Panasonic UNR2110, UNR211Z, UNR211V, UNR211T, UNR211N Datasheet

Transistors with built-in Resistor

UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/

211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Silicon PNP epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.

■ Resistance by Part Number

		Marking Symbol	(R1)	(R2)
●	UN2111	6A	10kΩ	10kΩ
●	UN2112	6B	22kΩ	22kΩ
●	UN2113	6C	47kΩ	47kΩ
●	UN2114	6D	10kΩ	47kΩ
●	UN2115	6E	10kΩ	—
●	UN2116	6F	4.7kΩ	—
●	UN2117	6H	22kΩ	—
●	UN2118	6I	0.51kΩ	5.1kΩ
●	UN2119	6K	1kΩ	10kΩ
●	UN2110	6L	47kΩ	—
●	UN211D	6M	47kΩ	10kΩ
●	UN211E	6N	47kΩ	22kΩ
●	UN211F	6O	4.7kΩ	10kΩ
●	UN211H	6P	2.2kΩ	10kΩ
●	UN211L	6Q	4.7kΩ	4.7kΩ
●	UN211M	EI	2.2kΩ	47kΩ
●	UN211N	EW	4.7kΩ	47kΩ
●	UN211T	EY	22kΩ	47kΩ
●	UN211V	FC	2.2kΩ	2.2kΩ
●	UN211Z	FE	4.7kΩ	22kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–50	V
Collector to emitter voltage	VCEO	–50	V
Collector current	IC	–100	mA
Total power dissipation	PT	200	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

Unit: mm

	+0.2
	2.8 –0.3
0.65±0.15	+0.25	0.65±0.15
	1.5 –0.05

–0.052.9+0.2

0.21.9±

1

1.45

+0.1

–0.05

0.950.95

3

0.4

2

+0.1

0.16 –0.06

+0.2

1.1 –0.1

0.8

0.1 to 0.3

0.1

0.4±0.2

0 to

1:Base

2:Emitter

EIAJ:SC-59

3:Collector

Mini Type Package

Internal Connection

C

R1

B

R2

E

1

UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/

Transistors with built-in Resistor

211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

ICBO

VCB = –50V,EI = 0

– 0.1

µA

ICEO

VCE = –50V,BI = 0

– 0.5

µA

UN2111

– 0.5

UN2112/2114/211E/211D/211M/211N/211T

– 0.2

UN2113

– 0.1

Emitter

UN2115/2116/2117/2110

– 0.01

cutoff

I

V = –6V, I = 0

mA

UN211F/211H

EBO

EB

C

–1.0

current

UN2119

–1.5

UN2118/211L/211V

–2.0

UN211Z

– 0.4

Collector to base voltage

V

I = –10mA, I = 0

–50

V

CBO

C

E

Collector to emitter voltage

V

I = –2mA, I = 0

–50

V

CEO

C

B

UN2111

35

UN2112/211E

60

UN2113/2114/211M

80

Forward

UN2115*/2116*/2117*/2110*

160

460

current

UN2119/211F/211D/211H

h

V

= –10V, I = –5mA

30

transfer

FE

CE

C

ratio

UN2118/211L

20

UN211N/211T

80

400

UN211V

6

20

UN211Z

60

200

Collector to emitter saturation voltage

I = –10mA, I = – 0.3mA

– 0.25

V

VCE(sat)

C

B

UN211V

I = –10mA, I = –1.5mA

– 0.07

– 0.25

V

C

B

Output voltage high level

VOH

VCC = –5V, VB = – 0.5V, RL = 1kΩ

–4.9

V

Output voltage low level

VCC = –5V, VB = –2.5V, RL = 1kΩ

– 0.2

UN2113

VOL

VCC = –5V, VB = –3.5V, RL = 1kΩ

– 0.2

V

UN211D

VCC = –5V, VB = –10V, RL = 1kΩ

– 0.2

UN211E

VCC = –5V, VB = –6V, RL = 1kΩ

– 0.2

Transition frequency

f

V = –10V, I = 1mA, f = 200MHz

80

MHz

T

CB

E

UN2111/2114/2115

10

UN2112/2117/211T

22

Input

UN2113/2110/211D/211E

47

resis-

UN2116/211F/211L/211N/211Z

R1

(–30%)

