Panasonic UNR2212, UNR2211, UNR2210, UNR221F, UNR221E Datasheet

Transistors with built-in Resistor

UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/

221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z

Silicon NPN epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.

■ Resistance by Part Number

		Marking Symbol	(R1)	(R2)
●	UN2211	8A	10kΩ	10kΩ
●	UN2212	8B	22kΩ	22kΩ
●	UN2213	8C	47kΩ	47kΩ
●	UN2214	8D	10kΩ	47kΩ
●	UN2215	8E	10kΩ	—
●	UN2216	8F	4.7kΩ	—
●	UN2217	8H	22kΩ	—
●	UN2218	8I	0.51kΩ	5.1kΩ
●	UN2219	8K	1kΩ	10kΩ
●	UN2210	8L	47kΩ	—
●	UN221D	8M	47kΩ	10kΩ
●	UN221E	8N	47kΩ	22kΩ
●	UN221F	8O	4.7kΩ	10kΩ
●	UN221K	8P	10kΩ	4.7kΩ
●	UN221L	8Q	4.7kΩ	4.7kΩ
●	UN221M	EL	2.2kΩ	47kΩ
●	UN221N	EX	4.7kΩ	47kΩ
●	UN221T	EZ	22kΩ	47kΩ
●	UN221V	FD	2.2kΩ	2.2kΩ
●	UN221Z	FF	4.7kΩ	22kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	50	V
Collector to emitter voltage	VCEO	50	V
Collector current	IC	100	mA
Total power dissipation	PT	200	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

Unit: mm

	+0.2
	2.8 –0.3
0.65±0.15	+0.25	0.65±0.15
	1.5 –0.05

–0.052.9+0.2

0.21.9±

1

1.45

+0.1

–0.05

0.950.95

3

0.4

2

+0.1

0.16 –0.06

+0.2

1.1 –0.1

0.8

0.1 to 0.3

0.1

0.4±0.2

0 to

1:Base

2:Emitter

EIAJ:SC-59

3:Collector

Mini Type Package

Internal Connection

C

R1

B

R2

E

1

UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/

Transistors with built-in Resistor

221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

ICBO

VCB = 50V, IE = 0

0.1

µA

ICEO

VCE = 50V, IB = 0

0.5

µA

UN2211

0.5

UN2212/2214/221E/221D/221M/221N/221T

0.2

UN2213

0.1

Emitter

UN2215/2216/2217/2210

0.01

cutoff

IEBO

VEB = 6V, IC = 0

mA

UN221F/221K

1.0

current

UN2219

1.5

UN2218/221L/221V

2.0

UN221Z

0.4

Collector to base voltage

VCBO

IC = 10µA, IE = 0

50

V

Collector to emitter voltage

VCEO

IC = 2mA, IB = 0

50

V

UN2211

35

UN2212/221E

60

Forward

UN2213/2214/221M

80

UN2215*/2216*/2217*/2210*

160

460

current

hFE

VCE = 10V, IC = 5mA

transfer

UN221F/221D/2219

30

ratio

UN2218/221K/221L

20

UN221N/221T

80

400

—

UN221V

60

200

Collector to emitter saturation voltage

VCE(sat)

IC = 10mA, IB = 0.3mA

0.25

V

UN221V

IC = 10mA, IB = 1.5mA

0.04

0.25

Output voltage high level

VOH

VCC = 5V, VB = 0.5V, RL = 1kΩ

4.9

V

Output voltage low level

VCC = 5V, VB = 2.5V, RL = 1kΩ

0.2

UN2213/221K

VOL

VCC = 5V, VB = 3.5V, RL = 1kΩ

0.2

V

UN221D

VCC = 5V, VB = 10V, RL = 1kΩ

0.2

UN221E

VCC = 5V, VB = 6V, RL = 1kΩ

0.2

Transition frequency

fT

VCB = 10V, IE = –2mA, f = 200MHz

150

MHz

UN2211/2214/2215/221K

10

UN2212/2217/221T

22

Input

UN2213/221D/221E/2210

47

kΩ

UN2216/221F/221L/221N/221Z

R1

(–30%)

