Panasonic UNR2223, UNR2222, UNR2221, UNR2224 Datasheet

Transistors with built-in Resistor

UN2221/2222/2223/2224

Silicon NPN epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.

■ Resistance by Part Number

		Marking Symbol	(R1)	(R2)
●	UN2221	9A	2.2kΩ	2.2kΩ
●	UN2222	9B	4.7kΩ	4.7kΩ
●	UN2223	9C	10kΩ	10kΩ
●	UN2224	9D	2.2kΩ	10kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	50	V
Collector to emitter voltage	VCEO	50	V
Collector current	IC	500	mA
Total power dissipation	PT	200	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

■ Electrical Characteristics (Ta=25˚C)

Unit: mm

	+0.2
	2.8 –0.3
0.65±0.15	+0.25	0.65±0.15
	1.5 –0.05

–0.052.9+0.2

0.21.9±

1

1.45

+0.1

–0.05

0.950.95

3

0.4

2

+0.1

0.16 –0.06

+0.2

1.1 –0.1

0.8

0.1 to 0.3

0.1

0.4±0.2

0 to

1:Base

2:Emitter

EIAJ:SC-59

3:Collector

Mini Type Package

Internal Connection

C

R1

B

R2

E

	Parameter		Symbol	Conditions	min	typ	max	Unit
Collector cutoff current			ICBO	VCB = 50V, IE = 0			1	µA
			ICEO	VCE = 50V, IB = 0			1	µA
Emitter	UN2221						5
	UN2222		IEBO	VEB = 6V, IC = 0			2	mA
cutoff
current
	UN2223/2224						1
Collector to base voltage			VCBO	IC = 10µA, IE = 0	50			V
Collector to emitter voltage			VCEO	IC = 2mA, IB = 0	50			V
Forward	UN2221				40
current
	UN2222		hFE	VCE = 10V, IC = 100mA	50
transfer
ratio	UN2223/2224				60
Collector to emitter saturation voltage			VCE(sat)	IC = 100mA, IB = 5mA			0.25	V
Output voltage high level			VOH	VCC = 5V, VB = 0.5V, RL = 500Ω	4.9			V
Output voltage low level			VOL	VCC = 5V, VB = 3.5V, RL = 500Ω			0.2	V
Transition frequency			fT	VCB = 10V, IE = –50mA, f = 200MHz		200		MHz
Input	UN2221/2224					2.2
								kΩ
	UN2222		R1		(–30%)	4.7	(+30%)
resis-
tance
	UN2223					10
Resistance ratio			R1/R2		0.8	1.0	1.2
		UN2224				0.22

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Transistors with built-in Resistor

UN2221/2222/2223/2224

Common characteristics chart

				PT — Ta
	250
(mW)	200
T
P
dissipation	150
	100
power
Total	50
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Characteristics charts of UN2221

	IC — V	CE
	300	Ta=25˚C
	IB=1.0mA
	250
	(mA)	0.9mA
		0.8mA
	200
	C	0.7mA
	I

current	150					0.6mA
Collector						0.5mA
	100					0.3mA
						0.4mA
	50
						0.2mA
	0					0.1mA
	0	2	4	6	8	10	12

Collector to emitter voltage VCE (V)

								Cob — V						CB
	24
(pF)																	f=1MHz
																	Ta=25˚C
ob	20																IE=0
C
capacitance	16
output	12
	8
Collector
	4
	0
					1					3			10				30			100
	0.1		0.3
		Collector to base voltage															VCB				(V)

			VCE(sat) — I			C						hFE — I		C
	100						IC/IB=10			400
(V)															VCE=10V
									FE
CE(sat)	30
									h
Collector to emitter saturation voltage V	10								Forward current transfer ratio	300					Ta=75˚C
	3
	1									200
							Ta=75˚C
	0.3												25˚C
				25˚C
	0.1									100
	0.03	–25˚C										–25˚C
	0.01									0		10	30	100	300	1000
	1	3	10	30		100	300	1000		1	3
		Collector current				IC	(mA)				Collector current			IC	(mA)
			IO — V		IN							VIN — I		O
	10000						VO=5V			100					VO=0.2V
							Ta=25˚C								Ta=25˚C
	3000									30

( A)	1000								(V)	10
O	300								IN	3
I									V
currentOutput	10								voltageInput	0.1
	100									1
	30									0.3
	3									0.03
	1									0.01
	0.4		0.6	0.8	1.0	1.2	1.4			0.1		0.3	1	3	10	30	100
			Input voltage		VIN	(V)						Output current			IO	(mA)

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