Panasonic UN9211, UN9212, UN9213, UN9214, UN9215 Technical data

UN9210

Transistors with built-in Resistor

UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/

921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ

Silicon NPN epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●SS-Mini type package, allowing automatic insertion through tape packing and magazine packing.

■ Resistance by Part Number

	Marking Symbol		(R1)	(R2)
●	UN9211	8A	10kΩ	10kΩ
●	UN9212	8B	22kΩ	22kΩ
●	UN9213	8C	47kΩ	47kΩ
●	UN9214	8D	10kΩ	47kΩ
●	UN9215	8E	10kΩ	—
●	UN9216	8F	4.7kΩ	—
●	UN9217	8H	22kΩ	—
●	UN9218	8I	0.51kΩ	5.1kΩ
●	UN9219	8K	1kΩ	10kΩ
●	UN9210	8L	47kΩ	—
●	UN921D	8M	47kΩ	10kΩ
●	UN921E	8N	47kΩ	22kΩ
●	UN921F	8O	4.7kΩ	10kΩ
●	UN921K	8P	10kΩ	4.7kΩ
●	UN921L	8Q	4.7kΩ	4.7kΩ
●	UNR921M	EL	2.2kΩ	47kΩ
●	UNR921N	EX	4.7kΩ	47kΩ
●	UNR921AJ	8X	100kΩ	100kΩ
●	UNR921BJ	8Y	100kΩ	—
●	UNR921CJ	8Z	—	47k Ω

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	50	V
Collector to emitter voltage	VCEO	50	V
Collector current	IC	100	mA
Total power dissipation	PT	125	mW
Junction temperature	Tj	125	˚C
Storage temperature	Tstg	–55 to +125	˚C

Unit: mm

											1.6±0.15
								0.4			0.8±0.1					0.4
																			+0.1	-0.05
0.1±		0.1±			0.5
								1											0.2
1.6		1.0			0.5											3
								2
		0.150.75±														0.150.05-
				0.30.10.45±
																+0.1
											0 to 0.1			0.2±0.1

1 : Base

2 : Emitter

3 : Collector

SS–Mini Type Pakage

Unit: mm

1.60±0.05

0.80

0.80±0.05

0.425

0.425

–0.031.60

0.800.80

0.051.00±

0.500.50

±0.020.27

+0.05

+0.05

0.85–0.03

+0.03

0.12–0.01

0.70–0.03

+0.05

0 to 0.1

1 : Base

2 : Emitter

3 : Collector

SS–Mini Flat Type Pakage (J type)

Internal Connection

C

R1

B

R2

E

1

UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/

Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

ICBO

VCB = 50V, IE = 0

0.1

µA

ICEO

VCE = 50V, IB = 0

0.5

µA

UN9211

0.5

UN9212/9214/921E/921D

0.2

Emitter

UN9213/UNR921M/921N/UNR921AJ

0.1

UN9215/9216/9217/9210/UNR921BJ

IEBO

VEB = 6V, IC = 0

0.01

mA

cutoff

current

UN921F/921K

1.0

UN9219

1.5

UN9218/921L/UNR921CJ

2.0

Collector to base voltage

VCBO

IC = 10µA, IE = 0

50

V

Collector to emitter voltage

VCEO

IC = 2mA, IB = 0

50

V

UN9211

35

UN9212/921E

60

Forward

UN9213/9214/921M/UNR921AJ/921CJ

80

current

UN9215*/9216*/9217*/9210*/UNR921BJ

hFE

VCE = 10V, IC = 5mA

160

460

transfer

UN921F/921D/9219

30

ratio

UN9218/921K/921L

20

UN921N

80

400

Collector to emitter saturation voltage

VCE(sat)

IC = 10mA, IB = 0.3mA

0.25

V

Output voltage high level

VOH

VCC = 5V, VB = 0.5V, RL = 1kΩ

4.9

V

Output voltage low level

VCC = 5V, VB = 2.5V, RL = 1kΩ

0.2

UN9213/921K/UNR921BJ

VOC = 5V, VB = 3.5V, R1 = 1kΩ

0.2

UN921D

VOL

VCC = 5V, VB = 10V, R1 = 1kΩ

0.2

V

UN921E

VCC = 5V, VB = 6V, RL = 1kΩ

0.2

UNR921AJ

VCC = 5V, VB = 5V, RL = 1kΩ

0.2

Transition frequency

fT

VCB = 10V, IE = –2mA, f = 200MHz

150

MHz

UN9211/9214/9215/921K

10

UN9212/9217

22

Input

UN9213/921D/921E/9210

47

kΩ

UN9216/921F/921L/UNR921N

R1

(–30%)

4.7

(+30%)

resis-

tance

UN9218

0.51

UN9219/UNR921M

1

UNR921AJ/921BJ

100

* hFE rank classification (UN9215/9216/9217/9210)

