Panasonic UNR1110, UNR1111, UNR1112, UNR1113, UNR1114 Technical data

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UNR1110

Transistors with built-in Resistor

UNR111x Series (UN111x Series)

Silicon PNP epitaxial planar transistor

For digital circuits

■ Features

•Costs can be reduced through downsizing of the equipment and reduction of the number of parts

•M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

■ Resistance by Part Number

			(R1)	(R2)
•	UNR1110	(UN1110)	47 kΩ
•	UNR1111	(UN1111)	10 kΩ	10 kΩ
•	UNR1112	(UN1112)	22 kΩ	22 kΩ
•	UNR1113	(UN1113)	47 kΩ	47 kΩ
•	UNR1114	(UN1114)	10 kΩ	47 kΩ
•	UNR1115	(UN1115)	10 kΩ
•	UNR1116	(UN1116)	4.7 kΩ
•	UNR1117	(UN1117)	22 kΩ
•	UNR1118	(UN1118)	0.51 kΩ	5.1 kΩ
•	UNR1119	(UN1119)	1 kΩ	10 kΩ
•	UNR111D	(UN111D)	47 kΩ	10 kΩ
•	UNR111E	(UN111E)	47 kΩ	22 kΩ
•	UNR111F	(UN111F)	4.7 kΩ	10 kΩ
•	UNR111H	(UN111H)	2.2 kΩ	10 kΩ
•	UNR111L	(UN111L)	4.7 kΩ	4.7 kΩ

					Unit: mm
	6.9±0.1				2.5±0.1
(0.4)	(1.5)				(1.0)
	(1.5)				(1.0)
					(1.0)
		R 0.9	3.5±0.1		4.5±0.1
R 0.7			3.5±0.1	2.0±0.2	4.5±0.1
1.0±0.1			2.4±0.2	2.0±0.2	4.1±0.2
	(0.85)				0.45±0.05
	0.55±0.1		1.25±0.05
			1.25±0.05
	3	2	1
	(2.5)	(2.5)			1: Base
					2: Collector
					3: Emitter
					M-A1 Package

Internal Connection

R1 C

■ Absolute Maximum Ratings Ta = 25°C

Parameter	Symbol	Rating	Unit

Collector-base voltage (Emitter open)	VCBO	−50	V
Collector-emitter voltage (Base open)	VCEO	−50	V
Collector current	IC	−100	mA

Total power dissipation	PT	400	mW

Junction temperature	Tj	150	°C

Storage temperature	Tstg	−55 to +150	°C

Note) The part numbers in the parenthesis show conventional part number.

Publication date: October 2003

SJH00001BED

UNR111x Series

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter		Symbol	Conditions	Min	Typ	Max	Unit

Collector-base voltage (Emitter open)		VCBO	IC = −10 µA, IE = 0	−50			V
Collector-emitter voltage (Base open)		VCEO	IC = −2 mA, IB = 0	−50			V
Collector-base cutoff current (Emitter open)		ICBO	VCB = −50 V, IE = 0			− 0.1	µA
Collector-emitter cutoff current (Base open)		ICEO	VCE = −50 V, IB = 0			− 0.5	µA
Emitter-base	UNR1111	IEBO	VEB = −6 V, IC = 0			− 0.5	mA
cutoff current	UNR1112/1114/111D/111E					− 0.2

(Collector open)	UNR1113					− 0.1

	UNR1110/1115/1116/1117					− 0.01

	UNR111F/111H					−1.0

	UNR1119					−1.5

	UNR1118/111L					−2.0

Forward current	UNR1111	hFE	VCE = −10 V, IC = −5 mA	35
transfer ratio	UNR1112/111E			60

	UNR1113/1114			80

	UNR1110 /1115 /1116 */			160		460
	1117 *
	UNR1118/111L			20

	UNR1119/111D/111F/111H			30

Collector-emitter saturation voltage		VCE(sat)	IC = −10 mA, IB = − 0.3 mA			− 0.25	V
Output voltage high-level		VOH	VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ	−4.9			V
Output voltage low-level		VOL	VCC = −5 V, VB = −2.5 V, RL = 1 kΩ			− 0.2	V
	UNR1113		VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
	UNR111D		VCC = −5 V, VB = −10 V, RL = 1 kΩ