4.7

(+30%)

kΩ

tance

UN2118

0.51

UN2119

1

UN211H/211M/211V

2.2

* hFE rank classification (UN2115/2116/2117/2110)

Rank

Q

R

S

hFE

160 to 260

210 to 340

290 to 460

2

UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/

Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

■ Electrical Characteristics (continued)				(Ta=25˚C)
	Parameter	Symbol		Conditions	min	typ	max	Unit
	UN2111/2112/2113/211L				0.8	1.0	1.2
	UN2114				0.17	0.21	0.25
	UN2118/2119				0.08	0.1	0.12
	UN211D					4.7
Resis-	UN211E					2.14
	UN211F/211T	R1/R2				0.47
tance
ratio
	UN211H				0.17	0.22	0.27
	UN211M					0.047
	UN211N					0.1
	UN211V					1.0
	UN211Z					0.21

3

UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/

Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Common characteristics chart

				PT — Ta
	250
(mW)	200
T
P
dissipation	150
	100
power
Total	50
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Collector current IC (mA)

Collector output capacitance Cob (pF)

Characteristics charts of UN2111

IC — V

CE

VCE(sat) — I

C

hFE — I

C

–160

–100

IC/IB=10

160

Ta=25˚C

(V)

VCE=–10V

Ta=75˚C

IB=–1.0mA

–140

FE

–30

CE(sat)

–120

–0.9mA

–10

h

120

25˚C

–0.8mA

voltagesaturationemittertoCollectorV

transfercurrentForwardratio

–100

–0.7mA

–3

–25˚C

–0.6mA

–80

–0.5mA

–1

80

–0.4mA

–60

–0.3mA

–0.3

25˚C

Ta=75˚C

–40

–0.2mA

–0.1

40

–20

–0.03

–25˚C

–0.1mA

0

–0.01

0

–10

–30

–100

–300

–1000

0

–2

–4

–6

–8

–10

–12

–0.1

–0.3 –1 –3 –10

–30

–100

–1

–3

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Collector current

IC

(mA)

Cob — V CB

IO — V IN

VIN — I O

6

f=1MHz

–10000

VO=–5V

–100

VO=–0.2V

IE=0

Ta=25˚C

Ta=25˚C

5

Ta=25˚C

–3000

–30

A)(

(V)

–1000

–10

4

IN

O

–300

–3

I

V

3

Outputcurrent

–10

Inputvoltage

–0.1

–100

–1

2

–30

–0.3

1

–3

–0.03

0

–1

–0.01

–0.1

–0.3

–1

–3

–10

–30

–100

–0.4

–0.6 –0.8 –1.0

–1.2

–1.4

–0.1

–0.3 –1 –3

–10

–30

–100

Collector to base voltage

VCB

(V)

Input voltage

VIN

(V)

Output current

IO

(mA)

4

UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/

Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

	Characteristics charts of UN2112
	IC — V	CE			VCE(sat) — I	C
	–160			–100		IC/IB=10
		Ta=25˚C	(V)
	IB=–1.0mA			–30
	–140	–0.9mA	CE(sat)
(mA)		–0.8mA	V
	–120	–0.6mA		–10
		–0.7mA	voltage
I
C				–3
	–100	–0.5mA
currentCollector			saturationemittertoCollector
	–80	–0.4mA		–1
	–60	–0.3mA		–0.3	25˚C	Ta=75˚C
	–40	–0.2mA		–0.1
	–20	–0.1mA		–0.03	–25˚C

0

–0.01

0

–2

–4

–6

–8

–10 –12

–0.1 –0.3 –1 –3

–10

–30 –100

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Forward current transfer ratio hFE

hFE — I C

400

VCE=–10V

300

Ta=75˚C

200

25˚C

–25˚C

100

0 –1 –3 –10 –30 –100 –300 –1000

Collector current IC (mA)

Collector output capacitance Cob (pF)

Cob — V CB

6

f=1MHz IE=0

Ta=25˚C

5

4

3

2

1

0

–0.1 –0.3 –1 –3 –10 –30 –100

Collector to base voltage VCB (V)

