Panasonic UNR6122, UNR6121, UNR612Y, UNR612X, UNR6124 Datasheet

Transistors with built-in Resistor

UN6121/6122/6123/6124/612X/612Y

Silicon PNP epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●MT-1 type package, allowing supply with the radial taping.

■ Resistance by Part Number

		(R1)	(R2)
●	UN6121	2.2kΩ	2.2kΩ
●	UN6122	4.7KΩ	4.7kΩ
●	UN6123	10kΩ	10kΩ
●	UN6124	2.2kΩ	10kΩ
●	UN612X	0.27kΩ	5kΩ
●	UN612Y	3.1kΩ	4.6kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–50	V
Collector to emitter voltage	VCEO	–50	V
Collector current	IC	–500	mA
Total power dissipation	PT	600	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

						Unit: mm
		6.9±0.1		1.05		2.5±0.1
0.15	0.7	4.0		±0.05		(1.45)
						0.8
						0.8	±0.1
							3.5
0.65 max.				1.0
				0.85			14.5±0.5
	+0.1
0.45–0.05
		2.5±0.5	2.5±0.5	+0.1	–0.05
	1	2	3	0.45
						2.5±0.1
				1 : Emitter
				2 : Collector
				3 : Base
				MT-1 Type Pakage

Internal Connection

C

R1

B

R2

E

1

Transistors with built-in Resistor

UN6121/6122/6123/6124/612X/612Y

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

I

CBO

V

= –50V, I = 0

–1

CB

E

µA

UN612X

I

CBO

V

= –50V, I = 0

– 0.1

CB

E

Collector cutoff current

I

CEO

V = –50V, I = 0

–1

CE

B

µA

UN612X

I

CEO

V = –50V, I = 0

– 0.5

CE

B

Emitter

UN6121

–5

cutoff

UN6122/612X/612Y

I

EBO

V = –6V, I = 0

–2

mA

EE

C

current

UN6123/6124

–1

Collector to base voltage

VCBO

IC = –10µA, IE = 0

–50

V

Collector to emitter voltage

V

CEO

I = –2mA, I = 0

–50

V

C

B

Forward

UN6121

40

UN6122/612Y

50

current

h

V = –10V, I = –100mA

FE

transfer

UN6123/6124

CE

C

60

ratio

UN612X

20

Collector to emitter saturation voltage

V

CE(sat)

I = –100mA, I = –5mA

– 0.25

C

B

UN612X

V

CE(sat)

I = –10mA, I = – 0.3mA

– 0.25

V

C

B

UN612Y

V

CE(sat)

I = –50mA, I = –5mA

– 0.15

C

B

Output voltage high level

VOH

VCC = –5V, VB = – 0.5V, RL = 500Ω

–4.9

V

Output voltage low level

VOL

VCC = –5V, VB = –3.5V, RL = 500Ω

– 0.2

V

Transition frequency

f

T

V

= –10V, I = 50mA, f = 200MHz

80

MHz

CB

E

UN6121

2.2

Input

UN6122

4.7

resis-

UN6123

R1

(–30%)

10

(+30%)

kΩ

tance

UN612X

0.27

UN612Y

3.1

Resistance ratio

0.8

1.0

1.2

UN6124

R1/R2

0.17

0.22

0.27

UN612X

0.043

0.054

0.065

UN612Y

0.67

Common characteristics chart

				PT — Ta
	800
)	700
(mW
	600
T
P
dissipation	500
	400
	300
power
	200
Total	100
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)
2