	UNR111E		VCC = −5 V, VB = −6 V, RL = 1 kΩ

Transition frequency		fT	VCB = −10 V, IE = 2 mA, f = 200 MHz		80		MHz

Input resistance	UNR1111/1114/1115	R1		−30%	10	+30%	kΩ

	UNR1112/1117				22

	UNR1110/1113/111D/111E				47

	UNR1116/111F/111L				4.7

	UNR1118				0.51

	UNR1119				1

	UNR111H				2.2

Resistance ratio	UNR1111/1112/1113/111L	R1/R2		0.8	1.0	1.2

	UNR1114			0.17	0.21	0.25

	UNR1118/1119			0.08	0.1	0.12

	UNR111D				4.7

	UNR111E				2.14

	UNR111F				0.47

	UNR111H			0.17	0.22	0.27

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification (UNR1110/1115/1116/1117)

	Rank	Q		R		S

	hFE	160 to	260	210 to 340		290 to 460

2					SJH00001BED

UNR111x Series

Common characteristics chart

			PT Ta
	500
(mW)	400
(mW)
T
P
dissipation	300
dissipation	200
power	200
power
Total	100
Total
	0
	0	40	80	120	160
		Ambient temperature Ta			(°C)

Characteristics charts of UNR1110

IC VCE VCE(sat) IC

−120

Ta = 25°C

(V)

−100

/ IB = 10

IB = −1.0 mA

CE(sat)

−100

− 0.9 mA

−

0.8 mA

(mA)

− 0.7 mA

− 0.6 mA

−10

−80

− 0.5 mA

saturationemitter-Collectorvoltage

− 0.4 mA

− 0.3 mA

currentCollectorI

−60

−1

− 0.2 mA

Ta = 75°C

−40

25°C

− 0.1 mA

− 0.1

−20

−25°C

−2

−4

−6

−8

−10

−12

− 0.01

−1

−10

−100

−0.1

Collector-emitter voltage VCE (V)

Collector current IC (mA)

Forward current transfer ratio h

hFE IC

400

VCE = –10 V

300

Ta = 75°C

200

25°

100

−25

°C

0−

−10

−100

−1 000

Collector current

IC (mA)

Collector output capacitance C (pF) (Common base, input open circuited) ob

Cob VCB

f = 1 MHz IE = 0

Ta = 25°C

0		−1	−10	−100
−	0.1

Collector-base voltage VCB (V)

IO VIN

VIN IO

−104

−100

VO = −5 V

VO = − 0.2 V

−103

Ta = 25°C

(V)

−10

Ta = 25°C

(

currentOutput

−102

voltageInput

−1

−10

− 0.1

−1

− 0.01

− 0.4

− 0.6 − 0.8 −1.0

−1.2 −1.4

− 0.1

−1

−10

−100

Input voltage VIN

(V)

Output current

IO (mA)

SJH00001BED

Panasonic UNR1110, UNR1111, UNR1112, UNR1113, UNR1114 Technical data

UNR111x Series

Characteristics charts of UNR1111

IC VCE

VCE(sat) IC

hFE IC

−160

(V)

−100

IC / IB = 10

160

Ta = 75°C

Ta = 25°C

VCE = −10 V

IB = −1.0 mA

CE(sat)

− 0.9 mA

25°C

(mA)

−120

− 0.8 mA

voltagesaturationemitter-CollectorV

−10

transfercurrentForwardratio h

120

IcurrentCollector

− 0.7 mA

−25°C

− 0.6 mA

−80

− 0.5 mA

−1

− 0.4 mA

Ta = 75°C

− 0.3 mA

25°C

−40

− 0.2 mA

− 0.1

−25°C

− 0.1 mA

−2

−4 −6 −8

−10

−12

− 0.01

−1

−10

−100

−10

−100

−1 000

− 0.1

−1

Collector-emitter voltage

VCE (V)