IO — V

IN

VIN — I

O

–10000

–100

VO=–5V

VO=–0.2V

A)(

–3000

Ta=25˚C

–30

Ta=25˚C

–1000

(V)

–10

IN

O –300

–3

I

V

currentOutput

–10

voltageInput

–0.1

–100

–1

–30

–0.3

–3

–0.03

–1

–0.01

–0.4 –0.6 –0.8

–1.0

–1.2 –1.4

–0.1 –0.3 –1 –3

–10

–30 –100

Input voltage

VIN

(V)

Output current

IO

(mA)

	Characteristics charts of UN2113
	IC — V	CE			VCE(sat) — I	C
	–160				–100	IC/IB=10
	IB=–1.0mA		Ta=25˚C	(V)
	–140	–0.9mA		CE(sat)	–30
(mA)		–0.8mA		V
	–120		–0.7mA		–10
			–0.6mA
				voltage
I			–0.5mA
C					–3
currentCollector	–100			saturationemittertoCollector
	–80		–0.4mA		–1
	–60		–0.3mA		–0.3	Ta=75˚C
					25˚C
	–40		–0.2mA		–0.1
	–20				–25˚C
			–0.1mA		–0.03

0

–0.01

0

–2

–4

–6

–8

–10 –12

–0.1 –0.3 –1 –3

–10

–30 –100

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Forward current transfer ratio hFE

hFE — I C

400

VCE=–10V

Ta=75˚C

300

25˚C

200

–25˚C

100

0 –1 –3 –10 –30 –100 –300 –1000

Collector current IC (mA)

5

UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/

Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Collector output capacitance Cob (pF)

Cob — V CB

6

f=1MHz IE=0

Ta=25˚C

5

4

3

2

1

0

–0.1 –0.3 –1 –3 –10 –30 –100

Collector to base voltage VCB (V)

IO — V

IN

VIN — I

O

–10000

–100

VO=–5V

VO=–0.2V

A)(

–3000

Ta=25˚C

–30

Ta=25˚C

–1000

(V)

–10

O

IN

–300

–3

I

V

currentOutput

–10

voltageInput

–0.1

–100

–1

–30

–0.3

–3

–0.03

–1

–0.01

–0.4 –0.6 –0.8

–1.0

–1.2 –1.4

–0.1 –0.3 –1 –3

–10

–30 –100

Input voltage

VIN

(V)

Output current

IO

(mA)

	Characteristics charts of UN2114
	IC — V	CE			VCE(sat) — I	C
	–160			–100		IC/IB=10
		Ta=25˚C	(V)
	–140		CE(sat)	–30
	IB=–1.0mA	–0.9mA
(mA)			V
	–120	–0.8mA		–10
		–0.7mA
			voltage
I		–0.6mA
C				–3
	–100	–0.5mA
currentCollector			saturationemittertoCollector
	–80	–0.4mA		–1	–25˚C
	–60	–0.3mA		–0.3		Ta=75˚C
	–40	–0.2mA		–0.1	25˚C
	–20	–0.1mA		–0.03

0

–0.01

0

–2

–4

–6

–8

–10 –12

–0.1 –0.3 –1 –3

–10

–30 –100

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Forward current transfer ratio hFE

hFE — I C

400

VCE=–10V

300

Ta=75˚C

200

25˚C

–25˚C

100

0 –1 –3 –10 –30 –100 –300 –1000

Collector current IC (mA)

Collector output capacitance Cob (pF)

Cob — V CB

6

f=1MHz IE=0

Ta=25˚C

5

4

3

2

1

0

–0.1 –0.3 –1 –3 –10 –30 –100

Collector to base voltage VCB (V)

IO — V

IN

VIN — I

O

–10000

–1000

VO=–5V

VO=–0.2V

A)(

–3000

Ta=25˚C

–300

Ta=25˚C

–1000

(V)

–100

IN

O –300

–30

I

V

currentOutput

–10

voltageInput

–1

–100

–10

–30

–3

–3

–0.3

–1

–0.1

–0.4 –0.6 –0.8

–1.0

–1.2 –1.4

–0.1 –0.3 –1 –3

–10

–30 –100

Input voltage

VIN

(V)

Output current

IO

(mA)

6