Panasonic UNR6214, UNR6213, UNR6212, UNR6211, UNR6210 Datasheet

Transistors with built-in Resistor

UN6211/6212/6213/6214/6215/6216/6217/6218/

6219/6210/621D/621E/621F/621K/621L

Silicon NPN epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●MT-1 type package, allowing supply with the radial taping.

■ Resistance by Part Number

		(R1)	(R2)
●	UN6211	10kΩ	10kΩ
●	UN6212	22kΩ	22kΩ
●	UN6213	47kΩ	47kΩ
●	UN6214	10kΩ	47kΩ
●	UN6215	10kΩ	—
●	UN6216	4.7kΩ	—
●	UN6217	22kΩ	—
●	UN6218	0.51kΩ	5.1kΩ
●	UN6219	1kΩ	10kΩ
●	UN6210	47kΩ	—
●	UN621D	47kΩ	10kΩ
●	UN621E	47kΩ	22kΩ
●	UN621F	4.7kΩ	10kΩ
●	UN621K	10kΩ	4.7kΩ
●	UN621L	4.7kΩ	4.7kΩ

						Unit: mm
		6.9±0.1		1.05		2.5±0.1
0.15	0.7	4.0		±0.05		(1.45)
						0.8
						0.8	±0.1
							3.5
0.65 max.				1.0
				0.85			14.5±0.5
	+0.1
0.45–0.05
		2.5±0.5	2.5±0.5	+0.1	–0.05
	1	2	3	0.45
						2.5±0.1
				1 : Emitter
				2 : Collector
				3 : Base
				MT-1 Type Pakage

Internal Connection

C

R1

B

R2

E

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	50	V
Collector to emitter voltage	VCEO	50	V
Collector current	IC	100	mA
Total power dissipation	PT	400	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

1

UN6211/6212/6213/6214/6215/6216/6217/6218/

Transistors with built-in Resistor

6219/6210/621D/621E/621F/621K/621L

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

ICBO

VCB = 50V, IE = 0

0.1

µA

ICEO

VCE = 50V, IB = 0

0.5

µA

UN6211

0.5

UN6212/6214/621E/621D

0.2

Emitter

UN6213

0.1

UN6215/6216/6217/6210

IEBO

VEB = 6V, IC = 0

0.01

mA

cutoff

current

UN621F/621K

1.0

UN6219

1.5

UN6218/621L

2.0

Collector to base voltage

VCBO

IC = 10µA, IE = 0

50

V

Collector to emitter voltage

VCEO

IC = 2mA, IB = 0

50

V

UN6211

35

Forward

UN6212/621E

60

UN6213/6214

80

current

hFE

VCE = 10V, IC = 5mA

transfer

UN6215*/6216*/6217*/6210*

160

460

ratio

UN621F/621D/6219

30

UN6218/621K/621L

20

Collector to emitter saturation voltage

VCE(sat)

IC = 10mA, IB = 0.3mA

0.25

V

Output voltage high level

VOH

VCC = 5V, VB = 0.5V, RL = 1kΩ

4.9

V

Output voltage low level

VCC = 5V, VB = 2.5V, RL = 1kΩ

0.2

UN6213/621K

VOL

VOC = 5V, VB = 3.5V, R1 = 1kΩ

0.2

V

UN621D

VCC = 5V, VB = 10V, R1 = 1kΩ

0.2

UN621E

VCC = 5V, VB = 6V, RL = 1kΩ

0.2

Transition frequency

fT

VCB = 10V, IE = –2mA, f = 200MHz

150

MHz

UN6211/6214/6215/621K

10

UN6212/6217

22

Input

UN6213/621D/621E/6210

R1

(–30%)

47

(+30%)

kΩ

resis-

UN6216/621F/621L

4.7

tance

UN6218

0.51

UN6219

1

UN6211/6212/6213/621L

0.8

1.0

1.2

UN6214

0.17

0.21

0.25

Resis-

UN6218/6219

0.08

0.1

0.12

UN621D

R1/R2

3.7

4.7

5.7

tance

ratio

UN621E

1.7

2.14

2.6

UN621F

0.37

0.47

0.57

UN621K

1.7

2.13

2.6

* hFE rank classification (UN6215/6216/6217/6210)

Rank

Q

R

S

hFE

160 to 260

210 to 340

290 to 460

2

UN6211/6212/6213/6214/6215/6216/6217/6218/ Transistors with built-in Resistor 6219/6210/621D/621E/621F/621K/621L

Common characteristics chart

				PT — Ta
	500
mW)	400
(
T
P
dissipation	300
	200
power
Total	100
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Characteristics charts of UN6211

