0.3mA

0.4mA

0.5mA

0.6mA

0.7mA

0.8mA

0.9mA

0.01

0.03

0.1 0.3

0.1

0.3

1

3

10

30

100

1 3 10 30 100

Collector current I

C

(

mA

)

Collector to emitter saturation voltage V

CE(sat)

(

V

)

I

C

/I

B

=10

Ta=75˚C

25˚C

–25˚C

0

13

100

200

300

400

10 30 100 300 1000

Forward current transfer ratio h

FE

Collector current I

C

(

mA

)

V

CE

=10V

Ta=75˚C

25˚C

–25˚C

0

0.1 0.3

6

5

4

3

2

1

1 3 10 30 100

Collector output capacitance C

ob

(

pF

)

Collector to base voltage V

CB

(

V

)

f=1MHz

I

E

=0

Ta=25˚C

1

3

0.4

10

30

100

300

1000

3000

10000

1.41.21.00.80.6

Output current I

O

(

µA

)

Input voltage V

IN

(

V

)

V

O

=5V

Ta=25˚C

0.01

0.03

0.1 0.3

0.1

0.3

1

3

10

30

100

1 3 10 30 100

Input voltage V

IN

(

V

)

Output current I

O

(

mA

)

V

O

=0.2V

Ta=25˚C

0

0 16020 60 100 14040 12080

150

125

100

75

50

25

Ambient temperature Ta

(

˚C

)

Total power dissipation P

T

(

mW

)

5

Transistors with built-in Resistor

UN1211/1212/1213/1214/1215/1216/1217/1218/

1219/1210/121D/121E/121F/121K/121L

Characteristics charts of UN9212

I

C

— V

CE

V

CE(sat)

— I

C

h

FE

— I

C

C

ob

— V

CB

I

O

— V

IN

V

IN

— I

O

Characteristics charts of UN9213

I

C

— V

CE

V

CE(sat)

— I

C

h

FE

— I

C

0

012210486

40

120

80

160

140

100

60

20

Collector to emitter voltage V

CE

(

V

)

Collector current I

C

(

mA

)

Ta=25˚C

I

B

=1.0mA

0.1mA

0.2mA

0.3mA

0.4mA

0.5mA

0.6mA

0.7mA

0.9mA

0.8mA

0.01

0.03

0.1 0.3

0.1

0.3

1

3

10

30

100

1 3 10 30 100

Collector current I

C

(

mA

)

Collector to emitter saturation voltage V

CE(sat)

(

V

)

I

C

/I

B

=10

Ta=75˚C

25˚C

–25˚C

0

13

100

200

300

400

10 30 100 300 1000

Forward current transfer ratio h

FE

Collector current I

C

(

mA

)

V

CE

=10V

Ta=75˚C

25˚C

–25˚C

0

0.1 0.3

6

5

4

3

2

1

1 3 10 30 100

Collector output capacitance C

ob

(

pF

)

Collector to base voltage V

CB

(

V

)

f=1MHz

I

E

=0

Ta=25˚C

1

3

0.4

10

30

100

300

1000

3000

10000

1.41.21.00.80.6

Output current I

O

(

µA

)

Input voltage V

IN

(

V

)

V

O

=5V

Ta=25˚C

0.01

0.03

0.1 0.3

0.1

0.3

1

3

10

30

100

1 3 10 30 100

Input voltage V

IN

(

V

)

Output current I

O

(

mA

)

V

O

=0.2V

Ta=25˚C

0

012210486

40

120

80

160

140

100

60

20

Collector to emitter voltage V

CE

(

V

)

Collector current I

C

(

mA

)

Ta=25˚C

I

B

=1.0mA

0.1mA

0.2mA

0.3mA

0.4mA

0.5mA

0.6mA

0.7mA

0.8mA

0.9mA

0.01

0.03

0.1 0.3

0.1

0.3

1

3

10

30

100

1 3 10 30 100

Collector current I

C

(

mA

)

Collector to emitter saturation voltage V

CE(sat)

(

V

)

I

C

/I

B

=10

Ta=75˚C

25˚C

–25˚C

0

13

100

200

300

400

350

250

150

50

10 30 100 300 1000

Forward current transfer ratio h

FE

Collector current I

C

(

mA

)

V

CE

=10V

Ta=75˚C

25˚C

–25˚C