4.7

(+30%)

resis-

tance

UN2218

0.51

UN2219

1

UN221M/221V

2.2

* hFE rank classification (UN2215/2216/2217/2210)

Rank

Q

R

S

hFE

160 to 260

210 to 340

290 to 460

2

UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/

Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z

■ Electrical Characteristics (continued)				(Ta=25˚C)
	Parameter	Symbol		Conditions	min	typ	max	Unit
	UN2211/2212/2213/221L				0.8	1.0	1.2
	UN2214				0.17	0.21	0.25
	UN2218/2219				0.08	0.1	0.12
	UN221D					4.7
Resis-	UN221E					2.14
tance	UN221F/221T	R1/R2				0.47
ratio
	UN221K					2.13
	UN221M					0.047
	UN211N					0.1
	UN211V					1.0
	UN211Z					0.21

3

UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/

Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z

Common characteristics chart

				PT — Ta
	250
(mW)	200
T
P
dissipation	150
	100
power
Total	50
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Characteristics charts of UN2211

			IC — V		CE							VCE(sat) — I		C					hFE — I		C
	160									100					IC/IB=10		400
							Ta=25˚C		(V)														VCE=10V
	140		IB=1.0mA
			0.9mA						CE(sat)	30						FE
			0.8mA
																h
(mA)	120					0.7mA				10							300
							0.6mA															Ta=75˚C
							0.5mA
									Collector to emitter saturationvoltageV							Forward current transferratio
C	100						0.4mA			3
Collector current I
	80						0.3mA			1							200
	60						0.2mA			0.3			25˚C		Ta=75˚C								25˚C
	40									0.1							100						–25˚C
												–25˚C
	20						0.1mA			0.03
	0									0.01							0
	0	2	4	6	8		10	12		0.1	0.3	1	3	10	30	100	1	3	10	30		100	300	1000
	Collector to emitter voltage						VCE	(V)			Collector current			IC	(mA)			Collector current				IC	(mA)
			Cob — V CB									IO — V IN							VIN — I O
	6					f=1MHz				10000					VO=5V		100						VO=0.2V
(pF)
						IE=0									Ta=25˚C								Ta=25˚C
	5					Ta=25˚C				3000							30
ob
									( A)
C										1000						(V)	10
	4
Collector outputcapacitance																IN
									O	300							3
	3								Output current I	100						Input voltage V	1
	2									30							0.3
										10							0.1
	1
										3							0.03
	0		1	3	10		30	100		1							0.01
	0.1	0.3								0.4	0.6	0.8	1.0		1.2	1.4	0.1	0.3	1	3		10	30	100
	Collector to base voltage						VCB	(V)			Input voltage			VIN	(V)			Output current				IO	(mA)
4

UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/

Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z

Characteristics charts of UN2212

			IC — V		CE						VCE(sat) — I		C						hFE — I		C
	160								100					IC/IB=10			400
						Ta=25˚C		(V)															VCE=10V
	140
								CE(sat)	30							FE
	IB=1.0mA															h
(mA)		0.9mA				0.7mA
	120	0.8mA							10								300
						0.6mA																Ta=75˚C
						0.5mA
								Collector to emitter saturationvoltageV								Forward current transferratio
C	100					0.4mA			3
Collector current I
	80								1								200
						0.3mA																	25˚C
	60								0.3
											25˚C			Ta=75˚C
	40					0.2mA			0.1								100						–25˚C
										–25˚C
	20					0.1mA			0.03
	0								0.01		1	3	10	30	100		0		10	30		100	300	1000
	0	2	4	6	8	10	12		0.1	0.3							1	3
		Collector to emitter voltage				VCE	(V)			Collector current			IC	(mA)				Collector current				IC	(mA)
			Cob — V CB								IO — V IN								VIN — I O
	6					f=1MHz			10000					VO=5V			100						VO=0.2V
(pF)
						IE=0								Ta=25˚C									Ta=25˚C
	5					Ta=25˚C			3000								30
ob
								( A)
C									1000							(V)	10
	4
Collector outputcapacitance																IN
								O	300								3
	3							Output current I	100							Input voltage V	1
	2								30								0.3
									10								0.1
	1
									3								0.03
	0		1	3	10	30	100		1								0.01
	0.1	0.3							0.4	0.6	0.8	1.0		1.2	1.4		0.1	0.3	1	3		10	30	100
	Collector to base voltage					VCB	(V)			Input voltage			VIN	(V)				Output current				IO	(mA)

