Panasonic UN1211, UN1212, UN1213, UN1214, UN1215 Technical data

UN1210

Transistors with built-in Resistor

UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/

121D/121E/121F/121K/121L

Silicon NPN epitaxial planer transistor

For digital circuits

■ Features

●Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

■ Resistance by Part Number

		(R1)	(R2)
●	UN1211	10kΩ	10kΩ
●	UN1212	22kΩ	22kΩ
●	UN1213	47kΩ	47kΩ
●	UN1214	10kΩ	47kΩ
●	UN1215	10kΩ	—
●	UN1216	4.7kΩ	—
●	UN1217	22kΩ	—
●	UN1218	0.51kΩ	5.1kΩ
●	UN1219	1kΩ	10kΩ
●	UN1210	47kΩ	—
●	UN121D	47kΩ	10kΩ
●	UN121E	47kΩ	22kΩ
●	UN121F	4.7kΩ	10kΩ
●	UN121K	10kΩ	4.7kΩ
●	UN121L	4.7kΩ	4.7kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	50	V
Collector to emitter voltage	VCEO	50	V
Collector current	IC	100	mA
Total power dissipation	PT	400	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 to +150	˚C

Unit: mm

6.9±0.1

2.5±0.1

	1.5		1.0
0.4	1.5 R0.9
	R0.9	0.23.5±0.1	1.0
1.0±0.1	.7		4.5±0.1
	R0	2.0±
			±4.10.2
	0.85	2.4±0.2
	0.55±0.1		0.45±0.05

			±0.05
3	2	1	1.25

2.52.5

1:Base

2:Collector

3:Emitter

M Type Mold Package

Internal Connection

C

R1

B

R2

E

1

UN1211/1212/1213/1214/1215/1216/1217/1218/

Transistors with built-in Resistor

1219/1210/121D/121E/121F/121K/121L

■ Electrical Characteristics

(Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

ICBO

VCB = 50V, IE = 0

0.1

µA

ICEO

VCE = 50V, IB = 0

0.5

µA

UN1211

0.5

UN1212/1214/121E/121D

0.2

Emitter

UN1213

0.1

cutoff

UN1215/1216/1217/1210

IEBO

VEB = 6V, IC = 0

0.01

mA

current

UN121F/121K

1.0

UN1219

1.5

UN1218/121L

2.0

Collector to base voltage

VCBO

IC = 10µA, IE = 0

50

V

Collector to emitter voltage

VCEO

IC = 2mA, IB = 0

50

V

UN1211

35

Forward

UN1212/121E

60

UN1213/1214

80

current

hFE

VCE = 10V, IC = 5mA

transfer

UN1215*/1216*/1217*/1210*

160

460

ratio

UN121F/121D/1219

30

UN1218/121K/121L

20

Collector to emitter saturation voltage

VCE(sat)

IC = 10mA, IB = 0.3mA

0.25

V

Output voltage high level

VOH

VCC = 5V, VB = 0.5V, RL = 1kΩ

4.9

V

Output voltage low level

VCC = 5V, VB = 2.5V, RL = 1kΩ

0.2

UN1213/121K

VOL

VCC = 5V, VB = 3.5V, RL = 1kΩ

0.2

V

UN121D

VCC = 5V, VB = 10V, RL = 1kΩ

0.2

UN121E

VCC = 5V, VB = 6V, RL = 1kΩ

0.2

Transition frequency

fT

VCB = 10V, IE = –2mA, f = 200MHz

80

MHz

UN1211/1214/1215/121K

10

UN1212/1217

22

Input

UN1213/121D/121E/1210

R1

(–30%)

47

(+30%)

kΩ

resis-

UN1216/121F/121L

4.7

tance

UN1218

0.51

UN1219

1

UN1211/1212/1213/121L

0.8

1.0

1.2

UN1214

0.17

0.21

0.25

Resis-

UN1218/1219

0.08

0.1

0.12

UN121D

R1/R2

4.7

tance

ratio

UN121E

2.14

UN121F

0.47

UN121K

2.13

* hFE rank classification (UN1215/1216/1217/1210)

Rank

Q

R

S

hFE

160 to 260

210 to 340

290 to 460

2

UN1211/1212/1213/1214/1215/1216/1217/1218/

Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L

Common characteristics chart

				PT — Ta
	500
(mW)	400
T
P
dissipation	300
	200
power
Total	100
	0
	0	20	40	60	80	100	120	140	160
		Ambient temperature					Ta	(˚C)

