Panasonic UNR112Y, UNR112X, UNR1124, UNR1123, UNR1122 Datasheet

Transistors with built-in Resistor

UN1121/1122/1123/1124/112X/112Y

Silicon PNP epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

■ Resistance by Part Number

		(R1)	(R2)
●	UN1121	2.2kΩ	2.2kΩ
●	UN1122	4.7kΩ	4.7kΩ
●	UN1123	10kΩ	10kΩ
●	UN1124	2.2kΩ	10kΩ
●	UN112X	0.27kΩ	5kΩ
●	UN112Y	3.1kΩ	4.6kΩ

Unit: mm

6.9±0.1

2.5±0.1

	1.5		1.0
0.4	1.5 R0.9
	R0.9	0.23.5±0.1	1.0
1.0±0.1	.7		4.5±0.1
	R0	2.0±
			±4.10.2
	0.85	2.4±0.2
	0.55±0.1		0.45±0.05

			±0.05
3	2	1	1.25

2.52.5

1:Base

2:Collector

3:Emitter

M Type Mold Package

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–50	V
Collector to emitter voltage	VCEO	–50	V
Collector current	IC	–500	mA
Total power dissipation	PT	600	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

Internal Connection

C

R1

B

R2

E

1

Transistors with built-in Resistor

UN1121/1122/1123/1124/112X/112Y

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

I

V

= –50V, I = 0

–1

CBO

CB

E

µA

UN112X

I

V

= –50V, I = 0

– 0.1

CBO

CB

E

Collector cutoff current

I

V

= –50V, I = 0

–1

CEO

CE

B

µA

UN112X

I

V

= –50V, I = 0

– 0.5

CEO

CE

B

Emitter

UN1121

–5

cutoff

UN1122/112X/112Y

I

V

= –6V, I = 0

–2

mA

current

EBO

EB

C

UN1123/1124

–1

Collector to base voltage

VCBO

IC = –10µA, IE = 0

–50

V

Forward

UN1121

40

UN1122/112Y

50

current

h

V = –10V, I = –100mA

transfer

UN1123/1124

FE

CE

C

60

ratio

UN112X

20

Collector to emitter saturation voltage

V

I = –100mA, I = –5mA

– 0.25

CE(sat)

C

B

UN112X

V

I = –10mA, I = – 0.3mA

– 0.25

V

CE(sat)

C

B

UN112Y

V

I = –50mA, I = –5mA

– 0.15

CE(sat)

C

B

Output voltage high level

VOH

VCC = –5V, VB = – 0.5V, RL = 500Ω

–4.9

V

Output voltage low level

VOL

VCC = –5V, VB = –3.5V, RL = 500Ω

– 0.2

V

Transition frequency

f

V

CB

= –10V, I = 50mA, f = 200MHz

200

MHz

T

E

UN1121

2.2

Input

UN1122

4.7

kΩ

UN1123

R1

(–30%)

10

(+30%)

resis-

tance

UN112X

0.27

UN112Y

3.1

Resistance ratio

0.8

1.0

1.2

UN1124

R1/R2

0.22

UN112X

0.054

UN112Y

0.67

Common characteristics chart

			PT — Ta
	800
(mW)	600
T
P
power dissipation	400
	200
Total
	0
	0	40	80	120	160
		Ambient temperature		Ta	(˚C)
2