			IC — V		CE							VCE(sat) — I		C					hFE — I		C
	160									100					IC/IB=10		400
							Ta=25˚C		)														VCE=10V
			IB=1.0mA						(V
	140
			0.9mA						CE(sat)	30						FE
			0.8mA
																h
(mA)	120					0.7mA				10							300
							0.6mA															Ta=75˚C
							0.5mA
									Collector to emitter saturationvoltageV							Forward current transferratio
C	100						0.4mA			3
Collector current I
	80						0.3mA			1							200
	60						0.2mA			0.3			25˚C		Ta=75˚C								25˚C
	40									0.1							100						–25˚C
												–25˚C
	20						0.1mA			0.03
	0									0.01							0
	0	2	4	6	8		10	12		0.1	0.3	1	3	10	30	100	1	3	10	30		100	300	1000
	Collector to emitter voltage						VCE	(V)			Collector current			IC	(mA)			Collector current				IC	(mA)
			Cob — V CB									IO — V IN							VIN — I O
	6					f=1MHz				10000					VO=5V		100						VO=0.2V
)
						IE=0									Ta=25˚C								Ta=25˚C
(pF
	5					Ta=25˚C				3000							30
ob
									( A)
C										1000						(V)	10
	4
Collector outputcapacitance																IN
									O	300							3
	3								Output current I	100						Input voltage V	1
	2									30							0.3
										10							0.1
	1
										3							0.03
	0		1	3	10		30	100		1							0.01
	0.1	0.3								0.4	0.6	0.8	1.0		1.2	1.4	0.1	0.3	1	3		10	30	100
	Collector to base voltage						VCB	(V)			Input voltage			VIN	(V)			Output current				IO	(mA)
																								3

UN6211/6212/6213/6214/6215/6216/6217/6218/ Transistors with built-in Resistor 6219/6210/621D/621E/621F/621K/621L

Characteristics charts of UN6212

			IC — V		CE						VCE(sat) — I		C						hFE — I		C
	160								100					IC/IB=10			400
						Ta=25˚C		V)															VCE=10V
	140							(
								CE(sat)	30							FE
	IB=1.0mA															h
(mA)		0.9mA				0.7mA
	120	0.8mA							10								300
						0.6mA																Ta=75˚C
						0.5mA
								Collector to emitter saturationvoltageV								Forward current transferratio
C	100					0.4mA			3
Collector current I
	80								1								200
						0.3mA																	25˚C
	60								0.3
											25˚C			Ta=75˚C
	40					0.2mA			0.1								100						–25˚C
										–25˚C
	20					0.1mA			0.03
	0								0.01		1	3	10	30	100		0		10	30		100	300	1000
	0	2	4	6	8	10	12		0.1	0.3							1	3
		Collector to emitter voltage				VCE	(V)			Collector current			IC	(mA)				Collector current				IC (mA)
			Cob — V CB								IO — V IN								VIN — I O
	6					f=1MHz			10000					VO=5V			100						VO=0.2V
)
						IE=0								Ta=25˚C									Ta=25˚C
(pF
	5					Ta=25˚C			3000								30
ob
								( A)
C									1000							(V)	10
	4
Collector outputcapacitance																IN
								O	300								3
	3							Output current I	100							Input voltage V	1
	2								30								0.3
									10								0.1
	1
									3								0.03
	0		1	3	10	30	100		1								0.01
	0.1	0.3							0.4	0.6	0.8	1.0		1.2	1.4		0.1	0.3	1	3		10	30	100
	Collector to base voltage					VCB	(V)			Input voltage			VIN	(V)				Output current				IO	(mA)

	Characteristics charts of UN6213
			IC — V		CE							VCE(sat) — I		C						hFE — I		C
	160									100					IC/IB=10			400
							Ta=25˚C		V)															VCE=10V
	140			IB=1.0mA					(									350
						0.9mA			CE(sat)	30							FE
mA)																	h
							0.8mA
	120						0.7mA		voltagesaturationemittertoCollectorV	10							ratiotransfercurrentForward	300						Ta=75˚C
IcurrentCollector							0.6mA
(
C	100						0.5mA			3								250						25˚C
							0.4mA																	–25˚C
	80									1								200
							0.3mA
	60									0.3					Ta=75˚C			150
							0.2mA						25˚C
	40									0.1								100
	20						0.1mA			0.03	–25˚C							50
	0									0.01		1	3	10	30	100		0
	0	2	4	6	8		10	12		0.1	0.3							1	3	10	30	100		300	1000
		Collector to emitter voltage					VCE	(V)			Collector current			IC	(mA)				Collector current				IC	(mA)
4