Panasonic UNR1224, UNR1223, UNR1222, UNR1221 Datasheet

Transistors with built-in Resistor

UN1221/1222/1223/1224

Silicon NPN epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

■ Resistance by Part Number

		(R1)	(R2)
●	UN1221	2.2kΩ	2.2kΩ
●	UN1222	4.7kΩ	4.7kΩ
●	UN1223	10kΩ	10kΩ
●	UN1224	2.2kΩ	10kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	50	V
Collector to emitter voltage	VCEO	50	V
Collector current	IC	500	mA
Total power dissipation	PT	600	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

■ Electrical Characteristics (Ta=25˚C)

Unit: mm

6.9±0.1

2.5±0.1

	1.5		1.0
0.4	1.5 R0.9
	R0.9	0.23.5±0.1	1.0
1.0±0.1	.7		4.5±0.1
	R0	2.0±
			±4.10.2
	0.85	2.4±0.2
	0.55±0.1		0.45±0.05

			±0.05
3	2	1	1.25

2.52.5

1:Base

2:Collector

3:Emitter

M Type Mold Package

Internal Connection

C

R1

B

R2

E

	Parameter		Symbol	Conditions	min	typ	max	Unit
Collector cutoff current			ICBO	VCB = 50V, IE = 0			1	µA
			ICEO	VCE = 50V, IB = 0			1	µA
Emitter	UN1221						5
	UN1222		IEBO	VEB = 6V, IC = 0			2	mA
cutoff
current
	UN1223/1224						1
Collector to base voltage			VCBO	IC = 10µA, IE = 0	50			V
Collector to emitter voltage			VCEO	IC = 2mA, IB = 0	50			V
Forward	UN1221				40
current
	UN1222		hFE	VCE = 10V, IC = 100mA	50
transfer
	UN1223/1224				60
ratio
Collector to emitter saturation voltage			VCE(sat)	IC = 100mA, IB = 5mA			0.25	V
Output voltage high level			VOH	VCC = 5V, VB = 0.5V, RL = 500Ω	4.9			V
Output voltage low level			VOL	VCC = 5V, VB = 3.5V, RL = 500Ω			0.2	V
Transition frequency			fT	VCB = 10V, IE = –50mA, f = 200MHz		200		MHz
Input	UN1221/1224					2.2
resis-	UN1222		R1		(–30%)	4.7	(+30%)	kΩ
tance
	UN1223					10
Resistance ratio			R1/R2		0.8	1.0	1.2
		UN1224				0.22

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Transistors with built-in Resistor

UN1221/1222/1223/1224

Common characteristics chart

				PT — Ta
	800
)	700
(mW
	600
T
P
dissipation	500
	400
	300
power
	200
Total	100
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Characteristics charts of UN1221

	IC — V	CE
	300	Ta=25˚C
	IB=1.0mA
	250	0.9mA
	)
	(mA	0.8mA
	200
	C	0.7mA
	I

current
	150																					0.6mA
Collector	100																					0.5mA
																							0.3mA
																						0.4mA
	50
																						0.2mA
	0																					0.1mA
	0		2			4						6			8					10				12
			Collector to emitter voltage																	VCE				(V)
										Cob — V						CB
	24
)																				f=1MHz
(pF																				IE=0
	20																			Ta=25˚C
ob
C
capacitance	16
output	12
	8
Collector
	4
	0
						1						3			10					30				100
	0.1		0.3
		Collector to base voltage																		VCB					(V)

			VCE(sat) — I			C						hFE — I		C
	100						IC/IB=10			400
V)															VCE=10V
(									FE
CE(sat)	30
									h
Collector to emitter saturation voltage V	10								Forward current transfer ratio	300					Ta=75˚C
	3
	1									200
							Ta=75˚C
	0.3												25˚C
				25˚C
	0.1									100
	0.03	–25˚C										–25˚C
	0.01									0		10	30	100	300	1000
	1	3	10	30		100	300	1000		1	3
		Collector current				IC (mA)					Collector current			IC	(mA)
			IO — V		IN							VIN — I		O
	10000						VO=5V			100					VO=0.2V
							Ta=25˚C								Ta=25˚C
	3000									30

)	1000									10
( A									(V)
O	300								IN	3
I									V
currentOutput	10								voltageInput	0.1
	100									1
	30									0.3
	3									0.03
	1									0.01
	0.4		0.6	0.8	1.0	1.2	1.4			0.1		0.3	1	3	10	30	100
			Input voltage		VIN	(V)						Output current			IO	(mA)

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