Characteristics charts of UN1211

			IC — V		CE							VCE(sat) — I		C					hFE — I		C
	160									100					IC/IB=10		400
							Ta=25˚C		(V)														VCE=10V
	140		IB=1.0mA
			0.9mA						CE(sat)	30						FE
			0.8mA
																h
(mA)	120					0.7mA				10							300
							0.6mA															Ta=75˚C
							0.5mA
									Collector to emitter saturationvoltageV							Forward current transferratio
C	100						0.4mA			3
Collector current I
	80						0.3mA			1							200
	60						0.2mA			0.3			25˚C		Ta=75˚C								25˚C
	40									0.1							100						–25˚C
												–25˚C
	20						0.1mA			0.03
	0									0.01							0
	0	2	4	6	8		10	12		0.1	0.3	1	3	10	30	100	1	3	10	30		100	300	1000
	Collector to emitter voltage						VCE	(V)			Collector current			IC	(mA)			Collector current				IC	(mA)
			Cob — V CB									IO — V IN							VIN — I O
	6					f=1MHz				10000					VO=5V		100						VO=0.2V
(pF)
						IE=0									Ta=25˚C								Ta=25˚C
	5					Ta=25˚C				3000							30
ob
									( A)
C										1000						(V)	10
	4
Collector outputcapacitance																IN
									O	300							3
	3								Output current I	100						Input voltage V	1
	2									30							0.3
										10							0.1
	1
										3							0.03
	0		1	3	10		30	100		1							0.01
	0.1	0.3								0.4	0.6	0.8	1.0		1.2	1.4	0.1	0.3	1	3		10	30	100
	Collector to base voltage						VCB	(V)			Input voltage			VIN	(V)			Output current				IO	(mA)
																								3

UN1211/1212/1213/1214/1215/1216/1217/1218/

Transistors with built-in Resistor 1219/1210/121D/121E/121F/121K/121L

Characteristics charts of UN1212

			IC — V		CE						VCE(sat) — I		C						hFE — I		C
	160								100					IC/IB=10			400
						Ta=25˚C		(V)															VCE=10V
	140
								CE(sat)	30							FE
	IB=1.0mA															h
(mA)		0.9mA				0.7mA
	120	0.8mA							10								300
						0.6mA																Ta=75˚C
						0.5mA
								Collector to emitter saturationvoltageV								Forward current transferratio
C	100					0.4mA			3
Collector current I
	80								1								200
						0.3mA																	25˚C
	60								0.3
											25˚C			Ta=75˚C
	40					0.2mA			0.1								100						–25˚C
										–25˚C
	20					0.1mA			0.03
	0								0.01		1	3	10	30	100		0		10	30		100	300	1000
	0	2	4	6	8	10	12		0.1	0.3							1	3
		Collector to emitter voltage				VCE	(V)			Collector current			IC	(mA)				Collector current				IC	(mA)
			Cob — V CB								IO — V IN								VIN — I O
	6					f=1MHz			10000					VO=5V			100						VO=0.2V
(pF)
						IE=0								Ta=25˚C									Ta=25˚C
	5					Ta=25˚C			3000								30
ob
								( A)
C									1000							(V)	10
	4
Collector outputcapacitance																IN
								O	300								3
	3							Output current I	100							Input voltage V	1
	2								30								0.3
									10								0.1
	1
									3								0.03
	0		1	3	10	30	100		1								0.01
	0.1	0.3							0.4	0.6	0.8	1.0		1.2	1.4		0.1	0.3	1	3		10	30	100
	Collector to base voltage					VCB	(V)			Input voltage			VIN	(V)				Output current				IO	(mA)

	Characteristics charts of UN1213
			IC — V		CE							VCE(sat) — I		C						hFE — I		C
	160									100					IC/IB=10			400
							Ta=25˚C		(V)															VCE=10V
(mA)	140			IB=1.0mA		0.9mA			CE(sat)	30							FE	350
							0.8mA										h
	120						0.7mA		voltagesaturationemittertoCollectorV	10							transfercurrentForwardratio	300						Ta=75˚C
IcurrentCollector							0.6mA
							0.5mA																	25˚C
C	100									3								250
							0.4mA																	–25˚C
	80									1								200
							0.3mA
	60									0.3					Ta=75˚C			150
							0.2mA						25˚C
	40									0.1								100
	20						0.1mA			0.03	–25˚C							50
	0									0.01		1	3	10	30	100		0
	0	2	4	6	8		10	12		0.1	0.3							1	3	10	30	100		300	1000
		Collector to emitter voltage					VCE	(V)			Collector current			IC	(mA)				Collector current				IC	(mA)
4