Panasonic UNR421L, UNR421K, UNR421F, UNR421E, UNR421D Datasheet

Transistors with built-in Resistor

UN4211/4212/4213/4214/4215/4216/4217/4218/

4219/4210/421D/421E/421F/421K/421L

Silicon NPN epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●New S type package, allowing supply with the radial taping.

■ Resistance by Part Number

		(R1)	(R2)
●	UN4211	10kΩ	10kΩ
●	UN4212	22kΩ	22kΩ
●	UN4213	47kΩ	47kΩ
●	UN4214	10kΩ	47kΩ
●	UN4215	10kΩ	—
●	UN4216	4.7kΩ	—
●	UN4217	22kΩ	—
●	UN4218	0.51kΩ	5.1kΩ
●	UN4219	1kΩ	10kΩ
●	UN4210	47kΩ	—
●	UN421D	47kΩ	10kΩ
●	UN421E	47kΩ	22kΩ
●	UN421F	4.7kΩ	10kΩ
●	UN421K	10kΩ	4.7kΩ
●	UN421L	4.7kΩ	4.7kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	50	V
Collector to emitter voltage	VCEO	50	V
Collector current	IC	100	mA
Total power dissipation	PT	300	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

Unit: mm

4.0±0.2
		3.0±0.2
		15.6±0.5
1 2 3	+0.2 0.45–0.1	0.7±0.1	0.22.0±
marking

1.27 1.27

2.54±0.15

1 : Emitter

2 : Collector

3 : Base

New S Type Package

Internal Connection

C

R1

B

R2

E

1

UN4211/4212/4213/4214/4215/4216/4217/

Transistors with built-in Resistor

4218/4219/4210/421D/421E/421F/421K/421L

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

ICBO

VCB = 50V, IE = 0

0.1

µA

ICEO

VCE = 50V, IB = 0

0.5

µA

UN4211

0.5

UN4212/4214/421E/421D

0.2

UN4213

0.1

Emitter

UN4215/4216/4217/4210

IEBO

VEB = 6V, IC = 0

0.01

mA

cutoff

UN421F/421K

1.0

current

UN4219

1.5

UN4218/421L

2.0

Collector to base voltage

VCBO

IC = 10µA, IE = 0

50

V

Collector to emitter voltage

VCEO

IC = 2mA, IB = 0

50

V

UN4211

35

Forward

UN4212/421E

60

UN4213/4214

80

current

hFE

VCE = 10V, IC = 5mA

transfer

UN4215*/4216*/4217*/4210*

160

460

ratio

UN421F/421D/4219

30

UN4218/421K/421L

20

Collector to emitter saturation voltage

VCE(sat)

IC = 10mA, IB = 0.3mA

0.25

V

Output voltage high level

VOH

VCC = 5V, VB = 0.5V, RL = 1kΩ

4.9

V

Output voltage low level

VCC = 5V, VB = 2.5V, RL = 1kΩ

0.2

UN4213/421K

VOL

VCC = 5V, VB = 3.5V, RL = 1kΩ

0.2

V

UN421D

VCC = 5V, VB = 10V, RL = 1kΩ

0.2

UN421E

VCC = 5V, VB = 6V, RL = 1kΩ

0.2

Transition frequency

fT

VCB = 10V, IE = –2mA, f = 200MHz

150

MHz

UN4211/4214/4215/421K

10

UN4212/4217

22

Input

UN4213/421D/421E/4210

R1

(–30%)

47

(+30%)

kΩ

resis-

UN4216/421F/421L

4.7

tance

UN4218

0.51

UN4219

1

UN4211/4212/4213/421L

0.8

1.0

1.2

UN4214

0.17

0.21

0.25

Resis-

UN4218/4219

0.08

0.1

0.12

UN421D

R1/R2

3.7

4.7

5.7

tance

ratio

UN421E

1.7

2.14

2.6

UN421F

0.37

0.47

0.57

UN421K

1.7

2.13

2.6

* hFE rank classification (UN4215/4216/4217/4210)

Rank

Q

R

S

hFE

160 to 260

210 to 340

290 to 460

2

UN4211/4212/4213/4214/4215/4216/4217/

Transistors with built-in Resistor 4218/4219/4210/421D/421E/421F/421K/421L

Common characteristics chart

				PT — Ta
	400
(mW)	350
	300
T
P
dissipation	250
	200
	150
power
	100
Total	50
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Characteristics charts of UN4211