Rank

Q

R

S

hFE

160 to 260

210 to 340

290 to 460

2

			UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
Transistors with built-in Resistor					921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
■ Electrical Characteristics (continued)					(Ta=25˚C)
	Parameter		Symbol		Conditions	min	typ	max	Unit
	UN9211/9212/9213/921L					0.8	1.0	1.2
	UN9214					0.17	0.21	0.25
	UN9218/9219					0.08	0.1	0.12
	UN921D						4.7
Resis-
	UN921E		R1/R2				2.14
tance
	UN921F						0. 47
ratio
	UN921K						2.13
	UN921M						0.047
	UN921N						0.1
	UNR921AJ						1.0
Resistance between Emitter to Base		UNR921CJ	R2			–30%	47	30%	kΩ

3

UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/

Transistors with built-in Resistor 921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ

Common characteristics chart

				PT — Ta
	150
(mW)	125
T
P	100
dissipation	75
power	50
Total	25
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Characteristics charts of UN9211

			IC — V		CE							VCE(sat) — I		C					hFE — I		C
	160									100					IC/IB=10		400
							Ta=25˚C		(V)														VCE=10V
	140		IB=1.0mA
			0.9mA						CE(sat)	30						FE
			0.8mA
																h
(mA)	120					0.7mA				10							300
							0.6mA															Ta=75˚C
							0.5mA
									Collector to emitter saturationvoltageV							Forward current transferratio
C	100						0.4mA			3
Collector current I
	80						0.3mA			1							200
	60						0.2mA			0.3			25˚C		Ta=75˚C								25˚C
	40									0.1							100						–25˚C
												–25˚C
	20						0.1mA			0.03
	0									0.01							0
	0	2	4	6	8		10	12		0.1	0.3	1	3	10	30	100	1	3	10	30		100	300	1000
	Collector to emitter voltage						VCE	(V)			Collector current			IC	(mA)			Collector current				IC	(mA)
			Cob — V CB									IO — V IN							VIN — I O
	6					f=1MHz				10000					VO=5V		100						VO=0.2V
(pF)
						IE=0									Ta=25˚C								Ta=25˚C
	5					Ta=25˚C				3000							30
ob
									( A)
C										1000						(V)	10
	4
Collector outputcapacitance																IN
									O	300							3
	3								Output current I	100						Input voltage V	1
	2									30							0.3
										10							0.1
	1
										3							0.03
	0		1	3	10		30	100		1							0.01
	0.1	0.3								0.4	0.6	0.8	1.0		1.2	1.4	0.1	0.3	1	3		10	30	100
	Collector to base voltage						VCB	(V)			Input voltage			VIN	(V)			Output current				IO	(mA)
4

UN1211/1212/1213/1214/1215/1216/1217/1218/

Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L

Characteristics charts of UN9212

			IC — V		CE						VCE(sat) — I		C						hFE — I		C
	160								100					IC/IB=10			400
						Ta=25˚C		(V)															VCE=10V
	140
								CE(sat)	30							FE
	IB=1.0mA															h
(mA)		0.9mA				0.7mA
	120	0.8mA							10								300
						0.6mA																Ta=75˚C
						0.5mA
								Collector to emitter saturationvoltageV								Forward current transferratio
C	100					0.4mA			3
Collector current I
	80								1								200
						0.3mA																	25˚C
	60								0.3
											25˚C			Ta=75˚C
	40					0.2mA			0.1								100						–25˚C
										–25˚C
	20					0.1mA			0.03
	0								0.01		1	3	10	30	100		0		10	30		100	300	1000
	0	2	4	6	8	10	12		0.1	0.3							1	3
		Collector to emitter voltage				VCE	(V)			Collector current			IC	(mA)				Collector current				IC	(mA)
			Cob — V CB								IO — V IN								VIN — I O
	6					f=1MHz			10000					VO=5V			100						VO=0.2V
(pF)
						IE=0								Ta=25˚C									Ta=25˚C
	5					Ta=25˚C			3000								30
ob
								( A)
C									1000							(V)	10
	4
Collector outputcapacitance																IN
								O	300								3
	3							Output current I	100							Input voltage V	1
	2								30								0.3
									10								0.1
	1
									3								0.03
	0		1	3	10	30	100		1								0.01
	0.1	0.3							0.4	0.6	0.8	1.0		1.2	1.4		0.1	0.3	1	3		10	30	100
	Collector to base voltage					VCB	(V)			Input voltage			VIN	(V)				Output current				IO	(mA)

	Characteristics charts of UN9213
			IC — V		CE							VCE(sat) — I		C						hFE — I		C
	160									100					IC/IB=10			400
							Ta=25˚C		(V)															VCE=10V
(mA)	140			IB=1.0mA		0.9mA			CE(sat)	30							FE	350
							0.8mA										h
	120						0.7mA		voltagesaturationemittertoCollectorV	10							transfercurrentForwardratio	300						Ta=75˚C
IcurrentCollector							0.6mA
							0.5mA																	25˚C
C	100									3								250
							0.4mA																	–25˚C
	80									1								200
							0.3mA
	60									0.3					Ta=75˚C			150
							0.2mA						25˚C
	40									0.1								100
	20						0.1mA			0.03	–25˚C							50
	0									0.01		1	3	10	30	100		0
	0	2	4	6	8		10	12		0.1	0.3							1	3	10	30	100		300	1000
		Collector to emitter voltage					VCE	(V)			Collector current			IC	(mA)				Collector current				IC	(mA)

5