Panasonic UNR611L, UNR611H, UNR611F, UNR611E, UNR611D Datasheet

Transistors with built-in Resistor

UN6111/6112/6113/6114/6115/6116/6117/6118/

6119/6110/611D/611E/611F/611H/611L

Silicon PNP epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●MT-1 type package, allowing supply with the radial taping.

■ Resistance by Part Number

		(R1)	(R2)
●	UN6111	10kΩ	10kΩ
●	UN6112	22kΩ	22kΩ
●	UN6113	47kΩ	47kΩ
●	UN6114	10kΩ	47kΩ
●	UN6115	10kΩ	—
●	UN6116	4.7kΩ	—
●	UN6117	22kΩ	—
●	UN6118	0.51kΩ	5.1kΩ
●	UN6119	1kΩ	10kΩ
●	UN6110	47kΩ	—
●	UN611D	47kΩ	10kΩ
●	UN611E	47kΩ	22kΩ
●	UN611F	4.7kΩ	10kΩ
●	UN611H	2.2kΩ	10kΩ
●	UN611L	4.7kΩ	4.7kΩ

						Unit: mm
		6.9±0.1		1.05		2.5±0.1
0.15	0.7	4.0		±0.05		(1.45)
						0.8
						0.8	±0.1
							3.5
0.65 max.				1.0
				0.85			14.5±0.5
	+0.1
0.45–0.05
		2.5±0.5	2.5±0.5	+0.1	–0.05
	1	2	3	0.45
						2.5±0.1
				1 : Emitter
				2 : Collector
				3 : Base
				MT-1 Type Package

Internal Connection

C

R1

B

R2

E

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–50	V
Collector to emitter voltage	VCEO	–50	V
Collector current	IC	–100	mA
Total power dissipation	PT	400	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

1

UN6111/6112/6113/6114/6115/6116/6117/

Transistors with built-in Resistor

6118/6119/6110/611D/611E/611F/611H/611L

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

ICBO

VCB = –50V,EI = 0

– 0.1

µA

ICEO

VCE = –50V,BI = 0

– 0.5

µA

UN6111

– 0.5

UN6112/6114/611E/611D

– 0.2

Emitter

UN6113

– 0.1

UN6115/6116/6117/6110

I

V = –6V, I = 0

– 0.01

mA

cutoff

EBO

EB

C

current

UN611F/611H

–1.0

UN6119

–1.5

UN6118/611L

–2.0

Collector to base voltage

VCBO

IC = –10µA, IE = 0

–50

V

Collector to emitter voltage

V

I = –2mA, I = 0

–50

V

CEO

C

B

UN6111

35

Forward

UN6112/611E

60

UN6113/6114

80

current

h

V = –10V, I = –5mA

transfer

UN6115*/6116*/6117*/6110*

FE

CE

C

160

460

ratio

UN611F/611D/6119/611H

30

UN6118/611L

20

Collector to emitter saturation voltage

V

I = –10mA, I = – 0.3mA

– 0.25

V

CE(sat)

C

B

Output voltage high level

VOH

VCC = –5V, VB = – 0.5V, RL = 1kΩ

–4.9

V

Output voltage low level

VCC = –5V, VB = –2.5V, RL = 1kΩ

– 0.2

UN6113

VOL

VCC = –5V, VB = –3.5V, RL = 1kΩ

– 0.2

V

UN611D

VCC = –5V, VB = –10V, RL = 1kΩ

– 0.2

UN611E

VCC = –5V, VB = –6V, RL = 1kΩ

– 0.2

Transition frequency

f

V = –10V, I = 1mA, f = 200MHz

80

MHz

T

CB

E

UN6111/6114/6115

10

UN6112/6117

22

Input

UN6113/6110/611D/611E

47

resis-

UN6116/611F/611L

R1

(–30%)

4.7

(+30%)

kΩ

tance

UN6118

0.51

UN6119

1

UN611H

2.2

UN6111/6112/6113/611L

0.8

1.0

1.2

UN6114

0.17

0.21

0.25

Resis-

UN6118/6119

0.08

0.1

0.12

UN611D

R1/R2

3.7

4.7

5.7

tance

ratio

UN611E

1.7

2.14

2.6

UN611F

0.37

0.47

0.57

UN611H

0.17

0.22

0.27

* hFE rank classification (UN6115/6116/6117/6110)

Rank

Q

R

S

hFE

160 to 260

210 to 340

290 to 460

2

UN6111/6112/6113/6114/6115/6116/6117/ Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L

Common characteristics chart

				PT — Ta
	500
mW)	400
(
T
P
dissipation	300
	200
power
Total	100
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Characteristics charts of UN6111

IC — V

CE

–160

Ta=25˚C

–140

IB=–1.0mA

)