Collector current

IC (mA)

Collector current IC (mA)

Cob VCB

IO VIN

VIN IO

(pF)

f = 1 MHz

−104

VO = −5 V

−100

= − 0.2 V

Ta = 25°C

25°C

Outputcurrent I

Inputvoltage V

capacitanceoutputCollector inputbase,(Commonopen circuited)

−103

−10

(V)

(

−102

−1

−10

− 0.1

−1

−10

−100

−1

− 0.6

− 0.8

−1.0

−1.2

− 0.01

−1

−10

−100

− 0.1

− 0.4

−1.4

− 0.1

Collector-base voltage V

(V)

Input voltage V

(V)

Output current

IO (mA)

Characteristics charts of UNR1112

IC VCE

VCE(sat) IC

hFE IC

−160

Ta = 25°C

(V)

−100

IC / IB = 10

400

VCE = −10 V

IB = −1.0 mA

CE(sat)

− 0.9 mA

(mA)

−120

− 0.8 mA

−10

− 0.7 mA

300

voltagesaturationemitter-Collector

transfercurrentForwardratio

IcurrentCollector

− 0.6 mA

− 0.5 mA

Ta = 75°C

−80

−1

− 0.4 mA

200

25°C

− 0.3 mA

25°C

Ta = 75°C

−25°C

−40

− 0.2 mA

− 0.1

100

− 0.1 mA

−25°C

0 0

− 0.01

0−1

−2

−4 −6 −8

−10

−12

− 0.1

−1

−10

−100

−10

−100

−1 000

Collector-emitter voltage

(V)

Collector current

IC (mA)

Collector current

(mA)

SJH00001BED

UNR111x Series

Collector output capacitance C (pF) (Common base, input open circuited) ob

Cob VCB

f = 1 MHz

IE = 0

Ta = 25°C

0		−1	−10	−100
−	0.1

Collector-base voltage VCB (V)

IO VIN

Output current I (µA)

−104

−103

−102

−10

VO = −5 V Ta = 25°C

−1		− 0.6	− 0.8	−1.0	−1.2 −1.4
−	0.4

Input voltage VIN (V)

VIN IO

−100 VO = − 0.2 V Ta = 25°C

(V)	−10








IN


V
voltageInput	−1


	− 0.1








	− 0.01






		−1	−10	−100
	− 0.1	−1	−10	−100

Output current IO (mA)

Characteristics charts of UNR1113

IC VCE

−160

(V)

−100

= −1.0

Ta = 25°C

CE(sat)

− 0.8 mA

− 0.9 mA

(mA)

−120

−10

− 0.6 mA

voltage

− 0.5

currentCollector

saturationemitter

−80

− 0.4 mA

−1

− 0.3

−40

− 0.2

− 0.1

Collector

− 0.1 mA

− 0.01

−2

−4 −6 −8

−10 −12

− 0.1

Collector-emitter voltage VCE (V)

Cob VCB

(pF)

−104

f = 1 MHz

IE = 0

Ta = 25°C

circuited)

−103

A)(

capacitanceoutputCollector openinputbase,(Common

currentOutputI

−102

−10

−1

−10

−100

− 0.1

− 0.4

Collector-base voltage

VCB (V)

VCE(sat) IC

IC / IB = 10

25°C Ta = 75°C

−25°C

−1

−10

−100

Collector current IC (mA)

IO VIN

VO = −5 V

Ta = 25°C

− 0.6 − 0.8 −1.0 −1.2 −1.4

Input voltage VIN (V)

hFE IC

400

VCE = −10 V

300

Ta = 75°C

ratio

transfer

200

25°C

current

−25°C

Forward

100

0−

−10

−100

−1 000

Collector current IC (mA)

VIN IO

−100 VO = − 0.2 V Ta = 25°C

(V)	−10








IN


V
voltageInput	−1


	− 0.1








	− 0.01






	− 0.1	−1	−10	−100

Output current IO (mA)

SJH00001BED

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