Panasonic UNR6224, UNR6223, UNR6222, UNR6221 Datasheet

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Panasonic UNR6224, UNR6223, UNR6222, UNR6221 Datasheet

Transistors with built-in Resistor

UN6221/6222/6223/6224

Silicon NPN epitaxial planer transistor

For digital circuits

Features

Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

MT-1 type package, allowing supply with the radial taping.

Resistance by Part Number

 

 

(R1)

(R2)

UN6221

2.2kΩ

2.2kΩ

UN6222

4.7kΩ

4.7kΩ

UN6223

10kΩ

10kΩ

UN6224

2.2kΩ

10kΩ

Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

Ratings

Unit

 

 

 

 

Collector to base voltage

VCBO

50

V

Collector to emitter voltage

VCEO

50

V

Collector current

IC

500

mA

 

 

 

 

Total power dissipation

PT

600

mW

Junction temperature

Tj

150

˚C

 

 

 

 

Storage temperature

Tstg

–55 to +150

˚C

 

 

 

 

 

 

Unit: mm

 

 

6.9±0.1

1.05

2.5±0.1

 

0.15

0.7

4.0

 

±0.05

(1.45)

 

 

 

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.8

±0.1

 

 

 

 

 

 

 

3.5

0.65 max.

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

0.85

 

 

14.5±0.5

 

+0.1

 

 

 

 

 

 

0.45–0.05

 

 

 

 

 

 

 

 

2.5±0.5

2.5±0.5

+0.1

–0.05

 

 

 

 

 

 

 

 

 

1

2

3

0.45

 

 

 

 

 

 

 

 

2.5±0.1

 

 

 

 

 

1 : Emitter

 

 

 

 

 

2 : Collector

 

 

 

 

 

3 : Base

 

 

 

 

 

MT-1 Type Pakage

Internal Connection

C

R1

B

R2

E

1

Transistors with built-in Resistor

UN6221/6222/6223/6224

Electrical Characteristics

(Ta=25˚C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

Symbol

 

Conditions

min

typ

max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

 

ICBO

 

VCB = 50V, IE = 0

 

 

1

µA

 

ICEO

 

VCE = 50V, IB = 0

 

 

1

µA

 

 

 

 

 

 

 

Emitter

UN6221

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

 

 

 

UN6222

 

IEBO

 

VEB = 6V, IC = 0

 

 

2

mA

cutoff

 

 

 

 

current

 

 

 

 

 

 

 

 

 

 

 

UN6223/6224

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to base voltage

 

VCBO

 

IC = 10µA, IE = 0

50

 

 

V

Collector to emitter voltage

 

VCEO

 

IC = 2mA, IB = 0

50

 

 

V

Forward

UN6221

 

 

 

 

 

40

 

 

 

current

 

 

 

 

 

 

 

 

 

 

 

UN6222

 

hFE

 

VCE = 10V, IC = 100mA

50

 

 

 

transfer

 

 

 

 

 

UN6223/6224

 

 

 

 

 

60

 

 

 

ratio

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter saturation voltage

 

VCE(sat)

 

IC = 100mA, IB = 5mA

 

 

0.25

V

Output voltage high level

 

VOH

 

VCC = 5V, VB = 0.5V, RL = 500Ω

4.9

 

 

V

Output voltage low level

 

VOL

 

VCC = 5V, VB = 3.5V, RL = 500Ω

 

 

0.2

V

Transition frequency

 

fT

 

VCB = 10V, IE = –50mA, f = 200MHz

 

200

 

MHz

Input

UN6221/6224

 

 

 

 

 

 

2.2

 

 

 

 

 

 

 

 

 

 

 

 

kΩ

UN6222

 

R1

 

 

 

(–30%)

4.7

(+30%)

resis-

 

 

 

 

tance

UN6223

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Resistance ratio

 

R1/R2

 

 

 

0.8

1.0

1.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

UN6224

 

 

 

 

0.17

0.22

0.27

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

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