–0.9mA

(mA

–120

–

0.8mA

C

–100

–0.7mA

I

current

–0.6mA

–0.4mA

Collector

–80

–0.5mA

–60

–

0.2mA

–

0.3mA

–40

–20

–

0.1mA

0

0

–2

–4

–6

–8

–10

–12

Collector to emitter voltage

VCE (V)

Cob — V

CB

6

)

f=1MHz

(pF

IE=0

5

Ta=25˚C

ob

C

capacitance

4

output

3

2

Collector

1

0

–1

–3

–10

–30

–100

–0.1

–0.3

Collector to base voltage

VCB

(V)

	VCE(sat) — I	C		hFE — I	C
	–100		IC/IB=10	160
)				VCE=–10V	Ta=75˚C
V
(			FE
CE(sat)	–30
			h		25˚C
voltagesaturationemittertoCollectorV	–10		transfercurrentForwardratio	120
	–3				–25˚C
	–1			80
	–0.3		Ta=75˚C
	25˚C
	–0.1			40
	–25˚C
	–0.03

–0.01

0

–10

–30

–100

–300

–1000

–0.1

–0.3 –1 –3

–10

–30

–100

–1

–3

Collector current

IC

(mA)

Collector current

IC

(mA)

IO — V

IN

VIN — I

O

–10000

VO=–5V

–100

VO=–0.2V

Ta=25˚C

Ta=25˚C

–3000

–30

)

–1000

–10

( A

(V)

O

–300

IN

–3

I

V

Output current

–100

Input voltage

–1

–30

–0.3

–10

–0.1

–3

–0.03

–1

–0.01

–0.4 –0.6

–0.8

–1.0

–1.2

–1.4

–0.1

–0.3 –1 –3

–10

–30

–100

Input voltage

VIN

(V)

Output current

IO

(mA)

3

UN6111/6112/6113/6114/6115/6116/6117/ Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L

	Characteristics charts of UN6112
	IC — V	CE			VCE(sat) — I	C
	–160			–100		IC/IB=10
		Ta=25˚C	V)
	IB=–1.0mA		(
)	–140	–0.9mA	CE(sat)	–30
mA(		–0.8mA	V
	–120	–0.6mA		–10
		–0.7mA	voltage
I
C				–3
	–100	–0.5mA
currentCollector			saturationemittertoCollector
	–80	–0.4mA		–1
	–60	–0.3mA		–0.3	25˚C	Ta=75˚C
	–40	–0.2mA		–0.1
	–20	–0.1mA		–0.03	–25˚C

0							–0.01
0		–2	–4	–6	–8 –10 –12		–0.1 –0.3 –1 –3 –10 –30 –100

Forward current transfer ratio hFE

hFE — I C

400

VCE=–10V

300

Ta=75˚C

200

25˚C

–25˚C

100

0 –1 –3 –10 –30 –100 –300 –1000

Collector to emitter voltage VCE (V)

Collector current IC (mA)

Collector current IC (mA)

Collector output capacitance Cob (pF)

Cob — V CB

6

f=1MHz IE=0

Ta=25˚C

5

4

3

2

1

0

–0.1 –0.3 –1 –3 –10 –30 –100

Collector to base voltage VCB (V)

IO — V

IN

VIN — I

O

–10000

–100

VO=–5V

VO=–0.2V

A()

–3000

Ta=25˚C

–30

Ta=25˚C

–1000

V)(

–10

IN

O –300

–3

I

V

currentOutput

–10

voltageInput

–0.1

–100

–1

–30

–0.3

–3

–0.03

–1

–0.01

–0.4 –0.6 –0.8

–1.0

–1.2 –1.4

–0.1 –0.3 –1 –3

–10

–30 –100

Input voltage

VIN

(V)

Output current

IO

(mA)

	Characteristics charts of UN6113
	IC — V	CE			VCE(sat) — I	C
	–160				–100	IC/IB=10
	IB=–1.0mA		Ta=25˚C	V)
	–140			(
)		–0.9mA		CE(sat)	–30
mA		–0.8mA
	–120		–0.7mA	V	–10
			–0.6mA
I				voltage
(			–0.5mA
C					–3
currentCollector	–100			saturationemittertoCollector
	–80		–0.4mA		–1
	–60		–0.3mA		–0.3	Ta=75˚C
					25˚C
	–40		–0.2mA		–0.1
	–20				–25˚C
			–0.1mA		–0.03

0

–0.01

0

–2

–4

–6

–8

–10 –12

–0.1 –0.3 –1 –3

–10

–30 –100

Collector to emitter voltage

VCE (V)

Collector current

IC

(mA)

Forward current transfer ratio hFE

hFE — I C

400

VCE=–10V

Ta=75˚C

300

25˚C

200

–25˚C

100

0 –1 –3 –10 –30 –100 –300 –1000

Collector current IC (mA)

4