	Characteristics charts of UN2213
			IC — V		CE							VCE(sat) — I		C						hFE — I		C
	160									100					IC/IB=10			400
							Ta=25˚C		(V)															VCE=10V
(mA)	140			IB=1.0mA		0.9mA			CE(sat)	30							FE	350
							0.8mA										h
	120						0.7mA		voltagesaturationemittertoCollectorV	10							transfercurrentForwardratio	300						Ta=75˚C
IcurrentCollector							0.6mA
							0.5mA																	25˚C
C	100									3								250
							0.4mA																	–25˚C
	80									1								200
							0.3mA
	60									0.3					Ta=75˚C			150
							0.2mA						25˚C
	40									0.1								100
	20						0.1mA			0.03	–25˚C							50
	0									0.01		1	3	10	30	100		0
	0	2	4	6	8		10	12		0.1	0.3							1	3	10	30	100		300	1000
		Collector to emitter voltage					VCE	(V)			Collector current			IC	(mA)				Collector current				IC	(mA)

5

UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/

Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z

										Cob — V						CB																		IO — V			IN
	6																											10000
(pF)																			f=1MHz																					VO=5V
																			IE=0									3000												Ta=25˚C
	5																		Ta=25˚C
ob																											A)
C																												1000
capacitanceoutputCollector	4																										(
																											IcurrentOutput
																											O	300
	3																											100
	2																											30
																												10
	1
																												3
	0																											1
							1					3			10				30			100									0.6		0.8				1.0			1.2				1.4
	0.1				0.3																							0.4
				Collector to base voltage															VCB				(V)								Input voltage							VIN		(V)
				Characteristics charts of UN2214
											IC — V				CE																		VCE(sat) — I C
	160																											100
																				Ta=25˚C							(V)														IC/IB=10

	140			IB=1.0mA		0.9mA		CE(sat)	30
(mA)
	120					0.7mA		V	10
						0.8mA		voltage
I	100					0.5mA			3
C						0.6mA
currentCollector	80					0.4mA		saturationemittertoCollector	1
	60					0.3mA			0.3
														Ta=75˚C
	40					0.2mA			0.1			25˚C
	20					0.1mA			0.03	–25˚C
	0								0.01		1	3	10	30	100
	0	2	4	6	8	10	12		0.1	0.3

Collector to emitter voltage VCE (V)

Collector current IC (mA)

								VIN — I					O
	100
																	VO=0.2V
	30																Ta=25˚C
(V)	10
IN	3
V
voltage	1
Input	0.3
	0.1
	0.03
	0.01
					1					3		10					30						100
	0.1		0.3

Output current IO (mA)

								hFE — I					C
	400
																	VCE=10V
FE	350
h
ratio	300
transfer	200
	250																	Ta=75˚C
current
																		25˚C
	150
Forward																		–	25˚C
	100
	50
	0
					10					30		100					300				1000
	1		3

Collector current IC (mA)

Collector output capacitance Cob (pF)

Cob — V CB

6

f=1MHz IE=0

Ta=25˚C

5

4

3

2

1

0

0.1	0.3	1	3	10	30	100
Collector to base voltage					VCB	(V)

					IO — V			IN															VIN — I					O
	10000															100
										VO=5V																						VO=0.2V
A)(	3000									Ta=25˚C						30																Ta=25˚C
	1000														(V)	10
															IN
O	300															3
I															V
currentOutput	10														voltageInput	0.1
	100															1
	30															0.3
	3															0.03
	1															0.01
	0.4		0.6		0.8			1.0		1.2			1.4			0.1		0.3		1					3			10				30						100
			Input voltage						VIN	(V)								Output current												IO		(mA)

6