			IC — V		CE							VCE(sat) — I		C					hFE — I		C
	160									100					IC/IB=10		400
							Ta=25˚C		(V)														VCE=10V
	140		IB=1.0mA
			0.9mA						CE(sat)	30						FE
			0.8mA
																h
(mA)	120					0.7mA				10							300
							0.6mA															Ta=75˚C
							0.5mA
									Collector to emitter saturationvoltageV							Forward current transferratio
C	100						0.4mA			3
Collector current I
	80						0.3mA			1							200
	60						0.2mA			0.3			25˚C		Ta=75˚C								25˚C
	40									0.1							100						–25˚C
												–25˚C
	20						0.1mA			0.03
	0									0.01							0
	0	2	4	6	8		10	12		0.1	0.3	1	3	10	30	100	1	3	10	30		100	300	1000
	Collector to emitter voltage						VCE	(V)			Collector current			IC	(mA)			Collector current				IC	(mA)
			Cob — V CB									IO — V IN							VIN — I O
	6					f=1MHz				10000					VO=5V		100						VO=0.2V
(pF)
						IE=0									Ta=25˚C								Ta=25˚C
	5					Ta=25˚C				3000							30
ob
									( A)
C										1000						(V)	10
	4
Collector outputcapacitance																IN
									O	300							3
	3								Output current I	100						Input voltage V	1
	2									30							0.3
										10							0.1
	1
										3							0.03
	0		1	3	10		30	100		1							0.01
	0.1	0.3								0.4	0.6	0.8	1.0		1.2	1.4	0.1	0.3	1	3		10	30	100
	Collector to base voltage						VCB	(V)			Input voltage			VIN	(V)			Output current				IO	(mA)
																								3

UN4211/4212/4213/4214/4215/4216/4217/

Transistors with built-in Resistor 4218/4219/4210/421D/421E/421F/421K/421L

Characteristics charts of UN4212

			IC — V		CE						VCE(sat) — I		C						hFE — I		C
	160								100					IC/IB=10			400
						Ta=25˚C		(V)															VCE=10V
	140
								CE(sat)	30							FE
	IB=1.0mA															h
(mA)		0.9mA				0.7mA
	120	0.8mA							10								300
						0.6mA																Ta=75˚C
						0.5mA
								Collector to emitter saturationvoltageV								Forward current transferratio
C	100					0.4mA			3
Collector current I
	80								1								200
						0.3mA																	25˚C
	60								0.3
											25˚C			Ta=75˚C
	40					0.2mA			0.1								100						–25˚C
										–25˚C
	20					0.1mA			0.03
	0								0.01		1	3	10	30	100		0		10	30		100	300	1000
	0	2	4	6	8	10	12		0.1	0.3							1	3
		Collector to emitter voltage				VCE	(V)			Collector current			IC	(mA)				Collector current				IC	(mA)
			Cob — V CB								IO — V IN								VIN — I O
	6					f=1MHz			10000					VO=5V			100						VO=0.2V
(pF)
						IE=0								Ta=25˚C									Ta=25˚C
	5					Ta=25˚C			3000								30
ob
								( A)
C									1000							(V)	10
	4
Collector outputcapacitance																IN
								O	300								3
	3							Output current I	100							Input voltage V	1
	2								30								0.3
									10								0.1
	1
									3								0.03
	0		1	3	10	30	100		1								0.01
	0.1	0.3							0.4	0.6	0.8	1.0		1.2	1.4		0.1	0.3	1	3		10	30	100
	Collector to base voltage					VCB	(V)			Input voltage			VIN	(V)				Output current				IO	(mA)

	Characteristics charts of UN4213
			IC — V		CE							VCE(sat) — I		C						hFE — I		C
	160									100					IC/IB=10			400
							Ta=25˚C		(V)															VCE=10V
(mA)	140			IB=1.0mA		0.9mA			CE(sat)	30							FE	350
							0.8mA										h
	120						0.7mA		voltagesaturationemittertoCollectorV	10							transfercurrentForwardratio	300						Ta=75˚C
IcurrentCollector							0.6mA
							0.5mA																	25˚C
C	100									3								250
							0.4mA																	–25˚C
	80									1								200
							0.3mA
	60									0.3					Ta=75˚C			150
							0.2mA						25˚C
	40									0.1								100
	20						0.1mA			0.03	–25˚C							50
	0									0.01		1	3	10	30	100		0
	0	2	4	6	8		10	12		0.1	0.3							1	3	10	30	100		300	1000
		Collector to emitter voltage					VCE	(V)			Collector current			IC	(mA)				Collector current				IC	(mA)
4